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1. 发明申请

US20090273990A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20090273990A1
公开(公告)日：2009-11-05
申请号：US12323687
申请日：2008-11-26
申请人： Bo-Kyeom KIM , Sang-Sic YOON
发明人： Bo-Kyeom KIM , Sang-Sic YOON
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C7/1078 , G11C7/1039 , G11C7/1084 , G11C7/1096 , G11C8/06 , G11C8/12 , G11C11/408 , G11C11/4093 , G11C11/4096
摘要： There is provided a semiconductor memory device, including: a plurality of bank groups each comprising a plurality of banks; a plurality of data pads grouped by a predetermined number for receiving data for the bank groups, wherein the data pads are divided into a plurality of first pad groups receiving data and a plurality of second pad groups selectively receiving data according to a data input/output option value; a first driving unit configured to drive data input via the first pad group to transfer the data input via the first pad group to the bank group corresponding to the first pad group; a second driving unit configured to drive data input via the second pad group to transfer the data input via the second pad group to the bank group corresponding to the second pad group; and a third driving unit configured to drive data input via the first pad group to transfer the data input via the first pad group to the bank group corresponding to the second pad group in response to the data input/output option value.
摘要翻译：提供了一种半导体存储器件，包括：多个银行组，每个组包括多个存储体; 多个用于接收银行组的数据的预定数量的数据焊盘，其中数据焊盘被分成多个接收数据的第一焊盘组和根据数据输入/输出有选择地接收数据的多个第二焊盘组期权价值第一驱动单元，被配置为驱动经由所述第一焊盘组输入的数据，以将经由所述第一焊盘组输入的数据传送到对应于所述第一焊盘组的所述存储体组; 第二驱动单元，被配置为驱动经由所述第二焊盘组输入的数据，以将经由所述第二焊盘组输入的数据传送到对应于所述第二焊盘组的所述存储体组; 以及第三驱动单元，被配置为响应于所述数据输入/输出选项值，经由所述第一焊盘组驱动经由所述第一焊盘组输入的数据到与所述第二焊盘组对应的所述存储体组。

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