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    • 2. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    • 半导体存储器件及其操作方法
    • US20120140573A1
    • 2012-06-07
    • US13182526
    • 2011-07-14
    • Bo Kyeom KIM
    • Bo Kyeom KIM
    • G11C7/10G11C7/00
    • G11C7/106G11C7/1039G11C7/1042G11C7/1066G11C7/1069G11C7/222
    • A semiconductor memory device includes a page buffer configured to store data received from selected memory cells in response to a read command, a first register configured to store first data received from the page buffer in response to a first control signal, a second register configured to store second data received from the page buffer in response to a second control signal, a data I/O circuit configured to, while the first or second data is outputted from the first register or the second register, respectively, input third data received from the page buffer to the other one of the first and second registers, and a control logic configured to sequentially supply the first control signal and the second control signal in outputting the first and second data.
    • 半导体存储器件包括:页缓冲器,被配置为响应于读命令存储从所选存储器单元接收的数据;第一寄存器,被配置为存储响应于第一控制信号从页缓冲器接收的第一数据;第二寄存器, 存储响应于第二控制信号从页缓冲器接收的第二数据,数据I / O电路被配置为分别从第一寄存器或第二寄存器输出第一或第二数据,输入从第一寄存器或第二寄存器接收的第三数据 页缓冲器到第一和第二寄存器中的另一个,以及控制逻辑,被配置为在输出第一和第二数据时顺序地提供第一控制信号和第二控制信号。