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1. 发明授权

US06610808B2 Thermally cured underlayer for lithographic application 失效
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US06610808B2
公开(公告)日：2003-08-26
申请号：US10093079
申请日：2002-03-07
申请人： Binod B. De , Sanjay Malik , Gregory Spaziano , John Joseph Biafore , Patrick Foster , Sidney George Slater , Thomas Steinhausler , Andrew J. Blakeney
发明人： Binod B. De , Sanjay Malik , Gregory Spaziano , John Joseph Biafore , Patrick Foster , Sidney George Slater , Thomas Steinhausler , Andrew J. Blakeney
IPC分类号： C08F21214
CPC分类号： G03F7/11 , C09D133/14
摘要： Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.
摘要翻译：包含含羟基聚合物，氨基交联剂和热酸发生剂的热固化组合物的光刻用热固化底涂层，其中含羟基聚合物是包含下式的单元m，n和o的聚合物其中R1是H或甲基; R2是取代或未取代的C6-C14芳基丙烯酸酯或C6-C14芳基甲基丙烯酸酯基，其中取代基可以是苯基，C 1-4烷基或C 1-4烷氧基; R3是丙烯酸羟基官能化C1-C8烷基酯，甲基丙烯酸酯或C6-C14芳基，R4是C1-C10直链或支链亚烷基; p是1至5的整数，条件是在[-R4O-] p中不超过三十个碳原子; R5是C1-C10直链，支链或环状烷基，取代或未取代的C6-C14芳基或取代或未取代的C7-C15脂环族烃; m为约40至70，n为约15至35，o为约15至25。

2. 发明授权

US06924339B2 Thermally cured underlayer for lithographic application 失效
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US06924339B2
公开(公告)日：2005-08-02
申请号：US10438132
申请日：2003-05-14
申请人： Binod B. De , Sanjay Malik , Gregory Spaziano , John Joseph Biafore , Patrick Foster , Sidney George Slater , Thomas Steinhausler , Andrew J. Blakeney
发明人： Binod B. De , Sanjay Malik , Gregory Spaziano , John Joseph Biafore , Patrick Foster , Sidney George Slater , Thomas Steinhausler , Andrew J. Blakeney
IPC分类号： C08F212/14 , C08L29/02
CPC分类号： G03F7/091 , C08F8/14 , C08F212/14 , C08F220/18 , C08F2220/306 , C08F2800/10 , C08F2810/20 , C09D133/14 , G03F7/0392 , G03F7/11 , C08F8/12 , C08F2220/285
摘要： Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.
摘要翻译：包含含羟基聚合物，氨基交联剂和热酸发生剂的热固化组合物的光刻用热固化底涂层，其中含羟基聚合物是包含下式的单元m，n和o的聚合物：其中R 1是H或甲基; R 2是取代或未取代的C 6 -C 14芳基丙烯酸酯或C 6 -C 6烷基， 14个芳基甲基丙烯酸酯基团，其中取代的基团可以是苯基，C 1-4烷基或C 1-4烷氧基; R 3是羟基官能化的C 1 -C 8烷基丙烯酸酯，甲基丙烯酸酯或C 6 -C 3 > 14个芳基，R 4是C 1 -C 10直链或支链亚烷基; p是1至5的整数，条件是在[-R 4 O - ] P n中不超过30个碳原子。 R 5是C 1 -C 10直链，支链或环状烷基，取代或未取代的C 6 - C 14芳基或取代或未取代的C 7 -C 15脂肪族烃; m为约40至70，n为约15至35，o为约15至25。

3. 发明授权

US06929897B2 Photosensitive bilayer composition 失效
标题翻译：感光双层组合物
公开(公告)号：US06929897B2
公开(公告)日：2005-08-16
申请号：US10921488
申请日：2004-08-19
申请人： Patrick Foster , Gregory Spaziano , Binod B De
发明人： Patrick Foster , Gregory Spaziano , Binod B De
IPC分类号： C08F24/00 , C08F30/08 , C08F220/18 , C08F222/06 , C08F230/08 , G03C1/76 , G03F20060101 , G03F7/004 , G03F7/039 , G03F7/075 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/034 , G08F24/00 , G08F30/08
CPC分类号： C08F220/18 , C08F222/06 , C08F230/08 , G03F7/0045 , G03F7/0758 , Y10S430/106 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R1 is a moiety containing an ethylenically unsaturated polymerizable group, R2 is a C1-C3 alkylene group, and R3 is a C1-10 linear or cyclic alkyl group, a C6-10 aromatic or substituted aromatic group, a C1-8 alkoxy methyl, or a C1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.
摘要翻译：具有由结构I的单体聚合形成的单体单元的聚合物和共聚物，其中R 1是含有烯属不饱和可聚合基团的部分，R 2是C C 1 -C 3亚烷基，R 3是C 1-10烷基直链或环状的烷基， C 6-10芳族或取代的芳族基团，C 1-8烷氧基甲基或C 1-8烷氧基乙基，可用作光敏组合物的粘合剂树脂，以及用于半导体器件和材料的制造中的光刻工艺。

4. 发明申请

US20080199814A1 Device manufacturing process utilizing a double patterning process 审中-公开
标题翻译：利用双重图案化工艺的器件制造工艺
公开(公告)号：US20080199814A1
公开(公告)日：2008-08-21
申请号：US11999104
申请日：2007-12-04
申请人： Dave Brzozowy , Thomas R. Sarubbi , Sanjay Malik , Gregory Spaziano
发明人： Dave Brzozowy , Thomas R. Sarubbi , Sanjay Malik , Gregory Spaziano
IPC分类号： H01L21/00
CPC分类号： G03F7/0035 , G03F7/095
摘要： Manufacturing semiconductor device by steps of: a) providing substrate with antireflective coating or underlayer, b) applying first photosensitive composition over substrate, c) exposing first composition to radiation to produce first pattern, d) developing exposed first composition to produce an imaged bilayer stack, e) rinsing the stack, f) applying fixer to the stack, g) applying optional bake, h) rinsing the stack, i) applying second optional bake, j) applying second photosensitive composition onto the stack to produce multilayer stack, k) exposing second composition to produce second pattern offset from first pattern, l) developing exposed second composition to produce multilayer stack, and m) rinsing multilayer stack; the photosensitive compositions have photoacid generator and substantially aqueous base insoluble polymer whose solubility increases upon treatment with acid and further comprises an anchor group, and the fixer is a polyfunctional compound reactive with anchor group, but does not contain silicon and the substrate stays within a lithographic cell from at least first coating step until at least after final exposure.
摘要翻译：通过以下步骤制造半导体器件：a）向衬底提供抗反射涂层或底层，b）在衬底上施加第一感光组合物，c）将第一组合物暴露于辐射以产生第一图案，d）显影暴露的第一组合物以产生成像双层叠层 e）冲洗堆叠，f）将定影剂施加到堆叠，g）施加任选的烘烤，h）冲洗该堆叠，i）施加第二可选烘烤，j）将第二光敏组合物施加到堆叠上以产生多层堆叠，k）暴露第二组合物以产生从第一图案偏移的第二图案，l）显影暴露的第二组合物以产生多层堆叠，以及m）漂洗多层堆叠; 光敏组合物具有光酸产生剂和基本上不溶于碱的水溶性聚合物，其在用酸处理时溶解度增加，并且还包含锚定基团，并且定影剂是与锚定基团反应但不含硅的多官能化合物，并且底物保留在光刻至少在第一次涂覆步骤至少在最终曝光后。

5. 发明申请

US20050042542A1 Novel photosensitive bilayer composition 失效
标题翻译：新型感光双层组合物
公开(公告)号：US20050042542A1
公开(公告)日：2005-02-24
申请号：US10921488
申请日：2004-08-19
申请人： Patrick Foster , Gregory Spaziano , Binod De
发明人： Patrick Foster , Gregory Spaziano , Binod De
IPC分类号： C08F24/00 , C08F30/08 , C08F220/18 , C08F222/06 , C08F230/08 , G03C1/76 , G03F20060101 , G03F7/004 , G03F7/039 , G03F7/075 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： C08F220/18 , C08F222/06 , C08F230/08 , G03F7/0045 , G03F7/0758 , Y10S430/106 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R1 is a moiety containing an ethylenically unsaturated polymerizable group, R2 is a C1-C3 alkylene group, and R3 is a C1-10 linear or cyclic alkyl group, a C6-10 aromatic or substituted aromatic group, a C1-8 alkoxy methyl, or a C1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.
摘要翻译：通过结构I的单体聚合而形成的具有单体单元的聚合物和共聚物，其中R 1是含有烯键式不饱和可聚合基团的部分，R 2是C 1 -C 3亚烷基，R 3是是C 1-10直链或环状烷基，C 6-10芳香族或取代芳基，C 1-8烷氧基甲基或C 1-8烷氧基乙基，可用作感光性组合物的粘合剂树脂，光刻法在生产半导体器件和材料时。

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