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1. 发明授权

US07693000B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07693000B2
公开(公告)日：2010-04-06
申请号：US12252241
申请日：2008-10-15
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C8/00
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example; which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有基于SSTL的接口规范的差分输入缓冲器; 通过电源开关的导通而使其成为活动状态，从而在紧接着小振幅信号的小变化之后立即进行通过电流的流动并接收信号。由于只有在提供了写入操作对存储器单元的指令的情况下，输入缓冲器才进入活动状态，所以在提供写入操作的指令之前，预先使数据输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

2. 发明授权

US06954384B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06954384B2
公开(公告)日：2005-10-11
申请号：US10188804
申请日：2002-07-05
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C11/409 , G11C7/10 , G11C8/00 , G11C11/407 , G11C11/4093 , G11C7/00
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而进入活动状态，从而使通过电流流过并在其中立即接收信号小振幅信号的小变化。由于只有在提供了写入操作对存储器单元的指令的情况下，输入缓冲器才进入活动状态，所以在提供写入操作的指令之前，预先使数据输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

3. 发明授权

US08264893B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08264893B2
公开(公告)日：2012-09-11
申请号：US13238114
申请日：2011-09-21
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C7/00
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： A data input buffer is changed from an inactive to an active state after the reception of instruction for a write operation effected on a memory unit. The input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by turning on a power switch to cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, it is rendered inactive in advance before the instruction is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在对存储器单元进行的写入操作的指令的接收之后，数据输入缓冲器从非活动状态改变为活动状态。输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而使其通过电流流动并接收信号而进入激活状态，同时紧随着小的变化小振幅信号。由于只有当提供了对存储器单元的写操作指令时，输入缓冲器才进入活动状态，所以在提供指令之前预先使输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

4. 发明申请

US20100149883A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100149883A1
公开(公告)日：2010-06-17
申请号：US12710394
申请日：2010-02-23
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C7/10 , G11C8/18 , G11C7/00 , G11C7/02
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而进入活动状态，从而使通过电流流过并在其中立即接收信号小振幅信号的小变化。由于只有在提供了写入操作对存储器单元的指令的情况下，输入缓冲器才进入活动状态，所以在提供写入操作的指令之前，预先使数据输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

5. 发明授权

US08482991B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08482991B2
公开(公告)日：2013-07-09
申请号：US13600271
申请日：2012-08-31
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C7/1078
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： A data input buffer is changed from an inactive to an active state after the reception of instruction for a write operation effected on a memory unit. The input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by turning on a power switch to cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, it is rendered inactive in advance before the instruction is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在对存储器单元进行的写入操作的指令的接收之后，数据输入缓冲器从非活动状态改变为活动状态。输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而使其通过电流流动并接收信号而进入激活状态，同时紧随着小的变化小振幅信号。由于只有当提供了对存储器单元的写操作指令时，输入缓冲器才进入活动状态，所以在提供指令之前预先使输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

6. 发明授权

US08031546B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08031546B2
公开(公告)日：2011-10-04
申请号：US12710394
申请日：2010-02-23
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C7/00
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而进入活动状态，从而使通过电流流过并在其中立即接收信号小振幅信号的小变化。由于只有在提供了写入操作对存储器单元的指令的情况下，输入缓冲器才进入活动状态，所以在提供写入操作的指令之前，预先使数据输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

7. 发明申请

US20120327723A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120327723A1
公开(公告)日：2012-12-27
申请号：US13600271
申请日：2012-08-31
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C7/10
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： A data input buffer is changed from an inactive to an active state after the reception of instruction for a write operation effected on a memory unit. The input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by turning on a power switch to cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, it is rendered inactive in advance before the instruction is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在对存储器单元进行的写入操作的指令的接收之后，数据输入缓冲器从非活动状态改变为活动状态。输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而使其通过电流流动并接收信号而进入激活状态，同时紧随着小的变化小振幅信号。由于只有当提供了对存储器单元的写操作指令时，输入缓冲器才进入活动状态，所以在提供指令之前预先使输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

8. 发明授权

US07453738B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07453738B2
公开(公告)日：2008-11-18
申请号：US11174655
申请日：2005-07-06
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C7/00
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example; which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有基于SSTL的接口规范的差分输入缓冲器; 通过电源开关的导通而使其成为活动状态，从而在紧接着小振幅信号的小变化之后立即进行通过电流的流动并接收信号。由于只有在提供了写入操作对存储器单元的指令的情况下，输入缓冲器才进入活动状态，所以在提供写入操作的指令之前，预先使数据输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

9. 发明申请

US20050243644A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050243644A1
公开(公告)日：2005-11-03
申请号：US11174655
申请日：2005-07-06
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C11/409 , G11C7/10 , G11C8/00 , G11C11/407 , G11C11/4093
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example; which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有基于SSTL的接口规范的差分输入缓冲器; 通过电源开关的导通而使其成为活动状态，从而在紧接着小振幅信号的小变化之后立即进行通过电流的流动并接收信号。由于只有在提供了写入操作对存储器单元的指令的情况下，输入缓冲器才进入活动状态，所以在提供写入操作的指令之前，预先使数据输入缓冲器无效，从而减少浪费的功耗。在另一方面，通过在从写入命令发布到下一个命令发布的时间段内从主动状态变为非活动状态来降低功耗。

10. 发明授权

US06424590B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06424590B1
公开(公告)日：2002-07-23
申请号：US10023891
申请日：2001-12-21
申请人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
发明人： Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
IPC分类号： G11C800
CPC分类号： G11C7/1084 , G11C7/1066 , G11C7/1078 , G11C7/1093 , G11C7/1096
摘要： In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instructions for the memory unit is provided, the data input buffer is rendered active in advance before the instructions for the write operation is provided, whereby wastefully consumed power is reduced.
摘要翻译：在具有能够向每个存储单元输入写入数据的数据输入缓冲器的半导体器件中，在接收到对存储器单元进行的写入操作的指令之后，数据输入缓冲器从非活动状态改变为有效状态。数据输入缓冲器是具有例如基于SSTL的接口规格的差分输入缓冲器，其通过接通电源开关而进入活动状态，从而使通过电流流过并在其中立即接收信号小振幅信号的小变化。由于输入缓冲器仅在提供存储单元的写入操作指令时才进入活动状态，所以在提供用于写入操作的指令之前，数据输入缓冲器被预先激活，从而减少浪费的功率。

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