专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050014358A1 Semiconductor device having void free contact and method for fabricating the contact 失效
标题翻译：具有无空隙接触的半导体器件和用于制造接触的方法
公开(公告)号：US20050014358A1
公开(公告)日：2005-01-20
申请号：US10893618
申请日：2004-07-15
申请人： Bi-O Lim
发明人： Bi-O Lim
IPC分类号： H01L21/28 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76877 , H01L2221/1089
摘要： The present invention relates to a semiconductor device and a method for fabricating a contact of the semiconductor device, and in particular, to the method for fabricating a semiconductor contact of the device for electrically coupling upper and lower metal wires or coupling an electrode and a metal wire and a method for fabricating the contact. The method comprises forming an interlayer insulating layer on a semiconductor substrate; forming a contact hole by selectively removing the interlayer insulating layer; forming a barrier metal layer on a surface of the interlayer insulating layer; increasing roughness of a surface of the interlayer insulating layer at an area around an inlet of the contact hole; forming a contact by filling the contact hole with a conductive material. According to this method, the conductive layer is slowly deposited around the inlet of the contact hole relative to the other areas of the contact hole, such that it is possible to form a void free contact with high aspect ration.
摘要翻译：本发明涉及一种用于制造半导体器件的接触的半导体器件和方法，特别涉及用于制造用于电耦合上下金属线或耦合电极和金属的器件的半导体接触的方法线和用于制造接触的方法。该方法包括在半导体衬底上形成层间绝缘层; 通过选择性地去除所述层间绝缘层来形成接触孔; 在所述层间绝缘层的表面上形成阻挡金属层; 在接触孔的入口周围的区域增加层间绝缘层的表面的粗糙度; 通过用导电材料填充接触孔来形成接触。根据该方法，导电层相对于接触孔的其他区域缓慢地沉积在接触孔的入口周围，使得可以形成具有高的纵向比例的无空隙接触。

2. 发明授权

US07041597B2 Semiconductor device having void free contact and method for fabricating the contact 失效
标题翻译：具有无空隙接触的半导体器件和用于制造接触的方法
公开(公告)号：US07041597B2
公开(公告)日：2006-05-09
申请号：US10893618
申请日：2004-07-15
申请人： Bi-O Lim
发明人： Bi-O Lim
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76877 , H01L2221/1089
摘要： The present invention relates to a semiconductor device and a method for fabricating a contact of the semiconductor device, and in particular, to the method for fabricating a semiconductor contact of the device for electrically coupling upper and lower metal wires or coupling an electrode and a metal wire and a method for fabricating the contact. The method includes forming an interlayer insulating layer on a semiconductor substrate; forming a contact hole by selectively removing the interlayer insulating layer; forming a barrier metal layer on a surface of the interlayer insulating layer, increasing roughness of a surface of the barrier layer at an area around an inlet of the contact hole; and forming a contact by filling the contact hole with a conductive material. According to this method, the conductive layer is slowly deposited around the inlet of the contact hole relative to the other areas of the contact bole, such that it is possible to form a void free contact with a high aspect ratio.
摘要翻译：本发明涉及一种用于制造半导体器件的接触的半导体器件和方法，特别涉及用于制造用于电耦合上下金属线或耦合电极和金属的器件的半导体接触的方法线和用于制造接触的方法。该方法包括在半导体衬底上形成层间绝缘层; 通过选择性地去除所述层间绝缘层来形成接触孔; 在所述层间绝缘层的表面上形成阻挡金属层，在所述接触孔的入口周围的区域增加所述阻挡层的表面的粗糙度; 以及通过用导电材料填充接触孔来形成接触。根据该方法，相对于接触片的其他区域，导电层缓慢地沉积在接触孔的入口周围，使得可以形成具有高纵横比的无空隙接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式