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    • 6. 发明授权
    • Thin film solar cell
    • 薄膜太阳能电池
    • US6124545A
    • 2000-09-26
    • US70344
    • 1998-04-30
    • Stefan BauerWolfgang HerbstBernd Schroeder
    • Stefan BauerWolfgang HerbstBernd Schroeder
    • H01L31/075H01L31/20H01L31/00
    • H01L31/202H01L31/075Y02E10/548Y02P70/521
    • In a thin-film solar cell having at least a p-type layer, an intrinsic layer of amorphous silicon and an n-type layer (p-i-n structure), the intrinsic layer has on the interface with the p-type layer an intrinsic interlayer with lower hydrogen content and greater density than the remaining intrinsic layer. The intrinsic layer is deposited on the p-type layer thermocatalytically by the hot wire method, the temperature of the filament being adjusted for controlling the layer properties, and the temperature of the substrate being less than 300.degree. C. The hot wire method can be conducted with an evacuable chamber in which a tantalum wire subjected to at least one weight is mounted in a meander shape at a distance from the substrate holder.
    • 在具有至少p型层,非晶硅本征层和n型层(pin结构)的薄膜太阳能电池中,本征层在与p型层的界面上具有本征中间层 较低的氢含量和比剩余的本征层更大的密度。 本征层通过热丝法热分解沉积在p型层上,调节丝的温度以控制层的性能,并且衬底的温度低于300℃。热丝法可以是 用可抽出的室进行,其中经受至少一个重量的钽线以与基板保持器一定距离的曲折形状安装。