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1. 发明授权

US07639558B2 Phase change random access memory (PRAM) device 有权
标题翻译：相变随机存取存储器（PRAM）设备
公开(公告)号：US07639558B2
公开(公告)日：2009-12-29
申请号：US11315347
申请日：2005-12-23
申请人： Beak-hyung Cho , Kwang-jin Lee , Mu-hui Park
发明人： Beak-hyung Cho , Kwang-jin Lee , Mu-hui Park
IPC分类号： G11C8/08 , G11C8/14
CPC分类号： G11C11/5678 , G11C7/12 , G11C13/0004 , G11C13/0028 , G11C2213/72
摘要： A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.
摘要翻译：相变存储器件具有字线驱动器布局，其允许减小器件的核心区域的尺寸。一方面，相变存储器件包括共享字线的多个存储单元块和驱动该字线的多个字线驱动器。每个字线驱动器包括用于对字线预充电的预充电装置和用于放电字线的放电装置，并且其中预充电装置和放电装置交替地位于多个存储单元块之间。

2. 发明申请

US20060291277A1 Phase change random access memory (PRAM) device 有权
公开(公告)号：US20060291277A1
公开(公告)日：2006-12-28
申请号：US11315347
申请日：2005-12-23
申请人： Beak-hyung Cho , Kwang-jin Lee , Mu-hui Park
发明人： Beak-hyung Cho , Kwang-jin Lee , Mu-hui Park
IPC分类号： G11C11/00
CPC分类号： G11C11/5678 , G11C7/12 , G11C13/0004 , G11C13/0028 , G11C2213/72
摘要： A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.

3. 发明申请

US20070217253A1 Non-volatile phase-change memory device and associated program-suspend-read operation 有权
标题翻译：非易失性相变存储器件和相关的程序挂起读操作
公开(公告)号：US20070217253A1
公开(公告)日：2007-09-20
申请号：US11486100
申请日：2006-07-14
申请人： Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
发明人： Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
IPC分类号： G11C11/00
CPC分类号： G11C8/12 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/0078
摘要： A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.
摘要翻译：一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

4. 发明授权

US07349245B2 Non-volatile phase-change memory device and associated program-suspend-read operation 有权
标题翻译：非易失性相变存储器件和相关的程序挂起读操作
公开(公告)号：US07349245B2
公开(公告)日：2008-03-25
申请号：US11486100
申请日：2006-07-14
申请人： Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
发明人： Hye-jin Kim , Kwang-jin Lee , Sang-Beom Kang , Mu-hui Park
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C8/12 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/0078
摘要： A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.
摘要翻译：一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

5. 发明授权

US08190851B2 Resistance variable memory device 有权
标题翻译：电阻变量存储器件
公开(公告)号：US08190851B2
公开(公告)日：2012-05-29
申请号：US12617758
申请日：2009-11-13
申请人： Kwang-jin Lee , Young-kug Moon , Kwang-ho Kim
发明人： Kwang-jin Lee , Young-kug Moon , Kwang-ho Kim
IPC分类号： G06F12/00
CPC分类号： G06F12/0215 , G06F12/0238 , G06F2212/7203 , G11C7/103 , G11C13/0004 , G11C13/004 , Y02D10/13
摘要： A resistance variable memory device includes a resistance variable memory cell array, a data register that prefetches read data of the resistance variable memory cell array, a data output unit that receives the prefetched read data from the data register and outputs the received data, and a page mode setting unit that sets one of a first page mode and a second page mode as a page mode. In the first page mode, the data output unit sequentially reads the read data prefetched in the data register as page addresses are sequentially received, and in the second page mode, the data output unit sequentially reads the read data prefetched in the data register after a start page address among a plurality of page addresses has been received.
摘要翻译：电阻可变存储器件包括电阻可变存储单元阵列，预取电阻可变存储单元阵列的读取数据的数据寄存器，从数据寄存器接收预取的读取数据并输出接收的数据的数据输出单元，以及页面模式设置单元，其将第一页面模式和第二页面模式之一设置为页面模式。在第一页面模式中，数据输出单元顺序地读取在数据寄存器中预取的读取数据，因为顺序地接收页面地址，而在第二页面模式中，数据输出单元顺序地读取在数据寄存器中预读取的读取数据已经接收到多个页地址中的起始页地址。

6. 发明授权

US07701757B2 Phase change random access memory device and related methods of operation 有权
标题翻译：相变随机存取存储器件及相关操作方法
公开(公告)号：US07701757B2
公开(公告)日：2010-04-20
申请号：US11834845
申请日：2007-08-07
申请人： Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
发明人： Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A method of operating a phase change random access memory (PRAM) device comprises performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.
摘要翻译：一种操作相变随机存取存储器（PRAM）装置的方法包括执行程序操作以将数据存储在所述装置的所选择的PRAM单元中，其中所述程序操作包括多个顺序程序循环。该方法还包括在编程操作的中间暂停编程操作，并且在暂停编程操作之后，响应于恢复命令恢复程序操作。

7. 发明授权

US08250289B2 Phase-change random access memory and method of setting boot block therein 有权
标题翻译：相变随机存取存储器及其中设置引导块的方法
公开(公告)号：US08250289B2
公开(公告)日：2012-08-21
申请号：US12402006
申请日：2009-03-11
申请人： Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
发明人： Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0238 , G06F12/0223 , Y02D10/13
摘要： A semiconductor memory device includes a memory cell array and the memory cell array includes: a plurality of memory blocks and at least one setting unit. The at least one setting unit stores a location and a size of a boot data storage region within the plurality of memory blocks that stores boot data. The at least one setting units may include a register for setting usage of each memory block as a boot block. The semiconductor device may be a phase-change memory.
摘要翻译：半导体存储器件包括存储单元阵列，存储单元阵列包括：多个存储块和至少一个设置单元。所述至少一个设置单元将存储引导数据的多个存储块内的引导数据存储区域的位置和大小存储起来。至少一个设置单元可以包括用于将每个存储器块的使用设置为引导块的寄存器。半导体器件可以是相变存储器。

8. 发明授权

US07535747B2 Phase change random access memory and related methods of operation 有权
标题翻译：相变随机存取存储器及相关操作方法
公开(公告)号：US07535747B2
公开(公告)日：2009-05-19
申请号：US11844512
申请日：2007-08-24
申请人： Kwang-jin Lee , Woo-yeong Cho
发明人： Kwang-jin Lee , Woo-yeong Cho
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： In a phase change random access memory (PRAM) device, data is programmed in selected memory cells using a plurality of program loops. In each program loop, division program operations for cell groups including the selected memory cells are performed in consecutive timeslots.
摘要翻译：在相变随机存取存储器（PRAM）装置中，使用多个程序循环将数据编程在所选存储单元中。在每个程序循环中，在连续的时隙中执行包括所选存储单元的单元组的分割程序操作。

9. 发明申请

US20080112220A1 Input circuit of a non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件的输入电路
公开(公告)号：US20080112220A1
公开(公告)日：2008-05-15
申请号：US11984145
申请日：2007-11-14
申请人： Kwang-jin Lee , Won-Seok Lee , Qi Wang , Hye-Jin Kim , Joon Yong Choi
发明人： Kwang-jin Lee , Won-Seok Lee , Qi Wang , Hye-Jin Kim , Joon Yong Choi
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C7/1078 , G11C7/1084 , G11C7/225 , G11C16/10
摘要： A non-volatile semiconductor memory device may include a memory cell array that may include a plurality of memory transistors; a input circuit that may control a voltage level of an internal reference voltage and a delay time of an internal clock signal in response to an MRS trim code or an electric fuse trim code, and that may generate a first buffered input signal; a column gate that may gate the first buffered input signal in response to a decoded column address signal; and a sense amplifier that may amplify an output signal of the memory cell array to output to the column gate, and that may receive an output signal of the column gate to output to the memory cell array. The non-volatile semiconductor memory device may properly buffer an input signal of a small swing range.
摘要翻译：非易失性半导体存储器件可以包括可以包括多个存储晶体管的存储单元阵列; 输入电路，其可以响应于MRS修剪代码或电熔丝修剪代码来控制内部参考电压的电压电平和内部时钟信号的延迟时间，并且可以产生第一缓冲输入信号; 列门，其可以响应于解码列地址信号而选通第一缓冲输入信号; 以及读出放大器，其可以放大存储单元阵列的输出信号以输出到列门，并且可以接收列门的输出信号以输出到存储器单元阵列。非易失性半导体存储器件可以适当地缓冲小摆动范围的输入信号。

10. 发明授权

US08013063B2 Acryl-silicone hybrid impact modifiers and vinyl chloride resin compositions having the same 有权
标题翻译：丙烯酸酯 - 硅氧烷混合抗冲改性剂和具有该丙烯酸树脂的氯乙烯树脂组合物
公开(公告)号：US08013063B2
公开(公告)日：2011-09-06
申请号：US10567000
申请日：2004-05-13
申请人： Kwang-jin Lee , Jeong-heon Ahn , Hye-kyong Lee
发明人： Kwang-jin Lee , Jeong-heon Ahn , Hye-kyong Lee
IPC分类号： C08F30/08 , C08F30/00
CPC分类号： C08F265/00 , C08F265/04 , C08F265/06 , C08F265/10 , C08F285/00 , C08F291/00 , C08G77/442 , C08L27/06 , C08L51/00 , C08L51/003 , Y10S525/902 , C08F2/22 , C08L2666/24 , C08L2666/02
摘要： The present invention relates to acryl-silicone hybrid impact modifiers, the method of their manufacture, and vinyl chloride resin compositions containing the above. The acryl-silicone hybrid impact modifier of the present invention contains a seed obtained through emulsion copolymerization of vinyl monomers and hydrophilic monomers; an acryl-silicone hybrid rubber core covering the seed in which a polyorganosiloxane rubber phase is dispersed locally onto the inner part and surface of the acrylic rubber core containing alkyl acrylate polymers and a shell covering the above rubber core and containing alkyl methacrylate polymers. Thermoplastic resins containing the above, particularly by being added to vinyl chloride resins, they have effects of granting superior impact resistance, weatherability, and high gloss.
摘要翻译：本发明涉及丙烯酸 - 硅氧烷混合抗冲改性剂，其制造方法和含有上述的氯乙烯树脂组合物。本发明的丙烯酸 - 硅氧烷杂化抗冲改性剂含有通过乙烯基单体和亲水性单体的乳液共聚获得的种子; 覆盖种子的丙烯酸 - 硅氧烷混合橡胶芯，其中聚有机硅氧烷橡胶相局部分散在丙烯酸酯橡胶芯的内部和表面上，该丙烯酸橡胶芯含有丙烯酸烷基酯聚合物和覆盖上述橡胶芯并且含有甲基丙烯酸烷基酯聚合物的壳。含有上述的热塑性树脂，特别是通过加入到氯乙烯树脂中，它们具有赋予优异的耐冲击性，耐候性和高光泽度的效果。

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