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1. 发明申请

US20110315220A1 PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL 审中-公开
标题翻译：用于形成光伏电池背部接触的光电池和方法
公开(公告)号：US20110315220A1
公开(公告)日：2011-12-29
申请号：US12826234
申请日：2010-06-29
申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Faisal Razi Ahmad , David William Vernooy
发明人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Faisal Razi Ahmad , David William Vernooy
IPC分类号： H01L31/0376 , H01L31/18 , H01L31/0256
CPC分类号： H01L31/073 , H01L31/022425 , H01L31/02963 , H01L31/03925 , H01L31/1836 , Y02E10/543
摘要： Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer.
摘要翻译：提供了用于形成包括至少一个半导体层的光伏电池的背接触的方法。一种方法包括在金属接触件上沉积至少一个背接触材料。背面接触材料包括金属氮化物或金属磷化物。该方法还包括在背接触材料上沉积包括镉和碲的吸收层，并对后接触材料进行热处理，使得背接触材料与吸收层相互作用以形成降低光伏电池的接触电阻的中间层。还提供了一种光伏电池，其包括金属接触件，设置在金属接触件上的至少一个背接触材料以及包含设置在背面接触材料上方的包含镉和碲的材料的吸收层。中间层设置在背接触材料和吸收层之间，并且包括背接触材料和吸收层材料的组成梯度层。光伏电池还包括设置在吸收层上方的窗口层。

2. 发明申请

US20130192667A1 PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US20130192667A1
公开(公告)日：2013-08-01
申请号：US13362813
申请日：2012-01-31
申请人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov
发明人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要翻译：介绍了光伏器件。光电器件包括透明导电层; 设置在所述透明导电层上的窗口层; 以及设置在窗口层上的吸收层。窗口层包括邻近透明导电层设置的低扩散层和介于低扩散层和吸收层之间的高扩散性层。还提出了制造光伏器件的方法。

3. 发明申请

US20110259423A1 METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS 有权
标题翻译：用于形成用于碲化镉光伏电池的反接触电极的方法
公开(公告)号：US20110259423A1
公开(公告)日：2011-10-27
申请号：US12765225
申请日：2010-04-22
申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
发明人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
IPC分类号： H01L31/0296 , H01L31/0216
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/0296 , H01L31/073 , H01L33/0083 , Y02E10/543
摘要： A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
摘要翻译：提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

4. 发明申请

US20130157405A1 MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20130157405A1
公开(公告)日：2013-06-20
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

5. 发明申请

US20120132268A1 ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING 审中-公开
标题翻译：电极，光电器件及其制造方法
公开(公告)号：US20120132268A1
公开(公告)日：2012-05-31
申请号：US12956761
申请日：2010-11-30
申请人： Juan Carlos Rojo , Bastiaan Arie Korevaar , Hongbo Cao , Jinbo Cao , Joseph Darryl Michael
发明人： Juan Carlos Rojo , Bastiaan Arie Korevaar , Hongbo Cao , Jinbo Cao , Joseph Darryl Michael
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022466 , H01L31/073 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented.
摘要翻译：在本发明的一个方面，提供了一种透明电极。透明电极包括基板和设置在基板上的透明层。透明层包括（a）包括氧化镉锡的第一区域; （b）包括锡和氧的第二区域; 和（c）介于第一区域和第二区域之间的包括镉，锡和氧的过渡区域，其中过渡区域中镉与锡的原子比在过渡区域的厚度上变化。第二区域还具有大于第一区域的电阻率的电阻率。还提出了光电器件，光伏模块，制造方法。

6. 发明授权

US08524524B2 Methods for forming back contact electrodes for cadmium telluride photovoltaic cells 有权
标题翻译：形成碲化镉光电池的接触电极的方法
公开(公告)号：US08524524B2
公开(公告)日：2013-09-03
申请号：US12765225
申请日：2010-04-22
申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
发明人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
IPC分类号： H01L21/00
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/0296 , H01L31/073 , H01L33/0083 , Y02E10/543
摘要： A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
摘要翻译：提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

7. 发明授权

US09496446B2 Photovoltaic devices and method of making 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US09496446B2
公开(公告)日：2016-11-15
申请号：US13362813
申请日：2012-01-31
申请人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov , Hongying Peng
发明人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov , Hongying Peng
IPC分类号： H01L31/00 , H01L31/073 , H01L31/0749
CPC分类号： H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要翻译：介绍了光伏器件。光电器件包括透明导电层; 设置在所述透明导电层上的窗口层; 以及设置在窗口层上的吸收层。窗口层包括邻近透明导电层设置的低扩散层和介于低扩散层和吸收层之间的高扩散性层。还提出了制造光伏器件的方法。

8. 发明授权

US09147582B2 Manufacturing methods for semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09147582B2
公开(公告)日：2015-09-29
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296 , H01L21/477 , H01L31/18 , H01L31/0392
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

9. 发明申请

US20120164785A1 METHOD OF MAKING A TRANSPARENT CONDUCTIVE OXIDE LAYER AND A PHOTOVOLTAIC DEVICE 有权
标题翻译：制造透明导电氧化层和光伏器件的方法
公开(公告)号：US20120164785A1
公开(公告)日：2012-06-28
申请号：US12976166
申请日：2010-12-22
申请人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
发明人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
IPC分类号： H01L31/0264 , H01L31/0224
CPC分类号： H01L31/1884 , C23C14/0036 , C23C14/08 , C23C14/35 , C23C14/548 , C23C14/56 , C23C14/5806 , H01L31/022466 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要翻译：在本发明的一个方面，提供了一种方法。该方法包括在支撑体上设置基本上非晶态的氧化镉锡氧化物层; 并且在基本上不含镉的气氛中从外部源热处理基本无定形的镉锡氧化物层以形成透明层，其中该透明层的电阻率小于约2×10 -4 Ohm-cm。还提供了制造光伏器件的方法。

10. 发明授权

US08476105B2 Method of making a transparent conductive oxide layer and a photovoltaic device 有权
标题翻译：制造透明导电氧化物层和光伏器件的方法
公开(公告)号：US08476105B2
公开(公告)日：2013-07-02
申请号：US12976166
申请日：2010-12-22
申请人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
发明人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
IPC分类号： H01L31/073 , H01L31/0224 , C23C14/00 , H01L31/18 , C23C14/08
CPC分类号： H01L31/1884 , C23C14/0036 , C23C14/08 , C23C14/35 , C23C14/548 , C23C14/56 , C23C14/5806 , H01L31/022466 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要翻译：在本发明的一个方面，提供了一种方法。该方法包括在支撑体上设置基本上非晶态的氧化镉锡氧化物层; 并且在基本上不含镉的气氛中从外部源热处理基本无定形的镉锡氧化物层以形成透明层，其中该透明层的电阻率小于约2×10 -4 Ohm-cm。还提供了制造光伏器件的方法。

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