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1. 发明授权

US07744690B2 Blast-resistant concrete also suitable for limiting penetration of ballistic fragments 失效
标题翻译：抗爆混凝土也适用于限制弹道碎片的穿透
公开(公告)号：US07744690B2
公开(公告)日：2010-06-29
申请号：US11390084
申请日：2006-03-28
申请人： Bartley P. Durst , Billy D. Neeley , Edward F. O'Neil , Toney K. Cummins
发明人： Bartley P. Durst , Billy D. Neeley , Edward F. O'Neil , Toney K. Cummins
IPC分类号： C04B7/02
CPC分类号： C04B28/02 , C04B2111/00206 , C04B2111/34 , C04B2201/50 , F41H5/24 , Y02W30/94 , Y10S264/43 , Y10T428/131 , Y10T428/24479 , C04B14/026 , C04B14/043 , C04B14/06 , C04B14/062 , C04B14/30 , C04B14/301 , C04B14/34 , C04B14/383 , C04B14/386 , C04B18/146 , C04B20/008 , C04B24/2641 , C04B40/0028 , C04B20/0048 , C04B20/1074 , C04B2103/302
摘要： Concrete with improved strength and toughness. A uniform mix of first constituents comprises: cement of Blaine fineness of 280-360 m2/kg; sand at a mass ratio of 0.75-1.25 of the cement; silica fume at a mass ratio of 0.15-0.4 of the cement; silica flour at a mass ratio of 0.15-0.3 of the cement; and microinclusions at a mass ratio up to 0.35 of the cement. This is then mixed with a blend of second constituents comprising a specified amount of an HRWRA and an amount of water at a mass ratio of 0.2-0.35 of the cement. This is mixed sufficiently to form a uniform cement-based paste to which an amount of macrofibers at a mass ratio of up to 0.35 of the cement is added to yield a uniform product. Nanoinclusions may be added to improve crack resistance and increase density.
摘要翻译：具有改善强度和韧性的混凝土。第一成分的均匀混合物包括：Blaine细度为280-360m2 / kg的水泥; 砂浆的质量比为0.75-1.25; 硅灰质量比为0.15-0.4的水泥; 二氧化硅粉以质量比为0.15-0.3的水泥; 质量比高达0.35的微结晶。然后将其与包含特定量的HRWRA和水的质量比为0.2-0.35的水的第二组分的混合物混合。将其充分混合以形成均匀的水泥基糊料，其中加入一定量的质量比高达0.35的水泥的大分子纤维以产生均匀的产物。可以添加纳米结构以提高抗裂性和增加密度。

2. 发明授权

US08016938B2 Structures and components comprising blast-resistant concrete also suitable for limiting penetration of ballistic fragments 有权
标题翻译：包括防爆混凝土的结构和部件也适用于限制弹道碎片的穿透
公开(公告)号：US08016938B2
公开(公告)日：2011-09-13
申请号：US12775873
申请日：2010-05-07
申请人： Bartley P. Durst , Billy D. Neeley , Edward F. O'Neil , Toney K. Cummins
发明人： Bartley P. Durst , Billy D. Neeley , Edward F. O'Neil , Toney K. Cummins
IPC分类号： C04B7/02
CPC分类号： C04B28/02 , C04B2111/00206 , C04B2111/34 , C04B2201/50 , F41H5/24 , Y02W30/94 , Y10S264/43 , Y10T428/131 , Y10T428/24479 , C04B14/026 , C04B14/043 , C04B14/06 , C04B14/062 , C04B14/30 , C04B14/301 , C04B14/34 , C04B14/383 , C04B14/386 , C04B18/146 , C04B20/008 , C04B24/2641 , C04B40/0028 , C04B20/0048 , C04B20/1074 , C04B2103/302
摘要： Concrete structures and components with improved strength and toughness. A uniform mix of first constituents comprises: cement of Blaine fineness of 280-360 m2/kg; sand at a mass ratio of 0.75-1.25 of the cement; silica fume at a mass ratio of 0.15-0.4 of the cement; silica flour at a mass ratio of 0.15-0.3 of the cement; and microinclusions at a mass ratio up to 0.35 of the cement. This is then mixed with a blend of second constituents comprising a specified amount of an HRWRA and an amount of water at a mass ratio of 0.2-0.35 of the cement. This is mixed sufficiently to form a uniform cement-based paste to which an amount of macrofibers at a mass ratio of up to 0.35 of the cement is added to yield a uniform product. Nanoinclusions may be added to improve crack resistance and increase density.
摘要翻译：具有改善强度和韧性的混凝土结构和部件。第一成分的均匀混合物包括：Blaine细度为280-360m2 / kg的水泥; 砂浆的质量比为0.75-1.25; 硅灰质量比为0.15-0.4的水泥; 二氧化硅粉以质量比为0.15-0.3的水泥; 质量比高达0.35的微结晶。然后将其与包含特定量的HRWRA和水的质量比为0.2-0.35的水的第二组分的混合物混合。将其充分混合以形成均匀的水泥基糊料，其中加入一定量的质量比高达0.35的水泥的大分子纤维以产生均匀的产物。可以添加纳米结构以提高抗裂性和增加密度。

3. 发明申请

US20100221465A1 Structures and Components comprising Blast-Resistant Concrete also Suitable for Limiting Penetration of Ballistic Fragments 有权
标题翻译：包括防混凝土的结构和组件也适用于限制弹道碎片的渗透
公开(公告)号：US20100221465A1
公开(公告)日：2010-09-02
申请号：US12775873
申请日：2010-05-07
申请人： Bartley P. Durst , Billy D. Neeley , Edward F. O'Neil , Toney K. Cummins
发明人： Bartley P. Durst , Billy D. Neeley , Edward F. O'Neil , Toney K. Cummins
IPC分类号： C04B7/02 , C04B14/04 , C04B14/48 , C04B14/40 , C04B24/10 , C04B24/00 , C04B14/38 , B28B1/20 , B28B1/14 , B29D23/00 , C08K3/36
CPC分类号： C04B28/02 , C04B2111/00206 , C04B2111/34 , C04B2201/50 , F41H5/24 , Y02W30/94 , Y10S264/43 , Y10T428/131 , Y10T428/24479 , C04B14/026 , C04B14/043 , C04B14/06 , C04B14/062 , C04B14/30 , C04B14/301 , C04B14/34 , C04B14/383 , C04B14/386 , C04B18/146 , C04B20/008 , C04B24/2641 , C04B40/0028 , C04B20/0048 , C04B20/1074 , C04B2103/302
摘要： Concrete structures and components with improved strength and toughness. A uniform mix of first constituents comprises: cement of Blaine fineness of 280-360 m2/kg; sand at a mass ratio of 0.75-1.25 of the cement; silica fume at a mass ratio of 0.15-0.4 of the cement; silica flour at a mass ratio of 0.15-0.3 of the cement; and microinclusions at a mass ratio up to 0.35 of the cement. This is then mixed with a blend of second constituents comprising a specified amount of an HRWRA and an amount of water at a mass ratio of 0.2-0.35 of the cement. This is mixed sufficiently to form a uniform cement-based paste to which an amount of macrofibers at a mass ratio of up to 0.35 of the cement is added to yield a uniform product. Nanoinclusions may be added to improve crack resistance and increase density.
摘要翻译：具有改善强度和韧性的混凝土结构和部件。第一成分的均匀混合物包括：Blaine细度为280-360m2 / kg的水泥; 砂浆的质量比为0.75-1.25; 硅灰质量比为0.15-0.4的水泥; 二氧化硅粉以质量比为0.15-0.3的水泥; 质量比高达0.35的微结晶。然后将其与包含特定量的HRWRA和水的质量比为0.2-0.35的水的第二组分的混合物混合。将其充分混合以形成均匀的水泥基糊料，其中加入一定量的质量比高达0.35的水泥的大分子纤维以产生均匀的产物。可以添加纳米结构以提高抗裂性和增加密度。

4. 发明授权

US4599520A Boosted phase driver 失效
标题翻译：升压相位驱动器
公开(公告)号：US4599520A
公开(公告)日：1986-07-08
申请号：US575612
申请日：1984-01-31
申请人： John A. Gabric , Edward F. O'Neil
发明人： John A. Gabric , Edward F. O'Neil
IPC分类号： G06F1/04 , G11C11/407 , H03K5/02 , H03K17/06 , H03K19/017 , H03K19/096 , H03K5/135 , H03K17/10 , H03K17/687
CPC分类号： H03K19/01735
摘要： An FET double boosted clock driver for producing a clock signal having an amplitude greater than the drain supply voltage. The clock output of a second clock driver is capacitively coupled to the clock output of a first clock driver. The second clock driver boosts the voltage on the source of an enhancement mode (output) FET of the first clock driver. The output FET has its gate connected to a bootstrapped node and its drain connected to a drain voltage source (VDD). A depletion mode FET forms a feedback path between the source of the output node FET and the bootstrapped node. When the bootstrapped node is bootstrapped to VDD+VT, the output FET precharges the clock output to VDD. When the potential of the clock output approaches VDD, the depletion mode FET discharges the bootstrapped node to an input clock. Thus, the potential of the gate of the output FET is clamped to the drain supply voltage when the output is subsequently boosted by the capacitively coupled second clock driver, without adversely effecting the timing and the precharging of the enhancement mode output FET.
摘要翻译： FET双升压时钟驱动器，用于产生幅度大于漏极电源电压的时钟信号。第二时钟驱动器的时钟输出电容耦合到第一时钟驱动器的时钟输出。第二个时钟驱动器提升了第一个时钟驱动器的增强模式（输出）FET源极上的电压。输出FET的栅极连接到自举节点，其漏极连接到漏极电压源（VDD）。耗尽型FET在输出节点FET的源和引导节点之间形成反馈路径。当自举节点自举到VDD + VT时，输出FET将时钟输出预充电至VDD。当时钟输出的电位接近VDD时，耗尽型FET将自举节点放电到输入时钟。因此，当输出随后由电容耦合的第二时钟驱动器升压时，输出FET的栅极的电位被钳位到漏极电源电压，而不会不利地影响增强模式输出FET的定时和预充电。

5. 发明授权

US6090673A Device contact structure and method for fabricating same 失效
标题翻译：器件接触结构及其制造方法
公开(公告)号：US6090673A
公开(公告)日：2000-07-18
申请号：US175304
申请日：1998-10-20
申请人： Archibald J. Allen , Toshiharu Furukawa , Edward F. O'Neil , Mark C. Hakey , Roger A. Verhelst , David V. Horak
发明人： Archibald J. Allen , Toshiharu Furukawa , Edward F. O'Neil , Mark C. Hakey , Roger A. Verhelst , David V. Horak
IPC分类号： H01L21/336 , H01L21/768 , H01L27/11 , H01L21/3205
CPC分类号： H01L21/76895 , H01L27/1104
摘要： The present invention overcomes the difficulties found in the background art by providing a direct low resistive contact between devices on a semiconductor chip without excessive current leakage. Current leakage is prevented in the preferred design by using silicon on insulator (SOI) construction for the chip. By constructing the direct contact over an insulator, such as silicon dioxide, current leakage is minimized. The preferred embodiment uses silicide to connect a polysilicon gate to a doped region of the substrate. An alternative embodiment of the present invention provides for the use of conductive studs to electrically connect devices. An increased density of approximately twenty percent may be realized using the present invention.
摘要翻译：本发明通过在半导体芯片上的器件之间提供直接的低电阻接触而克服了背景技术中的困难，而没有过多的电流泄漏。通过使用芯片上的绝缘体硅（SOI）结构，在优选设计中防止电流泄漏。通过在诸如二氧化硅之类的绝缘体上构建直接接触，电流泄漏最小化。优选实施例使用硅化物将多晶硅栅极连接到衬底的掺杂区域。本发明的替代实施例提供了使用导电柱来电连接装置。使用本发明可以实现大约20％的增加的密度。

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