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    • 3. 发明授权
    • Solar cell and method of manufacture
    • 太阳能电池及其制造方法
    • US07339110B1
    • 2008-03-04
    • US10412638
    • 2003-04-10
    • William P. MulliganMichael J. CudzinovicThomas PassDavid SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • William P. MulliganMichael J. CudzinovicThomas PassDavid SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • H01L31/00
    • H01L31/022441H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer in offset levels through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an antireflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.
    • 使用比微电子电路处理便宜的处理技术容易地制造的太阳能电池。 在优选实施例中,打印技术用于选择性地形成用于蚀刻氧化硅和扩散掺杂剂以及形成向扩散区域的金属接触的掩模。 在优选实施例中,通过使用掩模和蚀刻技术,以偏移水平交替地在晶片的表面中形成p掺杂区域和n掺杂区域。 通过首先形成包含与硅接触的第一层(例如铝)并用作红外反射器的第二层,作为扩散阻挡的第二层这样的钛钨,首先形成种子层堆叠,从而对p区和n区进行金属接触,以及 第三层起镀层的作用。 然后将诸如铜的厚导电层电镀在种子层上,并且移除电镀线之间的种子层。 晶片的前表面优选通过蚀刻或机械磨蚀而被纹理化,其中抗反射层设置在纹理表面上。 可以在纹理化表面中提供场层,其组合效果是非常低的表面复合速度。
    • 4. 发明授权
    • Solar cell and method of manufacture
    • 太阳能电池及其制造方法
    • US07897867B1
    • 2011-03-01
    • US12069993
    • 2008-02-13
    • William P. MulliganMichael J. CudzinovicThomas PassDavid SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • William P. MulliganMichael J. CudzinovicThomas PassDavid SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • H01L31/00
    • H01L31/022441H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an IR reflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.
    • 使用比微电子电路处理便宜的处理技术容易地制造的太阳能电池。 在优选实施例中,打印技术用于选择性地形成用于蚀刻氧化硅和扩散掺杂剂以及形成向扩散区域的金属接触的掩模。 在优选实施例中,通过使用掩模和蚀刻技术,在晶片的表面中交替地形成p掺杂区域和n掺杂区域。 通过首先形成包含与硅接触的第一层(例如铝)并用作红外反射器的第二层,作为扩散阻挡的第二层这样的钛钨,首先形成种子层堆叠,从而对p区和n区进行金属接触,以及 第三层起镀层的作用。 然后将诸如铜的厚导电层电镀在种子层上,并且移除电镀线之间的种子层。 晶片的前表面优选通过蚀刻或机械磨蚀而被纹理化,其中IR反射层设置在纹理表面上。 可以在纹理化表面中提供场层,其组合效果是非常低的表面复合速度。
    • 5. 发明授权
    • Method of manufacturing solar cell
    • 制造太阳能电池的方法
    • US07883343B1
    • 2011-02-08
    • US11692657
    • 2007-03-28
    • William P. MulliganMichael J. CudzinovicThomas PassDavid SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • William P. MulliganMichael J. CudzinovicThomas PassDavid SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • H01L21/00
    • H01L31/022441H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an IR reflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.
    • 使用比微电子电路处理便宜的处理技术容易地制造的太阳能电池。 在优选实施例中,打印技术用于选择性地形成用于蚀刻氧化硅和扩散掺杂剂以及形成向扩散区域的金属接触的掩模。 在优选实施例中,通过使用掩模和蚀刻技术,在晶片的表面中交替地形成p掺杂区域和n掺杂区域。 通过首先形成包含与硅接触的第一层(例如铝)并用作红外反射器的第二层,作为扩散阻挡的第二层这样的钛钨,首先形成种子层堆叠,从而对p区和n区进行金属接触,以及 第三层起镀层的作用。 然后将诸如铜的厚导电层电镀在种子层上,并且移除电镀线之间的种子层。 晶片的前表面优选通过蚀刻或机械磨蚀而被纹理化,其中IR反射层设置在纹理表面上。 可以在纹理化表面中提供场层,其组合效果是非常低的表面复合速度。
    • 6. 发明授权
    • Method of manufacturing solar cell
    • 制造太阳能电池的方法
    • US08399287B1
    • 2013-03-19
    • US13013628
    • 2011-01-25
    • William P. MulliganMichael J. CudzinovicThomas PassDavid D. SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • William P. MulliganMichael J. CudzinovicThomas PassDavid D. SmithNeil KaminarKeith McIntoshRichard M. Swanson
    • H01L21/00
    • H01L31/022441H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an IR reflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.
    • 使用比微电子电路处理便宜的处理技术容易地制造的太阳能电池。 在优选实施例中,打印技术用于选择性地形成用于蚀刻氧化硅和扩散掺杂剂以及形成向扩散区域的金属接触的掩模。 在优选实施例中,通过使用掩模和蚀刻技术,在晶片的表面中交替地形成p掺杂区域和n掺杂区域。 通过首先形成包含与硅接触的第一层(例如铝)并用作红外反射器的第二层,作为扩散阻挡的第二层这样的钛钨,首先形成种子层堆叠,从而对p区和n区进行金属接触,以及 第三层起镀层的作用。 然后将诸如铜的厚导电层电镀在种子层上,并且移除电镀线之间的种子层。 晶片的前表面优选通过蚀刻或机械磨蚀而被纹理化,其中IR反射层设置在纹理表面上。 可以在纹理化表面中提供场层,其组合效果是非常低的表面复合速度。