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    • 8. 发明申请
    • SWITCHING CORE LAYOUT
    • 切换核心布局
    • US20120086505A1
    • 2012-04-12
    • US12899390
    • 2010-10-06
    • Siraj Akhtar
    • Siraj Akhtar
    • H01L25/00
    • H03D7/1458H03D7/1433H03D7/1441H03D7/1483H03D7/165H03D2200/0019H03D2200/0082
    • Traditionally, mixers have been arranged symmetrically around the input signal, which has resulted in problems due to self-mixing or feed-through by the local oscillator signal. Here, however, the arrangement for a mixer has been changed to generally avoid self-mixing of the local oscillator signal. In particular, transistors in the switching core are merged according to the portion of the local oscillator signal received. This, in turn, results in the conductors, which carry the different portions of the local oscillator signal, being separated (or not having any crossings) so as to generally eliminate self-mixing or feed-through of the local oscillator signal. Complex IQ mixers realized using this arrangement benefit from improved sideband suppression and image rejection.
    • 传统上,混频器已经围绕输入信号对称布置,这导致了由于本机振荡器信号的自混合或馈通引起的问题。 然而,这里,混频器的布置已经改变,以便大体上避免本地振荡器信号的自混合。 特别地,切换核心中的晶体管根据所接收的本地振荡器信号的部分被合并。 这又导致承载本地振荡器信号的不同部分的导体被分离(或不具有任何交叉),以便通常消除本机振荡器信号的自混合或馈通。 使用这种安排实现的复杂IQ混音器可从改进的边带抑制和镜像抑制中获益。
    • 9. 发明授权
    • Neutralization capacitance implementation
    • 中和电容实现
    • US08471302B2
    • 2013-06-25
    • US12911488
    • 2010-10-25
    • Siraj Akhtar
    • Siraj Akhtar
    • H01L27/06
    • H01L27/0629H01L27/0808H01L27/0811H01L27/088
    • Neutralization capacitances are commonly employed to compensate for the Miller effect; however, at higher frequencies, the parasitic inductance introduced in the interconnect can affect the neutralization. Here, a layout has been provided where a MOS capacitor is merged with a complementary transistor. By having this merged device, the layout is compact and reduces interconnect area, which reduces the effects of parasitic inductance at higher frequencies (i.e., millimeter wave or terahertz). This layout can also be used to implement linearity enhancement schemes.
    • 中和电容通常用于补偿米勒效应; 然而,在较高的频率下,引入到互连中的寄生电感可以影响中和。 这里,已经提供了一种布置,其中MOS电容器与互补晶体管合并。 通过具有这种合并器件,布局紧凑并且减小了互连面积,这降低了在较高频率(即,毫米波或太赫兹)处的寄生电感的影响。 该布局也可用于实现线性增强方案。