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1. 发明授权

US5965976A Gas discharge lamps fabricated by micromachined transparent substrates 失效
标题翻译：由微加工透明基板制造的气体放电灯
公开(公告)号：US5965976A
公开(公告)日：1999-10-12
申请号：US994875
申请日：1997-12-19
申请人： Babar Ali Khan , David A. Cammack , Ronald D. Pinker , Jerry Kramer , Vivek Mehrotra
发明人： Babar Ali Khan , David A. Cammack , Ronald D. Pinker , Jerry Kramer , Vivek Mehrotra
IPC分类号： G02F1/13357 , H01J9/26 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01S3/03 , H01S3/097 , H01S3/0973 , H01J61/33
CPC分类号： G02F1/133617 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/261 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Lamps having ignition enhancing and hot restrike features, as well as single-sided electrodes, are disclosed.
摘要翻译：一种高压气体放电灯及其利用集成电路制造技术的方法。该灯由通过集成电路制造技术蚀刻空腔的耐热和耐压平面基板制造，以提供形成气体放电管的空腔。电极沉积在腔中。空腔填充有气体放电材料，例如汞蒸气，钠蒸气或金属卤化物。将基板粘合在一起，并且可以在基板中蚀刻通道，以便提供连接到电极的装置。公开了具有点火提高和热再起弧特征的灯以及单面电极。

2. 发明授权

US5955838A Gas discharge lamps and lasers fabricated by micromachining methodology 失效
标题翻译：气体放电灯和激光器通过微加工方法制造
公开(公告)号：US5955838A
公开(公告)日：1999-09-21
申请号：US856836
申请日：1997-05-15
申请人： Babar Ali Khan , David A. Cammack , Ronald D. Pinker
发明人： Babar Ali Khan , David A. Cammack , Ronald D. Pinker
IPC分类号： G02F1/13357 , H01J9/26 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01S3/03 , H01S3/097 , H01S3/0973 , H01J17/16
CPC分类号： H01J9/261 , G02F1/133617 , H01J17/492 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/00 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Lamps fabricated from three or more planar substrates are disclosed.
摘要翻译：一种高压气体放电灯及其利用集成电路制造技术的方法。该灯由通过集成电路制造技术蚀刻空腔的耐热和耐压平面基板制造，以提供形成气体放电管的空腔。电极沉积在腔中。空腔填充有气体放电材料，例如汞蒸气，钠蒸气或金属卤化物。将基板粘合在一起，并且可以在基板中蚀刻通道，以便提供连接到电极的装置。也可以通过这种技术制造无电极RF激活灯。公开了由三个或更多个平面基板制造的灯。

3. 发明授权

US5811935A Discharge lamp with T-shaped electrodes 失效
标题翻译：放电灯带T形电极
公开(公告)号：US5811935A
公开(公告)日：1998-09-22
申请号：US753546
申请日：1996-11-26
申请人： Ronald D. Pinker , Thomas F. McGee, III , David Alan Cammack , Babar Ali Khan
发明人： Ronald D. Pinker , Thomas F. McGee, III , David Alan Cammack , Babar Ali Khan
IPC分类号： H01J61/06 , H01J17/04
CPC分类号： H01J61/06
摘要： A discharge lamp includes a first and a second substrate (12, 14), a cavity disposed in the first substrate (12) or in a portion of the first and a second substrate (12, 14), a first and a second aligned electrode (270, 272) disposed between the first and a second substrate (12, 14) having respective ends extending into the cavity, wherein the first and the second aligned electrode (270, 272) are "T-shaped" when viewed in cross-section. The T-shaped electrodes provide mechanical support that minimizes bending and distortion in the horizontal and vertical directions. The discharge lamp may include a charge of mercury or an inert gas, and may further include a phosphor layer (80).
摘要翻译：放电灯包括第一和第二衬底（12,14），设置在第一衬底（12）中或在第一和第二衬底（12,14）的一部分中的空腔，第一和第二对齐电极（270,272），其设置在所述第一和第二基板（12,14）之间，所述第二基板（12,14）具有延伸到所述空腔中的相应端部，其中当横截面观察时，所述第一和第二对准电极（270,272）为“T” 部分。 T形电极提供了使水平和垂直方向上的弯曲和变形最小化的机械支撑。放电灯可以包括汞或惰性气体的电荷，并且还可以包括荧光体层（80）。

4. 发明授权

US5796209A Gas discharge lamps and lasers fabricated by michromachining 失效
标题翻译：气体放电灯和激光器通过重晶加工制造
公开(公告)号：US5796209A
公开(公告)日：1998-08-18
申请号：US484256
申请日：1994-10-27
申请人： Babar Ali Khan , David Alan Cammack , Ronald D. Pinker , Nikhil Ramesh Taskar
发明人： Babar Ali Khan , David Alan Cammack , Ronald D. Pinker , Nikhil Ramesh Taskar
IPC分类号： H01J9/24 , G02F1/13357 , H01J9/00 , H01J9/26 , H01J9/28 , H01J17/49 , H01J61/00 , H01J61/30 , H01J61/36 , H01J61/82 , H01J65/00 , H01J65/04 , H01S3/03 , H01S3/097 , H01S3/0973 , H01J1/62 , H01J9/12 , H01J17/16
CPC分类号： G02F1/133617 , H01J17/492 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/00 , H01J9/261 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.
摘要翻译：一种高压气体放电灯及其利用集成电路制造技术的方法。该灯由通过集成电路制造技术蚀刻空腔的耐热和耐压平面基板制造，以提供形成气体放电管的空腔。电极沉积在腔中。空腔填充有气体放电材料，例如汞蒸气，钠蒸气或金属卤化物。将基板粘合在一起，并且可以在基板中蚀刻通道，以便提供连接到电极的装置。也可以通过这种技术制造无电极RF激活灯。也可以通过该技术来制造微型激光器。

5. 发明授权

US5574327A Microlamp incorporating light collection and display functions 失效
标题翻译：微型灯采用灯光采集和显示功能
公开(公告)号：US5574327A
公开(公告)日：1996-11-12
申请号：US487613
申请日：1995-06-07
申请人： David A. Cammack , Ronald D. Pinker , Babar A. Khan
发明人： David A. Cammack , Ronald D. Pinker , Babar A. Khan
IPC分类号： G02F1/13357 , H01J9/00 , H01J9/02 , H01J9/26 , H01J17/49 , H01J21/10 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01S3/03 , H01S3/097 , H01S3/0973 , H01J17/16
CPC分类号： H01J9/00 , G02F1/133617 , H01J17/492 , H01J21/105 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/025 , H01J9/261 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A microlamp structure and method of making the same is set forth having light collection and light directing features. The microlamp structure is of a luminescent gas discharge type. The light collection structures may include types of reflectors while the light directing structures may include lens features. These features may be included singly or in combination and may be provided on the exterior of the microlamp structure or on the interior of the microlamp at a light forming cavity.
摘要翻译：提出了一种微型结构及其制造方法，其具有光收集和光导特征。微型荧光灯结构是发光气体放电型。光收集结构可以包括反射器的类型，而光引导结构可以包括透镜特征。这些特征可以单独地或组合地包括，并且可以设置在微型灯结构的外部上或者在光成型腔的微型灯的内部。

6. 发明授权

US5624293A Gas discharge lamps and lasers fabricated by micromachining methodology 失效
标题翻译：气体放电灯和激光器通过微加工方法制造
公开(公告)号：US5624293A
公开(公告)日：1997-04-29
申请号：US470903
申请日：1995-06-06
申请人： Babar A. Khan , David A. Cammack , Ronald D. Pinker , Nikhil R. Taskar
发明人： Babar A. Khan , David A. Cammack , Ronald D. Pinker , Nikhil R. Taskar
IPC分类号： H01J9/24 , G02F1/13357 , H01J9/00 , H01J9/26 , H01J9/28 , H01J17/49 , H01J61/00 , H01J61/30 , H01J61/36 , H01J61/82 , H01J65/00 , H01J65/04 , H01S3/03 , H01S3/097 , H01S3/0973 , H01S3/032
CPC分类号： G02F1/133617 , H01J17/492 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/00 , H01J9/261 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.
摘要翻译：一种高压气体放电灯及其利用集成电路制造技术的方法。该灯由通过集成电路制造技术蚀刻空腔的耐热和耐压平面基板制造，以提供形成气体放电管的空腔。电极沉积在腔中。空腔填充有气体放电材料，例如汞蒸气，钠蒸气或金属卤化物。将基板粘合在一起，并且可以在基板中蚀刻通道，以便提供连接到电极的装置。也可以通过这种技术制造无电极RF激活灯。也可以通过该技术来制造微型激光器。

7. 发明授权

US5808410A Flat panel light source for liquid crystal displays 失效
标题翻译：液晶显示器用平板光源
公开(公告)号：US5808410A
公开(公告)日：1998-09-15
申请号：US485894
申请日：1995-06-07
申请人： Ronald D. Pinker , Peter J. Janssen , Babar A. Khan , David A. Cammack
发明人： Ronald D. Pinker , Peter J. Janssen , Babar A. Khan , David A. Cammack
IPC分类号： G02F1/13357 , H01J9/00 , H01J9/02 , H01J9/26 , H01J17/49 , H01J21/10 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01S3/03 , H01S3/097 , H01S3/0973 , H01J1/62 , H01J5/16 , H01J61/40 , H01J63/04
CPC分类号： G02F1/133617 , H01J21/105 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/00 , H01J9/025 , H01J9/261 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A liquid crystal display is provided using a flat panel of microlamps being formed from gas discharge display structures and made by the method of making the same utilizing integrated circuit fabrication techniques. The flat panel of microlamps is formed into an array for providing light to individual pixels, or a small number of pixels, in a liquid crystal display. Such microlamp lighting can increase the illumination of LCDs.
摘要翻译：使用由气体放电显示结构形成的微型平板显示器提供液晶显示器，并且通过利用集成电路制造技术制造该液晶显示器的方法制成。微型液晶显示器的平板形成阵列，用于向液晶显示器中的各个像素或少量像素提供光。这种微光照明可以增加LCD的照明。

8. 发明授权

US5438343A Gas discharge displays and methodology for fabricating same by micromachining technology 失效
标题翻译：气体放电显示器和微加工技术制造方法
公开(公告)号：US5438343A
公开(公告)日：1995-08-01
申请号：US177089
申请日：1993-12-30
申请人： Babar A. Khan , David A. Cammack , Ronald D. Pinker , Jerry M. Kramer
发明人： Babar A. Khan , David A. Cammack , Ronald D. Pinker , Jerry M. Kramer
IPC分类号： H01J9/24 , H01J9/00 , H01J9/02 , H01J9/26 , H01J9/28 , H01J17/49 , H01J61/00 , H01J61/30 , H01J61/36 , H01J61/82 , H01J65/00 , H01J65/04 , H01S3/03 , H01S3/097 , H01S3/0973 , H01J61/33
CPC分类号： H01J9/261 , H01J17/492 , H01J61/00 , H01J61/30 , H01J61/82 , H01J65/00 , H01J9/00 , H01S3/03 , H01S3/097 , H01S3/0973
摘要： A gas discharge display and the method of making same utilizing integrated circuit fabrication techniques. The display is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide individual pixels. Orthogonal electrodes are deposited on the substrates and extend into the cavities. The cavities are filled with gas discharge materials, such as plasma, upon energization of the electrodes the individual cavities forming the pixels may be individually activated.
摘要翻译：一种气体放电显示器及其利用集成电路制造技术的方法。通过集成电路制造技术，通过耐热耐压的平面基板制造显示器，其中空腔被蚀刻，以便提供各个像素。正电极沉积在基底上并延伸到空腔中。空腔充满气体放电材料，例如等离子体，在电极通电时，形成像素的各个空腔可以被单独激活。

9. 发明授权

US06348959B1 Reflective LCD with dark borders 失效
标题翻译：具有黑色边框的反光LCD
公开(公告)号：US06348959B1
公开(公告)日：2002-02-19
申请号：US09217409
申请日：1998-12-21
申请人： George A. Melnick , Ronald D. Pinker
发明人： George A. Melnick , Ronald D. Pinker
IPC分类号： G02F11333
CPC分类号： G02F1/1339 , G02F1/133512
摘要： A projection display device is provided which includes a border structure comprising a dam around the active display area of the device which both shields any underlying drive circuitry from the incidental light by reflecting this light-while passively controlling its birefringence such that this region appears dark to the viewer when no drive voltages are being applied. Preferably, the dam is positioned between the glue seal and the active region, the thickness of the dam being such as to allow a thin layer of LC material on top of the dam for compensated LC effects and in such case, the border structure between the glue seal and the active region is also effective to keep the glue from seeping into the active region when the seal line is squeezed during assembly. With a high birefringence material and an external compensation foil, a high degree of light extinction is achieved over the border. Also, formation of the border on the active plate means that no critical alignment of the passive plate is needed.
摘要翻译：提供了一种投影显示装置，其包括边界结构，该边界结构包括围绕该装置的有源显示区域的坝，其两者均通过反射该光屏蔽任何底层的驱动电路与附带的光，同时被动地控制其双折射，使得该区域看起来较暗当没有驱动电压被施加时的观察者。优选地，坝被定位在胶水密封件和有源区域之间，坝的厚度允许在坝的顶部上的薄层的LC材料用于补偿的LC效应，并且在这种情况下，当密封线在组装过程中被挤压时，胶水密封和有源区域也有效地保持胶水渗透到活动区域中。使用高双折射材料和外部补偿箔，在边界上实现高度的光消光。此外，活动板上的边界的形成意味着不需要无源板的临界对准。

10. 发明授权

US5261999A Process for making strain-compensated bonded silicon-on-insulator material free of dislocations 失效
标题翻译：用于制造应变补偿的绝缘体上硅材料无位错的方法
公开(公告)号：US5261999A
公开(公告)日：1993-11-16
申请号：US697139
申请日：1991-05-08
申请人： Ronald D. Pinker , Emil Arnold , Helmut Baumgart
发明人： Ronald D. Pinker , Emil Arnold , Helmut Baumgart
IPC分类号： H01L21/20 , H01L21/762 , H01L21/00
CPC分类号： H01L21/76251 , H01L21/2007
摘要： A silicon-on-insulator material is formed by a method which includes the steps of forming a p-type silicon epitaxial layer, doped with boron and a higher concentration of germanium, on the surface of a semiconductor silicon substrate, forming an additional silicon epitaxial layer on the p-type silicon epitaxial layer, forming an oxide layer on the additional silicon epitaxial layer, forming an oxide layer on another semiconductor silicon substrate, forming a laminate by bringing into contact, at room temperature, the oxide layers thereby bonding together the substrates, etching the silicon substrate provided with the silicon epitaxial layers, with an isotropic etch to remove most of this silicon substrate, exposing the laminate to an anisotropic etch for this silicon substrate until the remainder of this silicon substrate is removed but only a part of the p-type epitaxial layer is removed and then exposing the resultant structure to an additional isotropic etch for the p-type epitaxial layer for a time sufficient only to remove only the remainder of the p-type epitaxial layer.
摘要翻译：通过一种方法形成绝缘体上硅材料，该方法包括以下步骤：在半导体硅衬底的表面上形成掺杂硼和较高浓度的锗的p型硅外延层，形成另外的硅外延在所述p型硅外延层上形成氧化物层，在另外的硅外延层上形成氧化物层，在另一半导体硅衬底上形成氧化物层，通过在室温下与氧化层接触从而形成层压体，衬底，蚀刻具有硅外延层的硅衬底，用各向同性蚀刻去除大部分该硅衬底，将该层压体暴露于该硅衬底的各向异性蚀刻，直到除去该硅衬底的其余部分，去除p型外延层，然后将所得结构暴露于用于p型外延的附加各向同性蚀刻层的时间足以仅去除p型外延层的剩余部分。

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