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    • 9. 发明申请
    • Pixel Structure and Display Device
    • 像素结构和显示设备
    • US20160253940A1
    • 2016-09-01
    • US14768664
    • 2015-04-14
    • BOE Technology Group Co., Ltd.
    • Qiangtao WANGHyun Sic CHOIYun Sik IM
    • G09G3/20
    • G09G3/2003G09G3/2074G09G2300/0443G09G2300/0452G09G2320/0626G09G2320/0666G09G2340/06
    • A pixel structure and a display device are provided. The pixel structure includes: a plurality of pixel units arranged in a matrix, each pixel unit including first to seventh subpixels arranged sequentially in a row direction, and the first subpixel, the second subpixel, the third subpixel and the fourth subpixel being different from one another in color. Each subpixel among the first to third subpixels has a same color as that of one subpixel among the fifth to the seventh pixels, respectively. The number of colors of the pixel structure becomes from original three to at least four, added subpixels are shared by pixels on both sides thereof, colors illustrated are more diversified by color modulation, and gamut of the display device is improved.
    • 提供像素结构和显示装置。 像素结构包括:以矩阵形式布置的多个像素单元,每个像素单元包括沿行方向依次布置的第一至第七子像素,第一子像素,第二子像素,第三子像素和第四子像素不同于一个 另一种颜色。 第一至第三子像素中的每个子像素分别具有与第五至第七像素中的一个子像素相同的颜色。 像素结构的颜色数量从原始的三个变为至少四个,添加的子像素由其两侧的像素共享,所示的颜色通过颜色调制更多样化,并且改善了显示装置的色域。
    • 10. 发明申请
    • OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
    • 氧化物薄膜晶体管及其制造方法,阵列基板和显示器件
    • US20150340504A1
    • 2015-11-26
    • US14652639
    • 2014-11-03
    • BOE TECHNOLOGY GROUP CO., LTD.
    • Hyun Sic CHOIYun Sik IM
    • H01L29/786H01L21/441H01L21/467H01L29/66
    • H01L27/1288H01L21/441H01L21/467H01L29/41733H01L29/66969H01L29/7869H01L29/78696
    • An oxide thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method comprises: forming a gate electrode (1), a gate insulating layer (4) and an oxide semiconductor thin film (10) sequentially on a substrate; forming a first photoresist (11a) above an active layer region of the oxide semiconductor thin film (10), such that a thickness of the first photoresist above a channel region is greater than a thickness of the first photoresist above a non-channel region; reserving the first photoresist (11a) above the channel region; forming a source-drain metal thin film and a second photoresist (11b) sequentially on a pattern of an active layer, removing a portion of the source-drain metal thin film and a portion of the second photoresist (11b), such that an edge of the first photoresist (11a) above the channel region is covered with the source-drain metal thin film; and obtaining patterns of a source electrode and a drain electrode. Upon preliminary patterns of the source electrode and the drain electrode are formed, the photoresist instead of a protective layer is used to protect the active layer, therefore shortening a length of a channel of the oxide thin film transistor.
    • 提供氧化物薄膜晶体管及其制造方法,阵列基板和显示装置。 该方法包括:在基板上依次形成栅电极(1),栅极绝缘层(4)和氧化物半导体薄膜(10) 在所述氧化物半导体薄膜(10)的有源层区域上形成第一光致抗蚀剂(11a),使得所述第一光致抗蚀剂在沟道区上方的厚度大于非沟道区上方的所述第一光致抗蚀剂的厚度; 在沟道区域上方保留第一光致抗蚀剂(11a); 在有源层的图案上依次形成源极 - 漏极金属薄膜和第二光致抗蚀剂(11b),去除源极 - 漏极金属薄膜的一部分和第二光致抗蚀剂(11b)的一部分,使得边缘 在沟道区上方的第一光致抗蚀剂(11a)被源极 - 漏极金属薄膜覆盖; 并获得源电极和漏电极的图案。 在形成源电极和漏电极的初步图案时,使用光致抗蚀剂代替保护层来保护有源层,从而缩短氧化物薄膜晶体管的沟道的长度。