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1. 发明申请

US20160172590A1 Organic Thin Film Transistor and Manufacturing Method Thereof, Array Substrate 有权
标题翻译：有机薄膜晶体管及其制造方法，阵列基板
公开(公告)号：US20160172590A1
公开(公告)日：2016-06-16
申请号：US14799739
申请日：2015-07-15
申请人： BOE Technology Group Co., Ltd.
发明人： Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu , Honhang Fong
IPC分类号： H01L51/00 , H01L51/05
CPC分类号： H01L51/0015 , H01L29/786 , H01L51/002 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/105 , H01L51/107
摘要： An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.
摘要翻译：提供有机薄膜晶体管，其制造方法和阵列基板。有机薄膜晶体管的制造方法包括：形成有机半导体层; 部分地遮蔽有机半导体层，使得在有机半导体层上形成遮蔽区域和未保护区域，所述遮蔽区域对应于需要形成有机薄膜晶体管的有源层的区域; 并且掺杂有机半导体层，使得与掩蔽区域对应的有机半导体层不被掺杂，并且掺杂与未保护区域对应的有机半导体层。

2. 发明授权

US09728723B2 Organic thin film transistor and manufacturing method thereof, array substrate 有权
公开(公告)号：US09728723B2
公开(公告)日：2017-08-08
申请号：US14799739
申请日：2015-07-15
申请人： BOE Technology Group Co., Ltd.
发明人： Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu , Honhang Fong
IPC分类号： H01L51/00 , H01L51/05 , H01L29/786
CPC分类号： H01L51/0015 , H01L29/786 , H01L51/002 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/105 , H01L51/107
摘要： An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

3. 发明授权

US10290822B2 Thin film transistor including recessed gate insulation layer and its manufacturing method, array substrate, and display device 有权
公开(公告)号：US10290822B2
公开(公告)日：2019-05-14
申请号：US14769670
申请日：2014-11-07
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Honhang Fong , Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu
IPC分类号： H01L29/08 , H01L51/05 , H01L29/786 , H01L27/12 , H01L27/28 , H01L29/66 , H01L51/10
摘要： A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.

4. 发明申请

US20170294584A1 Organic Thin Film Transistor and Manufacturing Method Thereof, Array Substrate 审中-公开
公开(公告)号：US20170294584A1
公开(公告)日：2017-10-12
申请号：US15634748
申请日：2017-06-27
申请人： BOE Technology Group Co., Ltd.
发明人： Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu , Honhang Fong
IPC分类号： H01L51/00 , H01L51/10 , H01L51/05
CPC分类号： H01L51/0015 , H01L29/786 , H01L51/002 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/105 , H01L51/107
摘要： An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

5. 发明授权

US10050200B2 Organic thin film transistor and manufacturing method thereof, array substrate 有权
公开(公告)号：US10050200B2
公开(公告)日：2018-08-14
申请号：US15634748
申请日：2017-06-27
申请人： BOE Technology Group Co., Ltd.
发明人： Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu , Honhang Fong
IPC分类号： H01L51/00 , H01L51/05 , H01L51/10
摘要： An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

6. 发明授权

US09685621B2 Thin film transistor, its manufacturing method, array substrate and display device 有权
公开(公告)号：US09685621B2
公开(公告)日：2017-06-20
申请号：US14801309
申请日：2015-07-16
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu , Honhang Fong
IPC分类号： H01L21/00 , H01L51/05 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0018 , H01L51/0541 , H01L51/0562
摘要： The present disclosure provides a thin film transistor (TFT), its manufacturing method, an array substrate and a display device. The method for manufacturing the TFT includes steps of forming patterns of a gate electrode, a source electrode and a drain electrode on a base substrate; and forming a pattern of an active layer and a pattern of a passivation layer covering the active layer by a single patterning process. The passivation layer is made of a negative or positive photoresist, and the active layer is insulated from the gate electrode and electrically connected to the source electrode and the drain electrode.

7. 发明授权

US09620729B2 Organic thin film transistor and method of manufacturing the same, array substrate and display device 有权
公开(公告)号：US09620729B2
公开(公告)日：2017-04-11
申请号：US14769313
申请日：2014-11-14
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Honhang Fong , Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu
IPC分类号： H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L51/105 , H01L51/0018 , H01L51/0529 , H01L51/0545 , H01L51/055 , H01L51/107
摘要： An organic thin film transistor and a method of manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor including: a source electrode (4), a drain electrode (5), an organic semiconductor layer (6) disposed on the source electrode (4) and drain electrode (5), and a modified layer (7); the modified layer (7) is disposed at a position below an organic semiconductor layer (6) and corresponding to the source electrode (4) and the drain electrode (5), covers the source electrode (4) and the drain electrode (5), and is configured to change a contact angle on both the source electrode (4) and the drain electrode (5). The thin film transistor avoids the problems of poor formation effects and easy disconnection of the organic semiconductor layer (6) because of the large contact angle on electrode layers, and therefore reduces production costs.

8. 发明授权

US09583722B2 Organic thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device 有权
标题翻译：有机薄膜晶体管及其制备方法，阵列基片及其制备方法以及显示装置
公开(公告)号：US09583722B2
公开(公告)日：2017-02-28
申请号：US14764453
申请日：2014-12-04
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Honhang Fong , Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu
IPC分类号： H01L27/32 , H01L51/05 , H01L27/28 , H01L51/00 , H01L51/10
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3274 , H01L51/0018 , H01L51/052 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode (12a) and a drain electrode (12b), and forming an organic semiconductor active layer (13) in contact with the source electrode (12a) and the drain electrode (12b); and forming an organic insulating thin film (140) on a substrate (10) where the source-drain metal layer and the organic semiconductor active layer (13) have been formed, thinning the organic insulating thin film (140) and curing the thinned organic insulating thin film (140), or curing the organic insulating thin film (140) and thinning the cured organic insulating thin film (140), to form an organic insulating layer (14). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.
摘要翻译：一种有机薄膜晶体管及其制备方法，阵列基板及其制备方法和显示装置; 并且有机薄膜晶体管的制备方法包括：形成包括源电极（12a）和漏电极（12b）的源极 - 漏极金属层，并形成与源极接触的有机半导体活性层（13）（12a）和漏电极（12b）; 在所述源极 - 漏极金属层和所述有机半导体有源层已经形成的衬底上形成有机绝缘薄膜，使所述有机绝缘薄膜变薄，并将所述有机绝缘薄膜固化）绝缘薄膜（140），或固化有机绝缘薄膜（140），使固化的有机绝缘薄膜（140）变薄，形成有机绝缘层（14）。该方法可用于形成薄而均匀的有机绝缘层，因此减少了形成通孔的技术难点。

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