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    • 2. 发明申请
    • HORIZONTAL CENTRIFUGAL SEPARATOR
    • 水平离心分离器
    • US20100273628A1
    • 2010-10-28
    • US12746353
    • 2007-12-07
    • Atsushi OnoderaKeishiro Yamazaki
    • Atsushi OnoderaKeishiro Yamazaki
    • B04B15/08
    • B04B1/20B04B3/04B04B7/00B04B9/12
    • A horizontal centrifugal separator is provided in which the hermeticity of the casing can be improved by using sealing means having a simple structure.The horizontal centrifugal separator is configured such that a groove formed along a joint surface between an upper casing and a lower casing constituting the casing is outwardly bent near an opening of the casing, and that an elastic sealing member is disposed in the groove and an end portion thereof abuts against a sealing surface provided on a ring member which is provided so as to surround the outer circumference of the opening of the casing and is pressed against the casing. In this case, surface sealing is constituted by the end portion of the elastic sealing member and the sealing surface of the ring member. In this manner, the hermeticity can be improved without using a sealing member having a complicated structure.
    • 提供了一种卧式离心分离机,通过使用具有简单结构的密封装置,能够改善套管的气密性。 水平离心分离器构成为使得沿着构成壳体的上壳体和下壳体之间的接合面形成的槽在壳体的开口附近向外弯曲,并且弹性密封构件设置在凹槽中,端部 其部分与设置在围绕壳体的开口的外周并且被压靠在壳体上的环形构件上的密封表面抵接。 在这种情况下,表面密封由弹性密封构件的端部和环构件的密封面构成。 以这种方式,可以在不使用具有复杂结构的密封构件的情况下改善气密性。
    • 7. 发明授权
    • Thin film transistor array and displaying apparatus
    • 薄膜晶体管阵列和显示装置
    • US08779434B2
    • 2014-07-15
    • US12246134
    • 2008-10-06
    • Takao InoueTakumi YamagaAtsushi Onodera
    • Takao InoueTakumi YamagaAtsushi Onodera
    • H01L27/14H01L29/417
    • H01L29/41733H01L27/124H01L29/42384
    • A thin film transistor array is disclosed. The thin film transistor array includes plural gate electrodes formed on an insulation substrate, plural source electrodes formed above or under the gate electrodes via a gate insulation film so that the source electrodes cross the gate electrodes in a planar view, plural drain electrodes formed at corresponding positions surrounded by the gate electrodes and the source electrodes in a planar view in the same layer as that of the source electrodes, semiconductor layers formed via the gate insulation film to face the gate electrodes for forming corresponding channel regions between the source electrodes and the drain electrodes. The plural gate electrodes are linearly formed, and the channel regions are disposed to face the gate electrodes.
    • 公开了一种薄膜晶体管阵列。 薄膜晶体管阵列包括形成在绝缘基板上的多个栅电极,通过栅极绝缘膜形成在栅极电极上方或下方的多个源电极,使得源电极在平面图中与栅电极交叉,形成在相应的 位于与源极电极相同的平面图中由栅极电极和源极电极围绕的位置,经由栅极绝缘膜形成的面向栅电极的半导体层,用于在源电极和漏极之间形成相应的沟道区域 电极。 多个栅电极被线性地形成,并且沟道区被设置为面对栅电极。
    • 10. 发明授权
    • Laminated structure and image display device
    • 层压结构和图像显示装置
    • US08263969B2
    • 2012-09-11
    • US12428645
    • 2009-04-23
    • Koei SuzukiTakanori TanoAtsushi Onodera
    • Koei SuzukiTakanori TanoAtsushi Onodera
    • H01L51/54
    • H01L51/0023G02F1/1339G02F2202/28G02F2202/36H01L51/0022H01L51/0545H01L51/525
    • A laminated structure includes a wettability variable layer formed on a substrate, including a material whose critical surface tension varies by receiving energy so that high and low surface energy regions are formed; a conductive layer formed in one of the high surface energy regions; and an insulating layer formed in such a manner as to cover the conductive layer, wherein another one of the high surface energy regions is formed in such a manner as to surround a periphery of a circuit formation region in which a plurality of the conductive layers are formed; and the insulating layer is formed in such a manner as to also cover the another one of the high surface energy regions so that an adhesive guard ring region is formed between the wettability variable layer and the insulating layer.
    • 叠层结构包括形成在基板上的润湿性变化层,其包括其临界表面张力通过接收能量而变化的材料,从而形成高低表面能区域; 形成在所述高表面能区域之一中的导电层; 以及以覆盖导电层的方式形成的绝缘层,其中形成高表面能区域中的另一个以包围多个导电层的电路形成区域的周围的方式形成 形成 并且绝缘层形成为也覆盖另一个高表面能区域,使得在润湿性变化层和绝缘层之间形成粘合剂保护环区域。