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1. 发明授权

US08432227B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US08432227B2
公开(公告)日：2013-04-30
申请号：US13301955
申请日：2011-11-22
申请人： Atsushi Okamura , Kazuya Yamamoto , Takayuki Matsuzuka
发明人： Atsushi Okamura , Kazuya Yamamoto , Takayuki Matsuzuka
IPC分类号： H03F3/04
CPC分类号： H03F3/211 , H03F1/0261 , H03F1/301 , H03F1/302 , H03F1/32 , H03F2200/18 , H03F2200/405 , H03F2200/93
摘要： A power amplifier includes: an amplifying element having a base into which input signals are inputted, a collector to which a collector voltage is applied, and an emitter; and a bias circuit supplying a bias current to the base of the amplifying element. The bias circuit includes a bias current lowering circuit which lowers the bias current when the collector voltage is lower than a prescribed threshold value.
摘要翻译：功率放大器包括：具有输入信号的基极的放大元件，施加集电极电压的集电极和发射极; 以及向放大元件的基极提供偏置电流的偏置电路。偏置电路包括偏置电流降低电路，当集电极电压低于规定的阈值时，降低偏置电流。

2. 发明申请

US20110018639A1 POWER AMPLIFIER BIAS CIRCUIT 有权
标题翻译：功率放大器偏置电路
公开(公告)号：US20110018639A1
公开(公告)日：2011-01-27
申请号：US12712234
申请日：2010-02-25
申请人： Takayuki Matsuzuka , Kazuya Yamamoto , Atsushi Okamura
发明人： Takayuki Matsuzuka , Kazuya Yamamoto , Atsushi Okamura
IPC分类号： H03F3/04
CPC分类号： H03F1/0261 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/451 , H03F2200/555
摘要： A power amplifier and bias circuit includes a combination circuit in which a voltage drive bias circuit and a current drive bias circuit are connected in a parallel relationship with each other. The power amplifier bias circuit also includes an idle current control circuit which uses the collector voltage of amplifier transistors. When the collector voltage of the amplifier transistors is lower than the threshold voltage of a first transistor (approximately 1.3 V), the first transistor is turned off. At that time, since the reference voltage (2.4-2.5 V) is higher than the voltage for turning on both a second transistor and a diode (namely, approximately 1.3 V plus 0.7 V), a current flows and the first transistor turns on. As a result, a current is drawn from the bases of the amplifier transistors to GND through two resistances, so that the idle currents of the amplifier transistors decrease.
摘要翻译：功率放大器和偏置电路包括其中电压驱动偏置电路和电流驱动偏置电路彼此并联连接的组合电路。功率放大器偏置电路还包括使用放大器晶体管的集电极电压的空闲电流控制电路。当放大器晶体管的集电极电压低于第一晶体管（约1.3V）的阈值电压时，第一晶体管截止。此时，由于参考电压（2.4-2.5V）高于用于接通第二晶体管和二极管的电压（即，大约1.3V加上0.7V），所以电流流过，第一晶体管导通。结果，通过两个电阻将电流从放大器晶体管的基极拉到GND，使得放大器晶体管的空闲电流减小。

3. 发明申请

US20120306579A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20120306579A1
公开(公告)日：2012-12-06
申请号：US13301955
申请日：2011-11-22
申请人： Atsushi OKAMURA , Kazuya Yamamoto , Takayuki Matsuzuka
发明人： Atsushi OKAMURA , Kazuya Yamamoto , Takayuki Matsuzuka
IPC分类号： H03F3/04
CPC分类号： H03F3/211 , H03F1/0261 , H03F1/301 , H03F1/302 , H03F1/32 , H03F2200/18 , H03F2200/405 , H03F2200/93
摘要： A power amplifier includes: an amplifying element having a base into which input signals are inputted, a collector to which a collector voltage is applied, and an emitter; and a bias circuit supplying a bias current to the base of the amplifying element. The bias circuit includes a bias current lowering circuit which lowers the bias current when the collector voltage is lower than a prescribed threshold value.
摘要翻译：功率放大器包括：具有输入信号的基极的放大元件，施加集电极电压的集电极和发射极; 以及向放大元件的基极提供偏置电流的偏置电路。偏置电路包括偏置电流降低电路，当集电极电压低于规定的阈值时，降低偏置电流。

4. 发明授权

US07936219B2 Power amplifier bias circuit 有权
标题翻译：功率放大器偏置电路
公开(公告)号：US07936219B2
公开(公告)日：2011-05-03
申请号：US12712234
申请日：2010-02-25
申请人： Takayuki Matsuzuka , Kazuya Yamamoto , Atsushi Okamura
发明人： Takayuki Matsuzuka , Kazuya Yamamoto , Atsushi Okamura
IPC分类号： H03F3/04
CPC分类号： H03F1/0261 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/451 , H03F2200/555
摘要： A power amplifier and bias circuit includes a combination circuit in which a voltage drive bias circuit and a current drive bias circuit are connected in a parallel relationship with each other. The power amplifier bias circuit also includes an idle current control circuit which uses the collector voltage of amplifier transistors. When the collector voltage of the amplifier transistors is lower than the threshold voltage of a first transistor (approximately 1.3 V), the first transistor is turned off. At that time, since the reference voltage (2.4-2.5 V) is higher than the voltage for turning on both a second transistor and a diode (namely, approximately 1.3 V plus 0.7 V), a current flows and the first transistor turns on. As a result, a current is drawn from the bases of the amplifier transistors to GND through two resistances, so that the idle currents of the amplifier transistors decrease.
摘要翻译：功率放大器和偏置电路包括其中电压驱动偏置电路和电流驱动偏置电路彼此并联连接的组合电路。功率放大器偏置电路还包括使用放大器晶体管的集电极电压的空闲电流控制电路。当放大器晶体管的集电极电压低于第一晶体管（约1.3V）的阈值电压时，第一晶体管截止。此时，由于参考电压（2.4-2.5V）高于用于接通第二晶体管和二极管的电压（即，大约1.3V加上0.7V），所以电流流过，第一晶体管导通。结果，通过两个电阻将电流从放大器晶体管的基极拉到GND，使得放大器晶体管的空闲电流减小。

5. 发明授权

US08138836B2 Emitter-follower type bias circuit 有权
标题翻译：发射体跟随器型偏置电路
公开(公告)号：US08138836B2
公开(公告)日：2012-03-20
申请号：US12875168
申请日：2010-09-03
申请人： Takayuki Matsuzuka , Kazuya Yamamoto , Tomoyuki Asada
发明人： Takayuki Matsuzuka , Kazuya Yamamoto , Tomoyuki Asada
IPC分类号： H03F3/16
CPC分类号： H03F3/16
摘要： An emitter-follower bias circuit supplying a bias voltage to the base of an amplification transistor includes: a depletion mode FET boosting a reference voltage; and an emitter-follower circuit generating the bias voltage in response to the reference voltage boosted by the depletion mode FET.
摘要翻译：向放大晶体管的基极提供偏置电压的射极跟随器偏置电路包括：耗尽型FET，提高参考电压; 以及射极跟随器电路，其响应于由耗尽型FET升压的参考电压而产生偏置电压。

6. 发明授权

US07705658B2 Wave detector circuit 有权
标题翻译：波检测电路
公开(公告)号：US07705658B2
公开(公告)日：2010-04-27
申请号：US11748601
申请日：2007-05-15
申请人： Kazuya Yamamoto , Miyo Miyashita , Takayuki Matsuzuka
发明人： Kazuya Yamamoto , Miyo Miyashita , Takayuki Matsuzuka
IPC分类号： H03K17/60
CPC分类号： H03F3/19 , G01R21/12 , H03F3/211 , H03F2200/393 , H03F2200/408 , H03F2200/451 , H03F2200/471
摘要： A wave detector circuit includes: a first transistor having its base and collector connected together, the first transistor receiving an AC signal and a reference voltage at its base and collector; a second transistor having its base connected to the base of the first transistor through a resistor, the second transistor outputting a detected voltage at its collector; and a diode-connected temperature compensation transistor connected between ground potential and the base and the collector of the first transistor.
摘要翻译：波检测器电路包括：第一晶体管，其基极和集电极连接在一起，第一晶体管在其基极和集电极处接收AC信号和参考电压; 第二晶体管，其基极通过电阻连接到第一晶体管的基极，第二晶体管在其集电极处输出检测电压; 以及连接在地电位与第一晶体管的基极和集电极之间的二极管连接的温度补偿晶体管。

7. 发明申请

US20120062321A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20120062321A1
公开(公告)日：2012-03-15
申请号：US13079046
申请日：2011-04-04
申请人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
发明人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
IPC分类号： H03F3/20
CPC分类号： H03F3/195 , H03F1/0277 , H03F3/189 , H03F3/245 , H03F3/72 , H03F2200/27 , H03F2200/411 , H03F2203/7206 , H03F2203/7236 , H03G1/0088
摘要： A power amplifier comprises: an amplifying transistor for amplifying an input signal; a reference voltage generating circuit which generates a reference voltage; a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and a booster elevating an enable voltage input from outside and outputting the enable voltage. The reference voltage generating circuit is turned ON/OFF in correspondence with an output voltage of the booster. The booster includes: an enable terminal to which the enable voltage is applied; a power source terminal connected to a power source; a transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded; and a FET resistor connected between the first electrode of the transistor and the power source terminal. A gate electrode of the FET resistor is open.
摘要翻译：功率放大器包括：放大晶体管，用于放大输入信号; 产生参考电压的基准电压产生电路; 偏置电路，基于所述参考电压产生偏置电压，并将所述偏置电压提供给所述放大晶体管; 并且升压器提升从外部输入的使能电压并输出使能电压。参考电压产生电路对应于升压器的输出电压而导通/截止。升压器包括：施加使能电压的使能端子; 连接到电源的电源端子; 具有连接到使能端子的控制电极的晶体管，连接到电源端子的第一电极和接地的第二电极; 以及连接在晶体管的第一电极和电源端子之间的FET电阻器。 FET电阻的栅电极断开。

8. 发明申请

US20110187459A1 EMITTER-FOLLOWER TYPE BIAS CIRCUIT 有权
标题翻译：发射器 - 型号偏置电路
公开(公告)号：US20110187459A1
公开(公告)日：2011-08-04
申请号：US12875168
申请日：2010-09-03
申请人： Takayuki Matsuzuka , Kazuya Yamamoto , Tomoyuki Asada
发明人： Takayuki Matsuzuka , Kazuya Yamamoto , Tomoyuki Asada
IPC分类号： H03F3/16
CPC分类号： H03F3/16
摘要： An emitter-follower bias circuit supplying a bias voltage to the base of an amplification transistor includes: a depletion mode FET boosting a reference voltage; and an emitter-follower circuit generating the bias voltage in response to the reference voltage boosted by the depletion mode FET.
摘要翻译：向放大晶体管的基极提供偏置电压的射极跟随器偏置电路包括：耗尽型FET，提高参考电压; 以及射极跟随器电路，其响应于由耗尽型FET升压的参考电压而产生偏置电压。

9. 发明授权

US08217722B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US08217722B2
公开(公告)日：2012-07-10
申请号：US13079046
申请日：2011-04-04
申请人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
发明人： Kazuya Yamamoto , Miyo Miyashita , Satoshi Suzuki , Takayuki Matsuzuka
IPC分类号： H03F3/20
CPC分类号： H03F3/195 , H03F1/0277 , H03F3/189 , H03F3/245 , H03F3/72 , H03F2200/27 , H03F2200/411 , H03F2203/7206 , H03F2203/7236 , H03G1/0088
摘要： A power amplifier comprises: an amplifying transistor for amplifying an input signal; a reference voltage generating circuit which generates a reference voltage; a bias circuit generating a bias voltage based on the reference voltage and supplying the bias voltage to the amplifying transistor; and a booster elevating an enable voltage input from outside and outputting the enable voltage. The reference voltage generating circuit is turned ON/OFF in correspondence with an output voltage of the booster. The booster includes: an enable terminal to which the enable voltage is applied; a power source terminal connected to a power source; a transistor having a control electrode connected to the enable terminal, a first electrode connected to the power source terminal, and a second electrode that is grounded; and a FET resistor connected between the first electrode of the transistor and the power source terminal. A gate electrode of the FET resistor is open.
摘要翻译：功率放大器包括：放大晶体管，用于放大输入信号; 产生参考电压的基准电压产生电路; 偏置电路，基于所述参考电压产生偏置电压，并将所述偏置电压提供给所述放大晶体管; 并且升压器提升从外部输入的使能电压并输出使能电压。基准电压发生电路与增压器的输出电压对应地接通/断开。升压器包括：施加使能电压的使能端子; 连接到电源的电源端子; 具有连接到使能端子的控制电极的晶体管，连接到电源端子的第一电极和接地的第二电极; 以及连接在晶体管的第一电极和电源端子之间的FET电阻器。 FET电阻的栅电极断开。

10. 发明申请

US20120154055A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20120154055A1
公开(公告)日：2012-06-21
申请号：US13195066
申请日：2011-08-01
申请人： Kazuya Yamamoto , Miyo Miyashita , Takayuki Matsuzuka , Kenji Mukai
发明人： Kazuya Yamamoto , Miyo Miyashita , Takayuki Matsuzuka , Kenji Mukai
IPC分类号： H03F3/68 , H03F3/04
CPC分类号： H03F3/191 , H03F1/56 , H03F3/193 , H03F2200/15 , H03F2200/18 , H03F2200/211 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03G1/007
摘要： A power amplifier includes a first amplifier unit, a second amplifier unit, and an attenuator. The second amplifier receives a signal from the first amplifier unit and amplifies the signal. The attenuator is provided between the first and second amplifier units. The attenuator has arms, including at least one parallel arm and at least one series arm, and has switches connected to the arms to switch the electrical connection states of the arms with respect to the first and second amplifier units. The at least one parallel arm and the at least one series arm are alternately arranged, in the order named, as viewed in the direction from the first amplifier unit to the second amplifier unit.
摘要翻译：功率放大器包括第一放大器单元，第二放大器单元和衰减器。第二放大器从第一放大器单元接收信号并放大信号。衰减器设置在第一和第二放大器单元之间。衰减器具有包括至少一个并联臂和至少一个串联臂的臂，并且具有连接到臂的开关，以相对于第一和第二放大器单元切换臂的电连接状态。按照从第一放大器单元到第二放大器单元的方向观察，所述至少一个并联臂和至少一个串联臂交替排列。

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