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1. 发明申请

US20080315204A1 Thin Film Transistor, and Active Matrix Substrate and Display Device Provided with Such Thin Film Transistor 审中-公开
标题翻译：薄膜晶体管，以及提供这种薄膜晶体管的有源矩阵基板和显示装置
公开(公告)号：US20080315204A1
公开(公告)日：2008-12-25
申请号：US12162629
申请日：2007-01-23
申请人： Yoshihiro Okada , Wataru Nakamura , Atsushi Ban
发明人： Yoshihiro Okada , Wataru Nakamura , Atsushi Ban
IPC分类号： H01L27/12 , H01L29/04
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1248 , H01L29/41733 , H01L29/78609 , H01L29/78696
摘要： Improves the electric current driving capability of a thin film transistor without the yield being decreased due to a defective leak between a source electrode/drain electrode and a gate electrode or due to a decrease in an off-characteristic.A thin film transistor according to the present invention includes a gate electrode; an insulating film covering the gate electrode; a semiconductor layer provided on the insulating film; and a source electrode and a drain electrode provided on the insulating film and the semiconductor layer. The insulating film is a multiple layer insulating film including a first insulating layer and a second insulating layer provided on the first insulating layer. The multiple layer insulating film has a low stacking region excluding the first insulating layer and a high stacking region in which the first insulating layer and the second insulating layer are stacked. The first insulating layer is provided so as to cover at least an edge of the gate electrode. The semiconductor layer is provided on both the low stacking region and the high stacking region of the multiple layer insulating film. The semiconductor layer and the low stacking region are arranged such that a path of a current flowing between the source electrode and the drain electrode necessarily passes a part of the semiconductor layer which is located above the low stacking region.
摘要翻译：提高薄膜晶体管的电流驱动能力，而不会由于源电极/漏电极和栅电极之间的缺陷而导致产量下降，或者由于断开特性的降低而导致的电流驱动能力降低。根据本发明的薄膜晶体管包括栅电极; 覆盖栅电极的绝缘膜; 设置在绝缘膜上的半导体层; 以及设置在绝缘膜和半导体层上的源电极和漏电极。绝缘膜是包括设置在第一绝缘层上的第一绝缘层和第二绝缘层的多层绝缘膜。多层绝缘膜具有除了第一绝缘层之外的低层叠区域和堆叠第一绝缘层和第二绝缘层的高堆积区域。第一绝缘层设置成覆盖栅电极的至少边缘。半导体层设置在多层绝缘膜的低堆叠区域和高堆叠区域两者上。半导体层和低堆叠区域被布置成使得在源电极和漏电极之间流动的电流的路径必然通过位于低堆叠区域之上的半导体层的一部分。

2. 发明授权

US06724358B2 Active matrix type display apparatus and method for driving the same 有权
标题翻译：有源矩阵型显示装置及其驱动方法
公开(公告)号：US06724358B2
公开(公告)日：2004-04-20
申请号：US09809644
申请日：2001-03-15
申请人： Atsushi Ban , Yoshihiro Okada , Wataru Nakamura
发明人： Atsushi Ban , Yoshihiro Okada , Wataru Nakamura
IPC分类号： G09G336
CPC分类号： G09G3/3655 , G09G3/3614 , G09G3/3659 , G09G2300/0876 , G09G2320/0261
摘要： Pseudo-impulse display for reducing after-images during display of moving images in an active matrix type display apparatus. Liquid crystal capacitors are formed at intersections of signal lines and scanning lines to display images. Auxiliary capacitors are provided for keeping a potential difference across the liquid crystal capacitors during display. One of the two electrodes of the auxiliary capacitors is connected to a switching element together with a pixel electrode. After the liquid crystal capacitor and the auxiliary capacitor have been charged with a video signal on the signal lines while the switching element is selectively put into the conducting state with the scanning lines, and after a predetermined time has passed, an auxiliary capacitor driver applies a signal to the other electrode of the auxiliary capacitor, such that the display luminance due to the liquid crystal capacitor is reduced.
摘要翻译：用于在有源矩阵型显示装置中显示运动图像期间减少后图像的伪脉冲显示。在信号线和扫描线的交点处形成液晶电容器以显示图像。提供辅助电容器用于在显示期间保持液晶电容器两端的电位差。辅助电容器的两个电极之一与像素电极一起连接到开关元件。在用扫描线选择性地将开关元件选择性地置于导通状态之后，在信号线上充满了液晶电容器和辅助电容器之间的视频信号之后，辅助电容器驱动器信号到辅助电容器的另一个电极，使得由于液晶电容器引起的显示亮度降低。

3. 发明申请

US20070268438A1 Active Matrix Substrate and Display Unit Provided with It 有权
标题翻译：主动矩阵基板和显示单元
公开(公告)号：US20070268438A1
公开(公告)日：2007-11-22
申请号：US11574087
申请日：2005-08-23
申请人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
发明人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227 , G02F1/136286
摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.
摘要翻译：有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压堆栈区域。有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

4. 发明授权

US08405808B2 Active matrix substrate and display unit provided with it 有权
标题翻译：提供有源矩阵基板和显示单元
公开(公告)号：US08405808B2
公开(公告)日：2013-03-26
申请号：US12946000
申请日：2010-11-15
申请人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
发明人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227 , G02F1/136286
摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.
摘要翻译：有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压堆栈区域。有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

5. 发明授权

US07864281B2 Active matrix substrate and display unit provided with it 有权
标题翻译：提供有源矩阵基板和显示单元
公开(公告)号：US07864281B2
公开(公告)日：2011-01-04
申请号：US11574087
申请日：2005-08-23
申请人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
发明人： Wataru Nakamura , Atsushi Ban , Shoji Okazaki , Hiromitsu Katsui , Yoshihiro Okada
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227 , G02F1/136286
摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.
摘要翻译：有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压堆栈区域。有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

6. 发明申请

US20100259715A1 ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND LIQUID CRYSTAL DISPLAY APPARATUS 有权
标题翻译：活性基质底物，其制造方法和液晶显示装置
公开(公告)号：US20100259715A1
公开(公告)日：2010-10-14
申请号：US12671801
申请日：2008-08-04
申请人： Tetsunori Tanaka , Atsushi Ban , Tohru Senoo , Wataru Nakamura , Yukimine Shimada
发明人： Tetsunori Tanaka , Atsushi Ban , Tohru Senoo , Wataru Nakamura , Yukimine Shimada
IPC分类号： G02F1/1343 , H01L21/28
CPC分类号： G02F1/1345 , H01L27/1244 , H01L27/1288
摘要： An active matrix substrate (30) of the present invention includes a substrate, a gate line (50) formed on the substrate, and an interlayer insulating layer (90) for insulating a layer formed on the gate line (50) from the gate line (50). In a region of the substrate, the interlayer insulating layer (90) is not provided on an upper surface of the gate line (50), and therefore, the upper surface is exposed. On the other hand, the insulating layer (90) is provided on the substrate so as to have contact with at least an edge face of the gate line (50) which edge face is on an extension of a longitudinal direction of the gate line (50).
摘要翻译：本发明的有源矩阵基板（30）包括基板，形成在基板上的栅极线（50），以及用于使形成在栅极线（50）上的与栅极线（50）形成的层绝缘的层间绝缘层（90）（50）。在基板的区域中，层间绝缘层（90）不设置在栅极线（50）的上表面上，因此露出上表面。另一方面，绝缘层（90）设置在基板上，以便与栅极线（50）的至少边缘面接触，该边缘面在栅极线的纵向方向上的延伸部 50）。

7. 发明授权

US08711296B2 Active matrix substrate, method for manufacturing same, and liquid crystal display apparatus 有权
标题翻译：有源矩阵基板及其制造方法以及液晶显示装置
公开(公告)号：US08711296B2
公开(公告)日：2014-04-29
申请号：US12671801
申请日：2008-08-04
申请人： Tetsunori Tanaka , Atsushi Ban , Tohru Senoo , Wataru Nakamura , Yukimine Shimada
发明人： Tetsunori Tanaka , Atsushi Ban , Tohru Senoo , Wataru Nakamura , Yukimine Shimada
IPC分类号： G02F1/136
CPC分类号： G02F1/1345 , H01L27/1244 , H01L27/1288
摘要： An active matrix substrate (30) of the present invention includes a substrate, a gate line (50) formed on the substrate, and an interlayer insulating layer (90) for insulating a layer formed on the gate line (50) from the gate line (50). In a region of the substrate, the interlayer insulating layer (90) is not provided on an upper surface of the gate line (50), and therefore, the upper surface is exposed. On the other hand, the insulating layer (90) is provided on the substrate so as to have contact with at least an edge face of the gate line (50) which edge face is on an extension of a longitudinal direction of the gate line (50).
摘要翻译：本发明的有源矩阵基板（30）包括基板，形成在基板上的栅极线（50），以及用于使形成在栅极线（50）上的与栅极线（50）形成的层绝缘的层间绝缘层（90）（50）。在基板的区域中，层间绝缘层（90）不设置在栅极线（50）的上表面上，因此露出上表面。另一方面，绝缘层（90）设置在基板上，以便与栅极线（50）的至少边缘面接触，该边缘面在栅极线的纵向方向上的延伸部 50）。

8. 发明申请

US20060044487A1 Active-matrix substrate and display device including the substrate 有权
标题翻译：有源矩阵基板和包括基板的显示装置
公开(公告)号：US20060044487A1
公开(公告)日：2006-03-02
申请号：US11214764
申请日：2005-08-31
申请人： Yoshihiro Okada , Wataru Nakamura , Kenji Nakamura
发明人： Yoshihiro Okada , Wataru Nakamura , Kenji Nakamura
IPC分类号： G02F1/136
CPC分类号： G02F1/136286
摘要： An active-matrix substrate includes: a base substrate; source lines; gate lines; thin-film transistors; and pixel electrodes. Each transistor is a bottom-gate thin-film transistor. The source lines are arranged under the gate lines with a first interlayer insulating film interposed and are electrically connected to the respective source electrodes of their associated thin-film transistors through contact holes cut through the first interlayer insulating film.
摘要翻译：有源矩阵基板包括：基底; 源线; 门线薄膜晶体管; 和像素电极。每个晶体管是底栅薄膜晶体管。源极线布置在栅极线的下面，其中插入有第一层间绝缘膜，并且通过穿过第一层间绝缘膜的接触孔与其相关联的薄膜晶体管的各个源极电连接。

9. 发明授权

US07436464B2 Active-matrix substrate and display device including the substrate wherein a bottom-gate TFT has data lines formed below the gate lines 有权
标题翻译：有源矩阵基板和包括基板的显示装置，其中底栅TFT具有形成在栅极线下方的数据线
公开(公告)号：US07436464B2
公开(公告)日：2008-10-14
申请号：US11214764
申请日：2005-08-31
申请人： Yoshihiro Okada , Wataru Nakamura , Kenji Nakamura
发明人： Yoshihiro Okada , Wataru Nakamura , Kenji Nakamura
IPC分类号： G02F1/136
CPC分类号： G02F1/136286
摘要： An active-matrix substrate includes: a base substrate; source lines; gate lines; thin-film transistors; and pixel electrodes. Each transistor is a bottom-gate thin-film transistor. The source lines are arranged under the gate lines with a first interlayer insulating film interposed and are electrically connected to the respective source electrodes of their associated thin-film transistors through contact holes cut through the first interlayer insulating film.
摘要翻译：有源矩阵基板包括：基底; 源线; 门线薄膜晶体管; 和像素电极。每个晶体管是底栅薄膜晶体管。源极线布置在栅极线的下面，其中插入有第一层间绝缘膜，并且通过穿过第一层间绝缘膜的接触孔与其相关联的薄膜晶体管的各个源极电连接。

10. 发明授权

US08779430B2 Semiconductor device, active matrix substrate, and display device 有权
标题翻译：半导体器件，有源矩阵基板和显示器件
公开(公告)号：US08779430B2
公开(公告)日：2014-07-15
申请号：US13696623
申请日：2011-04-27
申请人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
发明人： Shoji Okazaki , Takeshi Yaneda , Wataru Nakamura , Hiromitsu Katsui
IPC分类号： H01L29/04 , H01L29/10 , H01L29/15 , H01L31/00 , H01L31/036 , H01L29/786 , G02F1/1368 , H01L29/423 , H01L29/417 , G02F1/1362
CPC分类号： H01L29/78696 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L29/41733 , H01L29/42384
摘要： A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104); and a drain electrode (107) connected to the drain region above the semiconductor layer (104). The semiconductor layer (104) has, at a portion overlapping the drain electrode (107), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (107). At an outside of the channel region sandwiched between the drain electrode (107) and the source electrode (106), the semiconductor layer (104) has an adjustment portion where an outer boundary of the semiconductor layer (104) is positioned more inward than an outer boundary of the gate electrode (102).
摘要翻译：半导体器件（18）包括：形成在衬底（101）上的栅极（102）; 形成在栅电极（102）上方并包括源极区，漏极区和沟道区的半导体层（104）与所述半导体层（104）上方的源极区域连接的源电极（106）。以及连接到半导体层（104）上方的漏极区的漏电极（107）。半导体层（104）在与漏电极（107）重叠的部分处具有沿着从漏电极（107）引出的漏极线的延伸方向向外突出的突起。在夹在漏电极（107）和源电极（106）之间的沟道区域的外部，半导体层（104）具有调整部分，其中半导体层（104）的外边界位于栅电极（102）的外边界。

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