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    • 7. 发明授权
    • Balloon catheter
    • 气球导管
    • US07172796B2
    • 2007-02-06
    • US10632952
    • 2003-08-04
    • Yasushi KinoshitaHiraku Murayama
    • Yasushi KinoshitaHiraku Murayama
    • B29D22/00B29D23/00B32B1/08
    • A61L29/126Y10T428/1334Y10T428/1352Y10T428/1362Y10T428/1369
    • A balloon catheter includes a long-sized body extending between a proximal end and a distal end, the body internally having at least one lumen, and a balloon made from a composite material composed of short-fibers for reienforcement and a matrix resin, the balloon being disposed on the distal side of the long-sized body. The short-fibers are oriented in the balloon in such a manner that in a longitudinal cross-section of the balloon, 25% or more of the short-fibers are oriented in the major-axis direction of the balloon, 25% or more of the short-fibers are oriented in the direction oblique to the major-axis direction, and the remaining short-fibers are oriented in the direction nearly perpendicular to the major-axis direction; and in a diametrical cross-section of the balloon, 8% or more of the short-fibers are oriented in the circumferential direction of the balloon, 25% or more of the short-fibers are oriented in the direction perpendicular to the circumferential direction, that is, in the major-axis direction, and the remaining short-fibers are oriented in the direction oblique to the circumferential direction. The balloon catheter exhibits a high strength to withstand pressure and a good trackability.
    • 气囊导管包括在近端和远端之间延伸的长尺寸的身体,身体内部具有至少一个内腔,以及由复合材料制成的气囊,用于再纤维的短纤维和基质树脂,气囊 设置在长型身体的远侧。 短纤维以这样的方式定向在气囊中:在气囊的纵向截面中,25%以上的短纤维在球囊的长轴方向上取向,25%以上的短纤维 短纤维在与长轴方向倾斜的方向上取向,剩余的短纤维在大致垂直于长轴方向的方向上取向; 并且在气囊的直径截面中,短纤维的8%以上在球囊的圆周方向上取向,短纤维的25%以上在与圆周方向垂直的方向上取向, 即在长轴方向上,剩余的短纤维在与圆周方向倾斜的方向上取向。 气囊导管具有高强度以承受压力和良好的追踪性。
    • 8. 发明授权
    • LSI test socket for BGA
    • 用于BGA的LSI测试插座
    • US07129728B2
    • 2006-10-31
    • US10553189
    • 2004-07-09
    • Yasushi Kinoshita
    • Yasushi Kinoshita
    • G01R31/02
    • G01R1/0466G01R1/0483G01R1/06722
    • There is provided an LSI socket containing a pogo-pin type decoupling capacitor for reducing the potential fluctuation of power supplies and GNDs at the time of testing LSI incorporated in a BGA package. The LSI socket comprises a printed board 102 containing decoupling capacitors 113 corresponding to one or more power supply voltages inside thereof, a pogo-pin supporting casing portion 104 on which the printed board 102 is overlapped into a single piece, and pogo-pins 103 inserted into penetrating holes in which hole positions of through holes 109 drilled in the printed board 102 and casing holes 114 drilled in the pogo-pin supporting casing portion 104 are allowed to be matched, wherein the printed board 102 is disposed on the upper surface side of the pogo-pin supporting casing portion 104 which faces the BGA package, or disposed on the lower surface side of the pogo-pin supporting casing portion 104, at the time of testing the LSI incorporated in the BGA package.
    • 提供了一种LSI插座,其包含用于在测试包含在BGA封装中的LSI时降低电源和GND的电位波动的pogo-pin型去耦电容器。 LSI插座包括:印刷电路板102,其包含对应于其内部的一个或多个电源电压的去耦电容器113;印刷电路板102重叠成单件的弹簧销支撑壳体部分104和插入的弹簧销103 能够匹配在印刷基板102上钻孔的贯通孔109的孔位置和在弹簧销支撑壳体部分104中钻出的壳体孔114的贯通孔,其中印刷基板102配置在 在测试包含在BGA封装中的LSI时,面向BGA封装的pogo-pin支撑壳体部分104或者布置在pogo-pin支撑壳体部分104的下表面侧上。
    • 10. 发明授权
    • Method for fabricating a semiconductor device with bipolar transistor
    • 用双极晶体管制造半导体器件的方法
    • US5843828A
    • 1998-12-01
    • US593416
    • 1996-01-29
    • Yasushi Kinoshita
    • Yasushi Kinoshita
    • H01L29/73H01L21/331H01L29/423H01L29/732H01L21/326
    • H01L29/66272H01L29/42304H01L29/732
    • A semiconductor device with a bipolar transistor that enables to realize a reliable, electric connection of an intrinsic base region with a base electrode is provided. A semiconductor substructure has a surface area. An intrinsic base region is formed in the surface area. An emitter region is formed in the surface area to be surounded by the intrinsic base region, and an emitter electrode is formed to be contacted with the emitter region. An insulator is formed to surround the emitter electrode. A base electrode is formed not to be contacted with the intrinsic base region A conductive region is formed to be contacted with the intrinsic base region and the base electrode. The substructure has a recess formed on the surface area. The conductive region is produced by supplying a conductive material to the recess to be contacted with the intrinsic base region and the base electrode. The intrinsic base region is electrically connected to the base electrode through the conductive region. The recess is preferably produced by oxidizing a part of the surface area to form an oxide and removing the oxide.
    • 提供一种具有双极晶体管的半导体器件,其能够实现本征基极区域与基极的可靠的电连接。 半导体子结构具有表面积。 在表面积中形成本征基区。 在由本征基区域包围的表面区域中形成发射极区域,并且形成发射极电极以与发射极区域接触。 形成绝缘体以包围发射极电极。 基底电极形成为不与本征基极区域接触形成与本征基极区域和基极电极接触的导电区域。 该子结构具有形成在表面区域上的凹部。 通过向与本征基极区域和基极电极接触的凹部供给导电材料来制造导电区域。 本征基极区域通过导电区域与基极电连接。 该凹部优选通过氧化一部分表面积而形成氧化物并除去氧化物而制成。