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1. 发明授权

US08304780B2 Printed dopant layers 有权
标题翻译：印刷掺杂剂层
公开(公告)号：US08304780B2
公开(公告)日：2012-11-06
申请号：US12797274
申请日：2010-06-09
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

2. 发明授权

US07767520B2 Printed dopant layers 有权
标题翻译：印刷掺杂剂层
公开(公告)号：US07767520B2
公开(公告)日：2010-08-03
申请号：US11888949
申请日：2007-08-03
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L21/8242
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

3. 发明申请

US20140094004A1 Printed Dopant Layers 有权
标题翻译：印刷掺杂层
公开(公告)号：US20140094004A1
公开(公告)日：2014-04-03
申请号：US13633816
申请日：2012-10-02
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L21/336
CPC分类号： H01L27/1292 , H01L29/66757
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

4. 发明授权

US07701011B2 Printed dopant layers 有权
标题翻译：印刷掺杂剂层
公开(公告)号：US07701011B2
公开(公告)日：2010-04-20
申请号：US11888942
申请日：2007-08-03
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译：一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜，以及与第一和第二半导体岛电接触的金属层。第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。

5. 发明申请

US20100244133A1 Printed Dopant Layers 有权
标题翻译：印刷掺杂层
公开(公告)号：US20100244133A1
公开(公告)日：2010-09-30
申请号：US12797274
申请日：2010-06-09
申请人： Arvind KAMATH , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind KAMATH , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

6. 发明授权

US08840857B1 Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions 有权
标题翻译：杂环半导体前体化合物，含有它们的组合物，以及制备这些化合物和组合物的方法
公开(公告)号：US08840857B1
公开(公告)日：2014-09-23
申请号：US13494895
申请日：2012-06-12
申请人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
发明人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
IPC分类号： C01B33/00
CPC分类号： C01B33/00 , C01B33/04
摘要： Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.
摘要翻译：杂环硅烷化合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂的硅烷膜印刷或旋涂到可以容易地转化成掺杂的非晶硅膜（也可以在一定程度上被氢化）的基底上，或掺杂多晶半导体薄膜适用于电子设备。因此，本发明有利地提供了来自“掺杂液体硅”组合物的商业品质和掺杂半导体膜的量。

7. 发明申请

US20110178321A1 Dopant Group-Substituted Semiconductor Precursor Compounds, Compositions Containing the Same, and Methods of Making Such Compounds and Compositions 有权
标题翻译：掺杂剂组取代的半导体前体化合物，其组合物及其制备方法
公开(公告)号：US20110178321A1
公开(公告)日：2011-07-21
申请号：US12689210
申请日：2010-01-18
申请人： Wenzhuo GUO , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
发明人： Wenzhuo GUO , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
IPC分类号： C07F7/08
CPC分类号： C07F7/0896
摘要： Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.
摘要翻译：掺杂基取代的（环）硅烷化合物，含有这些化合物的液相组合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂硅烷膜印刷或旋涂到基底上，该基底可以容易地转化为适合于电子器件的掺杂的非晶或多晶硅膜。因此，本发明有利地从掺杂的“液态硅”组合物提供商业品质和掺杂半导体膜的量。

8. 发明授权

US07314513B1 Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
标题翻译：形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法
公开(公告)号：US07314513B1
公开(公告)日：2008-01-01
申请号：US10949013
申请日：2004-09-24
申请人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
发明人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
IPC分类号： C09D183/16
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译：用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

9. 发明授权

US08624049B2 Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions 有权
标题翻译：掺杂基取代的半导体前体化合物，含有它们的组合物，以及制备这些化合物和组合物的方法
公开(公告)号：US08624049B2
公开(公告)日：2014-01-07
申请号：US12689210
申请日：2010-01-18
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Brent Ridley , Fabio Zürcher , Joerg Rockenberger , James Montague Cleeves
IPC分类号： C07F7/08
CPC分类号： C07F7/0896
摘要： Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.
摘要翻译：掺杂基取代的（环）硅烷化合物，含有这些化合物的液相组合物及其制备方法。这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂硅烷膜印刷或旋涂到基底上，该基底可以容易地转化为适合于电子器件的掺杂的非晶或多晶硅膜。因此，本发明有利地从掺杂的“液态硅”组合物提供商业品质和掺杂半导体膜的量。

10. 发明授权

US08372194B1 Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
标题翻译：形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法
公开(公告)号：US08372194B1
公开(公告)日：2013-02-12
申请号：US12020481
申请日：2008-01-25
申请人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
发明人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
IPC分类号： C09D183/16
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译：用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的液态硅具有商业质量和数量的掺杂半导体膜。

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