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1. 发明授权

US08426905B2 Profile engineered, electrically active thin film devices 有权
标题翻译：型材设计，电活性薄膜器件
公开(公告)号：US08426905B2
公开(公告)日：2013-04-23
申请号：US12243880
申请日：2008-10-01
申请人： Arvind Kamath , Erik Scher , Patrick Smith , Aditi Chandra , Steven Molesa
发明人： Arvind Kamath , Erik Scher , Patrick Smith , Aditi Chandra , Steven Molesa
IPC分类号： H01L29/788
CPC分类号： H01L21/36 , C23C18/08 , C23C18/122 , C23C18/1245 , C23C18/1295 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/28273 , H01L21/28518 , H01L21/288 , H01L21/76871 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L28/40 , H01L29/0657 , H01L29/66143 , H01L29/6675 , H01L29/7881 , H01L29/872 , H05K1/16 , H05K1/162 , H05K3/125 , H05K2201/098
摘要： The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
摘要翻译：本发明涉及具有平滑和/或圆顶形轮廓的电介质，导体和/或半导体层的电活性器件（例如，电容器，晶体管，二极管，浮动栅极存储单元等）和形成这种器件的方法通过沉积或印刷（例如喷墨印刷）包括半导体，金属或电介质前体的油墨组合物。平滑和/或圆顶形的横截面轮廓允许平滑的拓扑转变而没有尖锐的步骤，防止沉积期间的特征不连续性，并允许随后沉积的结构的更完整的阶梯覆盖。本发明的轮廓允许通过热氧化均匀生长氧化物层，以及基本均匀的结构蚀刻速率。这样的氧化物层可以具有均匀的厚度并且提供基本的电活性特征的基本上完整的覆盖。均匀蚀刻允许通过简单的各向同性蚀刻来降低电活性结构的临界尺寸的有效方法。

2. 发明授权

US08822301B2 Profile engineered thin film devices and structures 有权
标题翻译：型材设计薄膜器件和结构
公开(公告)号：US08822301B2
公开(公告)日：2014-09-02
申请号：US13791721
申请日：2013-03-08
申请人： Arvind Kamath , Erik Scher , Patrick Smith , Aditi Chandra , Steven Molesa
发明人： Arvind Kamath , Erik Scher , Patrick Smith , Aditi Chandra , Steven Molesa
IPC分类号： H01L21/20
CPC分类号： H01L21/36 , C23C18/08 , C23C18/122 , C23C18/1245 , C23C18/1295 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/28273 , H01L21/28518 , H01L21/288 , H01L21/76871 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L28/40 , H01L29/0657 , H01L29/66143 , H01L29/6675 , H01L29/7881 , H01L29/872 , H05K1/16 , H05K1/162 , H05K3/125 , H05K2201/098
摘要： The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
摘要翻译：本发明涉及具有平滑和/或圆顶形轮廓的电介质，导体和/或半导体层的电活性器件（例如，电容器，晶体管，二极管，浮动栅极存储单元等）和形成这种器件的方法通过沉积或印刷（例如喷墨印刷）包括半导体，金属或电介质前体的油墨组合物。平滑和/或圆顶形的横截面轮廓允许平滑的拓扑转变而没有尖锐的步骤，防止沉积期间的特征不连续性，并允许随后沉积的结构的更完整的阶梯覆盖。本发明的轮廓允许通过热氧化均匀生长氧化物层，以及基本均匀的结构蚀刻速率。这样的氧化物层可以具有均匀的厚度并且提供基本的电活性特征的基本上完整的覆盖。均匀蚀刻允许通过简单的各向同性蚀刻来降低电活性结构的临界尺寸的有效方法。

3. 发明授权

US08617992B2 Method of forming metal silicide contact and metal interconnect 有权
标题翻译：形成金属硅化物接触和金属互连的方法
公开(公告)号：US08617992B2
公开(公告)日：2013-12-31
申请号：US13427091
申请日：2012-03-22
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译：公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子。这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

4. 发明授权

US08158518B2 Methods of making metal silicide contacts, interconnects, and/or seed layers 有权
标题翻译：制造金属硅化物接触，互连和/或种子层的方法
公开(公告)号：US08158518B2
公开(公告)日：2012-04-17
申请号：US12175450
申请日：2008-07-17
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译：公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上，干燥油墨以形成形成硅化物的金属前体，以及加热形成硅化物的金属前体和硅表面以形成金属硅化物联系。任选地，可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上，以形成含金属互连。此外，一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子。这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

5. 发明申请

US20120181636A1 Printing of Contact Metal and Interconnect Metal Via Seed Printing and Plating 有权
标题翻译：通过种子印刷和电镀印刷接触金属和互连金属
公开(公告)号：US20120181636A1
公开(公告)日：2012-07-19
申请号：US13427091
申请日：2012-03-22
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L29/772 , H01L23/485 , H01L21/336
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译：公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子。这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

6. 发明授权

US08227320B2 High reliability surveillance and/or identification tag/devices and methods of making and using the same 有权
公开(公告)号：US08227320B2
公开(公告)日：2012-07-24
申请号：US12249735
申请日：2008-10-10
申请人： Vivek Subramanian , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
发明人： Vivek Subramanian , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
IPC分类号： H01L21/20
CPC分类号： G08B13/2431 , G06K19/067 , G06K19/07749 , G08B13/242 , G08B13/2437
摘要： The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

7. 发明申请

US20090137071A1 High Reliability Surveillance and/or Identification Tag/Devices and Methods of Making and Using the Same 有权
公开(公告)号：US20090137071A1
公开(公告)日：2009-05-28
申请号：US12249735
申请日：2008-10-10
申请人： Vivek SUBRAMANIAN , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
发明人： Vivek SUBRAMANIAN , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
IPC分类号： H01L21/34
CPC分类号： G08B13/2431 , G06K19/067 , G06K19/07749 , G08B13/242 , G08B13/2437
摘要： The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

8. 发明授权

US08264359B2 High reliability surveillance and/or identification tag/devices and methods of making and using the same 失效
标题翻译：高可靠性监控和/或识别标签/设备及其制作和使用方法
公开(公告)号：US08264359B2
公开(公告)日：2012-09-11
申请号：US12249754
申请日：2008-10-10
申请人： Vivek Subramanian , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
发明人： Vivek Subramanian , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
IPC分类号： G08B13/14 , G06K19/06
CPC分类号： G08B13/2431 , G06K19/067 , G06K19/07749 , G08B13/242 , G08B13/2437
摘要： The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.
摘要翻译：本发明涉及制造用于监视/识别标签或装置的电容器的方法，以及使用这种监视/识别装置的方法。根据本发明的方法制造并用于本文所述的监视/识别装置中的电容器包括印刷的导电和电介质层。本发明的方法和装置改进了与常规金属 - 塑料 - 金属电容器相关的制造公差以及在监视/识别标签或装置中使用的电容器的失活可靠性。

9. 发明授权

US08933806B2 High reliability surveillance and/or identification tag/devices and methods of making and using the same 有权
标题翻译：高可靠性监控和/或识别标签/设备及其制作和使用方法
公开(公告)号：US08933806B2
公开(公告)日：2015-01-13
申请号：US13590006
申请日：2012-08-20
申请人： Vivek Subramanian , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
发明人： Vivek Subramanian , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
IPC分类号： G08B13/14 , G08B13/24 , G06K19/067 , G06K19/06 , H01B13/00 , H01L21/00 , H01L21/20
CPC分类号： G08B13/2431 , G06K19/067 , G06K19/07749 , G08B13/242 , G08B13/2437
摘要： The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.
摘要翻译：本发明涉及制造用于监视/识别标签或装置的电容器的方法，以及使用这种监视/识别装置的方法。根据本发明的方法制造并用于本文所述的监视/识别装置中的电容器包括印刷的导电和电介质层。本发明的方法和装置改进了与常规金属 - 塑料 - 金属电容器相关的制造公差以及在监视/识别标签或装置中使用的电容器的失活可靠性。

10. 发明申请

US20130069785A1 High Reliability Surveillance and/or Identification Tag/Devices and Methods of Making and Using the Same 有权
公开(公告)号：US20130069785A1
公开(公告)日：2013-03-21
申请号：US13590006
申请日：2012-08-20
申请人： Vivek SUBRAMANIAN , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
发明人： Vivek SUBRAMANIAN , Patrick Smith , Vikram Pavate , Arvind Kamath , Criswell Choi , Aditi Chandra , James Montague Cleeves
IPC分类号： G08B13/24 , G06K19/067
CPC分类号： G08B13/2431 , G06K19/067 , G06K19/07749 , G08B13/242 , G08B13/2437
摘要： The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

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