会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Enhanced electron field emitter spindt tip and method for fabricating enhanced spindt tips
    • 增强的电子场发射器尖端以及用于制造增强型尖端的方法
    • US06817916B2
    • 2004-11-16
    • US10622909
    • 2003-07-21
    • Arthur Piehl
    • Arthur Piehl
    • H01J900
    • H01J9/025H01J3/022H01J2201/319
    • An enhanced Spindt-tip field emitter tip and a method for producing the enhanced Spindt-tip field emitter. A thin-film resistive heating element is positioned below the field emitter tip to allow for resistive heating of the tip in order to sharpen the tip and to remove adsorbed contaminants from the surface of the tip. Metal layers of the enhanced field emission device are separated by relatively thick dielectric bilayers, with the metal layers having increased thickness in the proximity of a cylindrical well in which the field emitter tip is deposited. Dielectric material is pulled back from the cylindrical aperture into which the field emitter tip is deposited in order to decrease buildup of conductive contaminants and the possibility of short circuits between metallic layers.
    • 增强的Spindt-tip场发射器尖端和用于产生增强的Spindt-tip场发射器的方法。 薄膜电阻加热元件位于场发射器尖端下方,以允许尖端的电阻加热,以便锐化尖端并从尖端的表面去除吸附的污染物。 增强型场致发射器件的金属层由相对厚的电介质双层隔开,金属层在其中沉积场致发射极尖端的圆柱形阱附近具有增加的厚度。 电介质材料从圆柱形孔中被拉回,放射场尖端被沉积到其中,以减少导电污染物的积聚和金属层之间短路的可能性。