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1. 发明授权

US06274465B1 DC electric field assisted anneal 失效
标题翻译：直流电场辅助退火
公开(公告)号：US06274465B1
公开(公告)日：2001-08-14
申请号：US09538309
申请日：2000-03-30
申请人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshiharu Furukawa , Glenn R. Miller , James A. Slinkman
发明人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshiharu Furukawa , Glenn R. Miller , James A. Slinkman
IPC分类号： H01L2104
CPC分类号： H01L21/324 , H01L21/2253 , H01L21/26513 , H01L21/326
摘要： A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to a DC electric field.
摘要翻译：一种用于在半导体器件中形成期望的接合剖面的方法。将至少一种掺杂剂引入到半导体衬底中。所述至少一种掺杂剂通过半导体衬底和所述至少一种掺杂剂退火而在半导体衬底中扩散，同时将半导体衬底暴露于DC电场。

2. 发明授权

US06552411B2 DC or AC electric field assisted anneal 失效
标题翻译： DC或AC电场辅助退火
公开(公告)号：US06552411B2
公开(公告)日：2003-04-22
申请号：US09809887
申请日：2001-03-16
申请人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
发明人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
IPC分类号： H01L2900
CPC分类号： H01L21/324 , H01L21/2253 , H01L21/26513 , H01L21/326
摘要： A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
摘要翻译：一种用于在半导体器件中形成期望的接合剖面的方法。将至少一种掺杂剂引入到半导体衬底中。所述至少一种掺杂剂通过对所述半导体衬底和所述至少一种掺杂物退火而在所述半导体衬底中扩散，同时将所述半导体衬底暴露于电场。

3. 发明授权

US06822311B2 DC or AC electric field assisted anneal 失效
标题翻译： DC或AC电场辅助退火
公开(公告)号：US06822311B2
公开(公告)日：2004-11-23
申请号：US10413301
申请日：2003-04-15
申请人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
发明人： Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
IPC分类号： H01L2900
CPC分类号： H01L21/2253 , C21D1/04 , H01L21/26513 , H01L21/324 , H01L21/326
摘要： A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
摘要翻译：一种用于在半导体器件中形成期望的接合剖面的方法。将至少一种掺杂剂引入到半导体衬底中。所述至少一种掺杂剂通过对所述半导体衬底和所述至少一种掺杂物退火而在所述半导体衬底中扩散，同时将所述半导体衬底暴露于电场。

4. 发明授权

US07008852B2 Discontinuous dielectric interface for bipolar transistors 失效
标题翻译：双极晶体管的不连续介质接口
公开(公告)号：US07008852B2
公开(公告)日：2006-03-07
申请号：US11001140
申请日：2004-12-02
申请人： Arne W. Ballantine , Douglas D. Coolbaugh , Jeffrey Gilbert , Joseph R. Greco , Glenn R. Miller
发明人： Arne W. Ballantine , Douglas D. Coolbaugh , Jeffrey Gilbert , Joseph R. Greco , Glenn R. Miller
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/3144 , H01L21/3185 , H01L29/0804 , H01L29/0895
摘要： A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, thereby controlling electrical resistance at the interface.
摘要翻译：一种在半导体材料的两个区域之间形成至少一个界面区域的方法。在半导体材料的两个区域的至少一部分边界附近形成包含氮的介电材料的至少一个区域，从而控制界面处的电阻。

5. 发明授权

US06939771B2 Discontinuous dielectric interface for bipolar transistors 失效
标题翻译：双极晶体管的不连续介质接口
公开(公告)号：US06939771B2
公开(公告)日：2005-09-06
申请号：US10653925
申请日：2003-09-04
申请人： Arne W. Ballantine , Douglas D. Coolbaugh , Jeffrey Gilbert , Joseph R. Greco , Glenn R. Miller
发明人： Arne W. Ballantine , Douglas D. Coolbaugh , Jeffrey Gilbert , Joseph R. Greco , Glenn R. Miller
IPC分类号： H01L29/73 , H01L21/314 , H01L21/318 , H01L21/328 , H01L21/331 , H01L29/08
CPC分类号： H01L29/66272 , H01L21/3144 , H01L21/3185 , H01L29/0804 , H01L29/0895
摘要： A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, thereby controlling electrical resistance at the interface.
摘要翻译：一种在半导体材料的两个区域之间形成至少一个界面区域的方法。在半导体材料的两个区域的至少一部分边界附近形成包含氮的介电材料的至少一个区域，从而控制界面处的电阻。

6. 发明授权

US06703283B1 Discontinuous dielectric interface for bipolar transistors 有权
标题翻译：双极晶体管的不连续介质接口
公开(公告)号：US06703283B1
公开(公告)日：2004-03-09
申请号：US09244958
申请日：1999-02-04
申请人： Arne W. Ballantine , Douglas D. Coolbaugh , Jeffrey Gilbert , Joseph R. Greco , Glenn R. Miller
发明人： Arne W. Ballantine , Douglas D. Coolbaugh , Jeffrey Gilbert , Joseph R. Greco , Glenn R. Miller
IPC分类号： H01L21331
CPC分类号： H01L29/66272 , H01L21/3144 , H01L21/3185 , H01L29/0804 , H01L29/0895
摘要： A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, thereby controlling electrical resistance at the interface.
摘要翻译：一种在半导体材料的两个区域之间形成至少一个界面区域的方法。在半导体材料的两个区域的至少一部分边界附近形成包含氮的介电材料的至少一个区域，从而控制界面处的电阻。

7. 发明授权

US06638629B2 Semiconductor temperature monitor 失效
标题翻译：半导体温度监测仪
公开(公告)号：US06638629B2
公开(公告)日：2003-10-28
申请号：US10200904
申请日：2002-07-22
申请人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
发明人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
IPC分类号： C30B502
CPC分类号： H01L22/34 , Y10T428/12674 , Y10T428/12681 , Y10T428/21
摘要： A method and structure for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across a wafer surface. A substrate that includes a semiconductor material and a first dopant, has an amorphous layer formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. Heating of the wafer at 450 to 625 degree C. recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.
摘要翻译：一种用于制造半导体晶片的方法和结构，该半导体晶片可用于监测跨晶片表面的温度分布。包括半导体材料和第一掺杂剂的衬底具有由衬底的顶部形成的非晶层，并且非晶层掺杂有与第一掺杂剂的极性相反极性的第二掺杂剂。在450〜625℃下对晶片进行加热，以取决于晶片表面的局部温度的再结晶速率，重结晶与基板相邻的部分非晶层。测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。

8. 发明授权

US06472232B1 Semiconductor temperature monitor 失效
标题翻译：半导体温度监测仪
公开(公告)号：US06472232B1
公开(公告)日：2002-10-29
申请号：US09510262
申请日：2000-02-22
申请人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
发明人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
IPC分类号： G01R3126
CPC分类号： H01L22/34 , Y10T428/12674 , Y10T428/12681 , Y10T428/21
摘要： A method, and associated structure, for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across the wafer surface. Given a substrate that includes a semiconductor material and a first dopant, an amorphous layer is formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. The amorphous layer may be formed by directing an ionic species, such as ionic germanium, into the top portion of the substrate. Alternatively, particular second dopants, such as arsenic, may serve to also amorphize the top portion of the substrate. Next, the wafer is heated to a temperature in a range of 450 to 625° C. The heating of the wafer recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the recrystallized layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.
摘要翻译：一种用于制造半导体晶片的方法和相关结构，其可用于监测晶片表面上的温度分布。给定包括半导体材料和第一掺杂剂的衬底，从衬底的顶部形成非晶层，并且非晶层掺杂极性与第一掺杂剂极性相反的第二掺杂剂。非晶层可以通过将离子物质例如离子锗引入衬底的顶部而形成。或者，特定的第二掺杂剂（例如砷）也可以用于使基底的顶部部分非晶化。接下来，将晶片加热到450-625℃的温度。晶片的加热使得与晶片相邻的非晶层的一部分以取决于晶片上的局部温度的再结晶速率重结晶表面。加热后，去除晶片，并在晶片表面上的点测量薄层电阻。由于局部薄层电阻是再结晶层的局部厚度的函数，薄片电阻在晶片表面上的空间分布反映了在晶片加热期间晶片温度跨晶片表面的分布。测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。

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