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1. 发明申请

US20050211980A1 Device and method for detecting stress migration properties 有权
标题翻译：用于检测应力迁移特性的装置和方法
公开(公告)号：US20050211980A1
公开(公告)日：2005-09-29
申请号：US11132665
申请日：2005-05-19
申请人： Armin Fischer , Alexander von Glasow , Jochen von Hagen
发明人： Armin Fischer , Alexander von Glasow , Jochen von Hagen
IPC分类号： H01L21/66 , H01L23/544 , H01L23/58
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.
摘要翻译：提供了一种用于检测安装在壳体中的半导体模块的应力迁移特性的装置和方法。在半导体模块中形成应力迁移试验（SMT）结构。集成加热（IH）装置形成在SMT结构内或者直接靠近SMT结构。 SMT结构包括第一互连层中的第一互连区域，第二互连层中的第二互连区域和通过第一绝缘层电连接互连区域的连接区域。 IH装置包括加热互连区域，加热电流流过该区域。加热互连区域在第一或第二互连区域或连接区域内或之外。当施加加热电流时，向SMT结构施加测量电压，并且测量通过SMT结构的电流以检测半导体模块的应力迁移特性。

2. 发明授权

US07888672B2 Device for detecting stress migration properties 有权
标题翻译：用于检测应力迁移特性的装置
公开(公告)号：US07888672B2
公开(公告)日：2011-02-15
申请号：US11132665
申请日：2005-05-19
申请人： Armin Fischer , Alexander von Glasow , Jochen von Hagen
发明人： Armin Fischer , Alexander von Glasow , Jochen von Hagen
IPC分类号： G01R31/26 , G01R27/08
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.
摘要翻译：提供了一种用于检测安装在壳体中的半导体模块的应力迁移特性的装置和方法。在半导体模块中形成应力迁移试验（SMT）结构。集成加热（IH）装置形成在SMT结构内或者直接靠近SMT结构。 SMT结构包括第一互连层中的第一互连区域，第二互连层中的第二互连区域和通过第一绝缘层电连接互连区域的连接区域。 IH装置包括加热互连区域，加热电流流过该区域。加热互连区域在第一或第二互连区域或连接区域内或之外。当施加加热电流时，向SMT结构施加测量电压，并且测量通过SMT结构的电流以检测半导体模块的应力迁移特性。

3. 发明授权

US07327152B2 Integrated test circuit arrangement and test method 有权
标题翻译：集成测试电路布置和测试方法
公开(公告)号：US07327152B2
公开(公告)日：2008-02-05
申请号：US10529340
申请日：2003-09-19
申请人： Armin Fischer , Alexander von Glasow
发明人： Armin Fischer , Alexander von Glasow
IPC分类号： G01R31/02
CPC分类号： G01R31/2877 , G01R31/2648 , G01R31/2856 , G01R31/2879 , H01L22/34 , H01L23/345 , H01L2924/0002 , H01L2924/00
摘要： An integrated test circuit arrangement is provided that contains integrated test structures, at least one integrated heating element, an integrated detection unit, an integrated supply unit, and a control unit. The integrated detection unit detects at least one physical property for each of the test structures. The integrated supply unit supplies each of the test structures with a current or a voltage in switchable fashion independently of one another. The control unit is connected to outputs of the detection unit on an input side and controls the supply unit dependent on the detection results.
摘要翻译：提供一种集成的测试电路装置，其包含集成测试结构，至少一个集成加热元件，集成检测单元，集成供应单元和控制单元。集成检测单元检测每个测试结构的至少一个物理属性。集成供应单元彼此独立地以可切换的方式向每个测试结构提供电流或电压。控制单元连接到输入侧的检测单元的输出，并根据检测结果来控制供给单元。

4. 发明授权

US07777300B2 Semiconductor device with capacitor 有权
标题翻译：带电容器的半导体器件
公开(公告)号：US07777300B2
公开(公告)日：2010-08-17
申请号：US11856775
申请日：2007-09-18
申请人： Helmut Tews , Hans-Gerd Jetten , Alexander von Glasow , Hans-Joachim Barth
发明人： Helmut Tews , Hans-Gerd Jetten , Alexander von Glasow , Hans-Joachim Barth
IPC分类号： H01L23/52
CPC分类号： H01L23/5223 , H01G4/33 , H01L28/40 , H01L2924/0002 , Y10T29/435 , H01L2924/00
摘要： One or more embodiments are related to a semiconductor structure, comprising: a semiconductor chip having a final metal layer; a dielectric layer disposed over the final metal layer; and a conductive layer deposed over the dielectric layer, the dielectric layer being between the final metal layer and the conductive layer.
摘要翻译：一个或多个实施例涉及半导体结构，包括：具有最终金属层的半导体芯片; 设置在最终金属层上的电介质层; 并且导电层设置在电介质层之上，介电层位于最终的金属层和导电层之间。

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