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1. 发明授权

US06180976B2 Thin-film capacitors and methods for forming the same 有权
标题翻译：薄膜电容器及其形成方法
公开(公告)号：US06180976B2
公开(公告)日：2001-01-30
申请号：US09241728
申请日：1999-02-02
申请人： Arjun Kar Roy
发明人： Arjun Kar Roy
IPC分类号： H01L31119
CPC分类号： H01L28/55 , H01L21/31053 , H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved thin-film capacitor and methods for forming the same on a surface of a substrate are disclosed. The capacitor includes a bottom conducting plate formed by depositing conductive material within a trench of an insulating layer and planarizing the conducting and insulating layers. A dielectric film is then deposited on the substrate surface, such that at least a portion of the dielectric material remains over the bottom conducting plate. A second conductive layer is then deposited over the surface of the substrate, patterned and etched such that at least a portion of the second conducting material resides over at least a portion of the dielectric material.
摘要翻译：公开了一种改进的薄膜电容器及其在基板表面上的形成方法。电容器包括通过在绝缘层的沟槽内沉积导电材料并平坦化导电层和绝缘层而形成的底部导电板。然后在衬底表面上沉积电介质膜，使得电介质材料的至少一部分保留在底部导电板上。然后将第二导电层沉积在衬底的表面上，被图案化和蚀刻，使得第二导电材料的至少一部分驻留在电介质材料的至少一部分上。

2. 发明授权

US06943414B2 Method for fabricating a metal resistor in an IC chip and related structure 有权
标题翻译： IC芯片中金属电阻器的制造方法及相关结构
公开(公告)号：US06943414B2
公开(公告)日：2005-09-13
申请号：US10073751
申请日：2002-02-09
申请人： Arjun Kar Roy , David Howard , Q.Z. Liu
发明人： Arjun Kar Roy , David Howard , Q.Z. Liu
IPC分类号： H01L21/02 , H01L27/08 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L28/24 , H01L27/0802
摘要： According to one exemplary embodiment, an integrated circuit chip comprises a first interconnect metal layer. The integrated circuit chip further comprises a first intermediate dielectric layer situated over the first interconnect metal layer. The integrated circuit chip further comprises a metal resistor situated over the first intermetallic dielectric layer and below a second intermetallic dielectric layer. The integrated circuit chip further comprises a second interconnect metal layer over the second intermetallic dielectric layer. The integrated circuit chip further comprises a first intermediate via connected to first terminal of the metal resistor, where the first intermediate via is further connected to a first metal segment patterned in the second interconnect metal layer. The integrated circuit chip further comprises a second intermediate via connected to a second terminal of the metal resistor, where the second intermediate via is further connected to a second metal segment patterned in the second interconnect metal layer.
摘要翻译：根据一个示例性实施例，集成电路芯片包括第一互连金属层。集成电路芯片还包括位于第一互连金属层上的第一中间电介质层。集成电路芯片还包括位于第一金属间介电层之上并位于第二金属间介电层下方的金属电阻器。集成电路芯片还包括在第二金属间介电层上的第二互连金属层。集成电路芯片还包括连接到金属电阻器的第一端子的第一中间通孔，其中第一中间通孔进一步连接到在第二互连金属层中图案化的第一金属段。集成电路芯片还包括连接到金属电阻器的第二端子的第二中间通路，其中第二中间通路进一步连接到在第二互连金属层中图案化的第二金属段。

3. 发明授权

US06387770B2 Thin-film capacitors and methods for forming the same 有权
标题翻译：薄膜电容器及其形成方法
公开(公告)号：US06387770B2
公开(公告)日：2002-05-14
申请号：US09772726
申请日：2001-01-30
申请人： Arjun Kar Roy
发明人： Arjun Kar Roy
IPC分类号： H01L2120
CPC分类号： H01L28/55 , H01L21/31053 , H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved thin-film capacitor and methods for forming the same on a surface of a substrate are disclosed. The capacitor includes a bottom conducting plate formed by depositing conductive material within a trench of an insulating layer and planarizing the conducting and insulating layers. A dielectric film is then deposited on the substrate surface, such that at least a portion of the dielectric material remains over the bottom conducting plate. A second conductive layer is then deposited over the surface of the substrate, patterned and etched such that at least a portion of the second conducting material resides over at least a portion of the dielectric material.
摘要翻译：公开了一种改进的薄膜电容器及其在基板表面上的形成方法。电容器包括通过在绝缘层的沟槽内沉积导电材料并平坦化导电层和绝缘层而形成的底部导电板。然后在衬底表面上沉积电介质膜，使得电介质材料的至少一部分保留在底部导电板上。然后将第二导电层沉积在衬底的表面上，被图案化和蚀刻，使得第二导电材料的至少一部分驻留在电介质材料的至少一部分上。

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