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1. 发明授权

US5905264A Semiconductor detector 失效
标题翻译：半导体探测器
公开(公告)号：US5905264A
公开(公告)日：1999-05-18
申请号：US905644
申请日：1997-08-04
申请人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Alex Gorin , Shimon Klier , Eldan Halbertal
发明人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Alex Gorin , Shimon Klier , Eldan Halbertal
IPC分类号： G01T1/24 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14601 , G01T1/241 , G01T1/243 , H01L27/14676
摘要： A semiconductive detector includes a semiconductor substrate having electrodes formed at two opposite-facing surfaces thereof. A peripheral side-wall extends between the two opposite facing-surfaces, and an electrical insulator is formed on at least a portion of the side wall. An electrical conductor is provided over the insulator. A bias voltage may be applied to the conductor such that the electrical insulator and the conductor operate generally in a manner of a field effect transistor.
摘要翻译：半导体检测器包括具有形成在其两个相对的表面上的电极的半导体衬底。周边侧壁在两个相对的相对表面之间延伸，并且电绝缘体形成在侧壁的至少一部分上。电绝缘体上设有电导体。偏置电压可以施加到导体，使得电绝缘体和导体通常以场效应晶体管的方式工作。

2. 发明授权

US6034373A Semiconductor radiation detector with reduced surface effects 失效
标题翻译：具有降低表面效应的半导体辐射探测器
公开(公告)号：US6034373A
公开(公告)日：2000-03-07
申请号：US988590
申请日：1997-12-11
申请人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Alex Gorin , Shimon Klier , Eldan Halbertal
发明人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Alex Gorin , Shimon Klier , Eldan Halbertal
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14676
摘要： A semiconductor detector including a substrate formed of a semiconductor material and defining two opposite facing surfaces and at least one side wall, electrodes formed on two opposite facing surfaces of the substrate, the electrodes on one of the two opposite facing surfaces including an array of mutually spaced pixellated anodes defining interstices therebetween, an electrical insulator formed on the substrate at locations in the interstices between the mutually spaced pixellated anodes, or on the side wall, or both, and an electrical conductor formed onto at least part of the electrical insulator. There is also disclosed a method for overcoming performance degradation in a semiconductor detector due to non-uniformities in an electric field.
摘要翻译：一种半导体检测器，包括由半导体材料形成并限定两个相对的表面的基板和至少一个侧壁，形成在所述基板的两个相对的相对表面上的电极，所述两个相对的表面中的一个上的所述电极包括相互相对的阵列间隔的像素化阳极，在其间限定间隙，在相互间隔开的像素化阳极，或侧壁或两者之间的间隙中的位置处的衬底上形成的电绝缘体和形成在电绝缘体的至少一部分上的电导体。还公开了由于电场中的不均匀性而克服半导体检测器中的性能劣化的方法。

3. 发明授权

US07208740B2 Three dimensional radiation detector 失效
标题翻译：三维辐射探测器
公开(公告)号：US07208740B2
公开(公告)日：2007-04-24
申请号：US11430755
申请日：2006-05-09
申请人： Uri El-Hanany , Arie Shahar , Shimon Klier , Alex Tsigelman , Eldan Halberthal
发明人： Uri El-Hanany , Arie Shahar , Shimon Klier , Alex Tsigelman , Eldan Halberthal
IPC分类号： G01T1/24
CPC分类号： G01T1/202 , G01T1/2018
摘要： A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface. The position of interaction of a photon in the plane perpendicular to the direction of the incident radiation, is determined by which of the detector crystals in the stack detects the absorption, and by which of the rows of pixelated anodes in that crystal detects the absorption. The depth of interaction of a photon is determined by the location of the particular anode pixel in the above-mentioned row of pixelated anodes where the photon absorption is detected. The detector assembly is thus able to detect the point of interaction of a photon in all three dimensions.
摘要翻译：一种像素化检测器组件，包括薄的检测器晶体的堆叠，每个检测器晶体具有由比表面的尺寸更薄的边缘约束的一对平面。堆叠被布置成使得待检测的辐射入射在检测器晶体堆叠的一组边缘上。平面表面在辐射入射的大致入射方向上的尺寸足以确保被检测的基本上所有的高能量光子在检测器组件的深度内被吸收。每个检测器晶体具有形成在其一个平面表面上的二维像素化阳极阵列。阴极形成在其相对的平坦表面上，优选覆盖基本上所有的表面。垂直于入射辐射方向的平面中的光子相互作用的位置由叠层中的哪一个检测器晶体检测到吸收以及该晶体中哪一行的像素化阳极中的哪一行检测到吸收来确定。光子的相互作用深度由上述行检测到光子吸收的像素化阳极中的特定阳极像素的位置决定。因此，检测器组件能够检测所有三维中光子的相互作用点。

4. 发明授权

US07166848B2 Three dimensional radiation detector 失效
公开(公告)号：US07166848B2
公开(公告)日：2007-01-23
申请号：US10179909
申请日：2002-06-25
申请人： Uri El-Hanany , Arie Shahar , Shimon Klier , Alex Tsigelman , Eldan Halberthal
发明人： Uri El-Hanany , Arie Shahar , Shimon Klier , Alex Tsigelman , Eldan Halberthal
IPC分类号： G01T1/24
CPC分类号： G01T1/202 , G01T1/2018
摘要： A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface. The position of interaction of a photon in the plane perpendicular to the direction of the incident radiation, is determined by which of the detector crystals in the stack detects the absorption, and by which of the rows of pixelated anodes in that crystal detects the absorption. The depth of interaction of a photon is determined by the location of the particular anode pixel in the above-mentioned row of pixelated anodes where the photon absorption is detected. The detector assembly is thus able to detect the point of interaction of a photon in all three dimensions.

5. 发明授权

US06765213B2 Gamma-ray detector for coincidence detection 有权
标题翻译：伽马射线探测器用于重合检测
公开(公告)号：US06765213B2
公开(公告)日：2004-07-20
申请号：US09918371
申请日：2001-07-30
申请人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Shimon Klier , Eldan Halberthal
发明人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Shimon Klier , Eldan Halberthal
IPC分类号： G01T124
CPC分类号： G01T1/2928
摘要： A semiconductor coincidence detector device including at least a first and a second detector crystal array, each having a first and second surface, an array of pixellated anodes formed on each of the first surfaces, an array of segmented cathodes formed on each of the second surfaces, essentially each of the pixellated anodes being connected to an anode electronic channel for generating a first electrical signal corresponding to the energy of a photon impinging in the semiconductor, and essentially each of the segmented cathodes being connected to a cathode electronic channel for generating an electrical coincidence trigger signal on detection of a photon impinging in the semiconductor, the first electrical signal being read only from anodes located opposite the cathode segment generating the trigger signal.
摘要翻译：一种半导体符合检测器件，至少包括第一和第二检测器晶体阵列，每个具有第一和第二表面，形成在每个第一表面上的像素化阳极阵列，形成在每个第二表面上的分段阴极阵列，基本上每个像素化阳极连接到阳极电子通道，用于产生对应于入射在半导体中的光子的能量的第一电信号，并且基本上每个分段阴极连接到阴极电子通道，用于产生电检测入射在半导体中的光子时的重合触发信号，第一电信号仅从与产生触发信号的阴极段相对的阳极读取。

6. 发明授权

US5847398A Gamma-ray imaging with sub-pixel resolution 失效
标题翻译：伽玛射线成像与亚像素分辨率
公开(公告)号：US5847398A
公开(公告)日：1998-12-08
申请号：US896202
申请日：1997-07-17
申请人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Shimon Klier , Alexander Gorin , Eldan Halberthal
发明人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Shimon Klier , Alexander Gorin , Eldan Halberthal
IPC分类号： G01T1/164 , G01T1/24 , G01T1/29 , G01T1/161
CPC分类号： G01T1/1648 , G01T1/243 , G01T1/2928
摘要： A gamma ray imaging system for providing high resolution images includes a collimator plate with an array of multiple holes which image a gamma emitting object onto a semiconductor gamma detector pixel array coupled to a signal processor. The collimator holes are smaller than half the pixel pitch. The detector array is moved in steps, with a step-size equal to the pitch of the collimator holes, to successive imaging positions. The hole locations and imaging positions are such that gamma photons do not fall on the dead areas of the pixels. An electronic processing unit constructs from the pixel signals produced at each imaging position, a set of independent equations and solves them to derive the exact image signal of each irradiated area, and uses this data to compose and a display a high resolution gamma image of the object.
摘要翻译：用于提供高分辨率图像的伽马射线成像系统包括具有多个孔阵列的准直板，其将伽马发射物体成像到耦合到信号处理器的半导体伽马检测器像素阵列上。准直器孔小于像素间距的一半。检测器阵列以等于准直器孔的间距的步长逐步移动到连续的成像位置。孔位置和成像位置使得γ光子不会落在像素的死区上。电子处理单元从在每个成像位置产生的像素信号，一组独立方程构成，并解决它们以导出每个照射区域的精确图像信号，并且使用该数据来组合和显示高分辨率伽玛图像目的。

7. 发明申请

US20070040126A1 THREE DIMENSIONAL RADIATION DETECTOR 失效
标题翻译：三维辐射探测器
公开(公告)号：US20070040126A1
公开(公告)日：2007-02-22
申请号：US11430755
申请日：2006-05-09
申请人： Uri El-Hanany , Arie Shahar , Shimon Klier , Alex Tsigelman , Eldan Halberthal
发明人： Uri El-Hanany , Arie Shahar , Shimon Klier , Alex Tsigelman , Eldan Halberthal
IPC分类号： G01T1/24 , G01T1/29 , H01L27/146 , H01L25/00
CPC分类号： G01T1/202 , G01T1/2018
摘要： A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface. The position of interaction of a photon in the plane perpendicular to the direction of the incident radiation, is determined by which of the detector crystals in the stack detects the absorption, and by which of the rows of pixelated anodes in that crystal detects the absorption. The depth of interaction of a photon is determined by the location of the particular anode pixel in the above-mentioned row of pixelated anodes where the photon absorption is detected. The detector assembly is thus able to detect the point of interaction of a photon in all three dimensions.
摘要翻译：一种像素化检测器组件，包括薄的检测器晶体的堆叠，每个检测器晶体具有由比表面的尺寸更薄的边缘约束的一对平面。堆叠被布置成使得待检测的辐射入射在检测器晶体堆叠的一组边缘上。平面表面在辐射入射的大致入射方向上的尺寸足以确保被检测的基本上所有的高能量光子在检测器组件的深度内被吸收。每个检测器晶体具有形成在其一个平面表面上的二维像素化阳极阵列。阴极形成在其相对的平坦表面上，优选覆盖基本上所有的表面。垂直于入射辐射方向的平面中的光子相互作用的位置由叠层中的哪一个检测器晶体检测到吸收以及该晶体中哪一行的像素化阳极中的哪一行检测到吸收来确定。光子的相互作用深度由上述行检测到光子吸收的像素化阳极中的特定阳极像素的位置决定。因此，检测器组件能够检测所有三维中光子的相互作用点。

8. 发明授权

US06285029B1 Semiconductor gamma-ray detector 失效
标题翻译：半导体伽马射线探测器
公开(公告)号：US06285029B1
公开(公告)日：2001-09-04
申请号：US09123754
申请日：1998-07-27
申请人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Shimon Klier , Eldan Halberthal
发明人： Arie Shahar , Uri El-Hanany , Alex Tsigelman , Shimon Klier , Eldan Halberthal
IPC分类号： G01T124
CPC分类号： G01T1/2985 , G01T1/202 , G01T1/242 , G01T1/243 , G01T1/249
摘要： A novel semiconductor detector device, consisting of several layers of two dimensional detector modules each module being divided into an array of separate detector cells by means of the pixelation of the electrodes on the surfaces of the modules. The superimposed detector cells in equivalent positions in each layer are in electrical contact with those in the two immediately adjacent layers, such that the whole device effectively becomes a two dimensional array of stacks of individual detector cells, with a common bottom electrode. Current in each detector cell stack, induced by the absorption of a high energy photon in that stack, is measured by means of an integrating charge sensitive amplifier attached to each anode at the top of each cell stack. A large area gamma-ray detector, sufficiently thick to absorb the high energy photons arising from electron-positron annihilation events, is thus obtained, but without the expense associated with the production of a single detector crystal of the required thickness.
摘要翻译：一种新颖的半导体检测器装置，由几层二维检测器模块组成，每个模块通过模块表面上的电极的像素化被分成独立的检测器单元的阵列。每个层中等效位置的叠加的检测器单元与两个紧邻的层中的叠层检测器单元电接触，使得整个器件有效地成为具有公共底部电极的各个检测器单元的堆叠的二维阵列。通过在每个电池堆顶部连接到每个阳极的积分电荷敏感放大器来测量每个检测器电池堆中由该堆叠中的高能量光子的吸收而引起的电流。因此，获得了足够厚以吸收由电子 - 正电子湮灭事件引起的高能量光子的大面积γ射线检测器，但没有与所需厚度的单个检测器晶体的生产相关的费用。

9. 发明授权

US08530784B2 Method and system of machining using a beam of photons 有权
标题翻译：使用光子束加工的方法和系统
公开(公告)号：US08530784B2
公开(公告)日：2013-09-10
申请号：US12020604
申请日：2008-01-28
申请人： Uri El-Hanany , Arie Shahar , Alex Tsigelman , Zeev Gutman
发明人： Uri El-Hanany , Arie Shahar , Alex Tsigelman , Zeev Gutman
IPC分类号： B23K26/14 , B23K26/36
CPC分类号： B23K26/0604 , B23K26/0613 , B23K26/146 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： Some embodiments include methods, and systems of machining using a beam of photons. In some embodiments, a machining method to remove material in a machined region may include reducing transparency of the region to at least a predefined wavelength by irradiating the region with a first beam of photons to induce generation of free electrons in the region; and machining the region with a second beam of photons having the predefined wavelength. Other embodiments are described and claimed.
摘要翻译：一些实施例包括使用光子束的加工方法和系统。在一些实施例中，用于去除加工区域中的材料的加工方法可以包括通过用第一光子束照射该区域以在该区域中产生自由电子来将该区域的透明度降低到至少预定波长; 并用具有预定波长的第二光子束加工该区域。描述和要求保护其他实施例。

10. 发明申请

US20080185367A1 METHOD AND SYSTEM OF MACHINING USING A BEAM OF PHOTONS 有权
标题翻译：使用光束的加工方法和系统
公开(公告)号：US20080185367A1
公开(公告)日：2008-08-07
申请号：US12020604
申请日：2008-01-28
申请人： Uri El-Hanany , Arie Shahar , Alex Tsigelman , Zeev Gutman
发明人： Uri El-Hanany , Arie Shahar , Alex Tsigelman , Zeev Gutman
IPC分类号： B23K26/06 , B23K26/14 , B23K26/40
CPC分类号： B23K26/0604 , B23K26/0613 , B23K26/146 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： Some embodiments include methods, and systems of machining using a beam of photons. In some embodiments, a machining method to remove material in a machined region may include reducing transparency of the region to at least a predefined wavelength by irradiating the region with a first beam of photons to induce generation of free electrons in the region; and machining the region with a second beam of photons having the predefined wavelength. Other embodiments are described and claimed.
摘要翻译：一些实施例包括使用光子束的加工方法和系统。在一些实施例中，用于去除加工区域中的材料的加工方法可以包括通过用第一光子束照射该区域以在该区域中产生自由电子来将该区域的透明度降低到至少预定波长; 并用具有预定波长的第二光子束加工该区域。描述和要求保护其他实施例。

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