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1. 发明申请

US20060210993A1 DNA structures on ferroelectrics and semiconductors 有权
公开(公告)号：US20060210993A1
公开(公告)日：2006-09-21
申请号：US11064907
申请日：2005-02-23
申请人： Aref Chowdhury , Hock Ng , Bernard Yurke
发明人： Aref Chowdhury , Hock Ng , Bernard Yurke
IPC分类号： C12Q1/68 , C12M1/34
CPC分类号： G02B6/124 , B82Y10/00 , B82Y15/00 , B82Y20/00 , G01N33/553 , G01N33/588
摘要： An apparatus includes a substrate and a plurality of DNA oligomers in contact with a top surface of the substrate. The substrate is a polar ferroelectric or a polar compound semiconductor.

2. 发明授权

US08569042B2 DNA structures on ferroelectrics and semiconductors 有权
标题翻译：铁电体和半导体上的DNA结构
公开(公告)号：US08569042B2
公开(公告)日：2013-10-29
申请号：US11064907
申请日：2005-02-23
申请人： Aref Chowdhury , Hock Min Ng , Bernard Yurke
发明人： Aref Chowdhury , Hock Min Ng , Bernard Yurke
IPC分类号： C12M1/34 , C12M1/00 , C12Q1/68 , G01N27/00 , G01N21/00 , H01L21/20 , C07H21/02
CPC分类号： G02B6/124 , B82Y10/00 , B82Y15/00 , B82Y20/00 , G01N33/553 , G01N33/588
摘要： An apparatus includes a substrate and a plurality of DNA oligomers in contact with a top surface of the substrate. The substrate is a polar ferroelectric or a polar compound semiconductor.
摘要翻译：一种装置包括底物和与基底的顶表面接触的多个DNA低聚物。基板是极性铁电体或极性化合物半导体。

3. 发明授权

US08070966B2 Group III-nitride layers with patterned surfaces 有权
标题翻译：具有图案化表面的III族氮化物层
公开(公告)号：US08070966B2
公开(公告)日：2011-12-06
申请号：US12315202
申请日：2008-12-01
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： C25F3/00 , C03C25/68 , H01L21/461
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译：制造方法产生III族氮化物的机械图案化层。该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。第一和第二III族氮化物具有不同的合金组成。该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

4. 发明申请

US20060220525A1 Group III-nitride layers with patterned surfaces 有权
公开(公告)号：US20060220525A1
公开(公告)日：2006-10-05
申请号：US11442032
申请日：2006-05-27
申请人： Aref Chowdhury , Hock Ng , Richart Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Slusher
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

5. 发明授权

US08613860B2 Group III-nitride layers with patterned surfaces 有权
标题翻译：具有图案化表面的III族氮化物层
公开(公告)号：US08613860B2
公开(公告)日：2013-12-24
申请号：US13248394
申请日：2011-09-29
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： C25F3/00 , C23F1/00 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译：制造方法产生III族氮化物的机械图案化层。该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。第一和第二III族氮化物具有不同的合金组成。该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

6. 发明申请

US20120028448A1 Group III-Nitride Layers With Patterned Surfaces 有权
标题翻译：具有图形表面的III族氮化物层
公开(公告)号：US20120028448A1
公开(公告)日：2012-02-02
申请号：US13248394
申请日：2011-09-29
申请人： Aref Chowdhury , Hock Ng , Richart Elliot Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliot Slusher
IPC分类号： H01L21/20
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译：制造方法产生III族氮化物的机械图案化层。该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。第一和第二III族氮化物具有不同的合金组成。该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

7. 发明授权

US07468578B2 Group III-nitride layers with patterned surfaces 有权
标题翻译：具有图案化表面的III族氮化物层
公开(公告)号：US07468578B2
公开(公告)日：2008-12-23
申请号：US11442032
申请日：2006-05-27
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： H01J9/24
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译：制造方法产生III族氮化物的机械图案化层。该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。第一和第二III族氮化物具有不同的合金组成。该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

8. 发明申请

US20090139957A1 Group III-Nitride layers with patterned surfaces 有权
标题翻译：具有图案化表面的III-III族氮化物层
公开(公告)号：US20090139957A1
公开(公告)日：2009-06-04
申请号：US12315202
申请日：2008-12-01
申请人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Elliott Slusher
IPC分类号： B44C1/22
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译：制造方法产生III族氮化物的机械图案化层。该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。第一和第二III族氮化物具有不同的合金组成。该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

9. 发明申请

US20050269593A1 Group III-nitride layers with patterned surfaces 有权
标题翻译：具有图案化表面的III族氮化物层
公开(公告)号：US20050269593A1
公开(公告)日：2005-12-08
申请号：US11180350
申请日：2005-07-13
申请人： Aref Chowdhury , Hock Ng , Richart Slusher
发明人： Aref Chowdhury , Hock Ng , Richart Slusher
IPC分类号： H01L21/205 , B81B1/00 , G02B6/122 , H01J1/30 , H01J1/304 , H01J9/02 , H01L21/306 , H01L29/24
CPC分类号： B82Y20/00 , B81B1/00 , G02B6/1225 , G02B2006/12035 , H01J1/304 , H01J3/022 , H01J9/025 , H01L21/0254 , H01L21/02639 , H01L21/30612
摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
摘要翻译：制造方法产生III族氮化物的机械图案化层。该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。第一和第二III族氮化物具有不同的合金组成。该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

10. 发明授权

US09054807B2 Reducing crosstalk in optical wavelength converters 有权
标题翻译：减少光波长转换器中的串扰
公开(公告)号：US09054807B2
公开(公告)日：2015-06-09
申请号：US11138007
申请日：2005-05-26
申请人： Aref Chowdhury , Gregory Raybon
发明人： Aref Chowdhury , Gregory Raybon
IPC分类号： H04B10/2513
CPC分类号： H04B10/2513
摘要： An optical fiber transmission system includes a series of optical fiber transmission spans and one or more all-optical signal processors. The optical fiber transmission spans are connected to form an optical communication path. Each all-optical signal processor directly connects a corresponding adjacent pair of the spans. Each all-optical signal processor includes an optical wavelength converter having input and output ports and a dispersion adjustment module connected to the input port of the optical wavelength converter of the same processor. The dispersion module is also configured to adjust cumulative dispersions of some received optical pulses to be outside of a range for the cumulative dispersions of corresponding optical pulses in the span directly preceding the same processor.
摘要翻译：光纤传输系统包括一系列光纤传输跨度和一个或多个全光信号处理器。光纤传输跨接连接形成光通信路径。每个全光信号处理器直接连接相应的相邻的一对跨距。每个全光信号处理器包括具有输入和输出端口的光波长转换器和连接到同一处理器的光波长转换器的输入端口的色散调节模块。分散模块还被配置为将一些接收到的光脉冲的累积色散调整在与直接在同一处理器之前的范围内的对应光脉冲的累积色散的范围之外。

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