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1. 发明授权

US08890221B2 Backside illuminated image sensor pixels with dark field microlenses 有权
标题翻译：背面照明的图像传感器像素与暗场微透镜
公开(公告)号：US08890221B2
公开(公告)日：2014-11-18
申请号：US14031804
申请日：2013-09-19
申请人： Aptina Imaging Corporation
发明人： Victor Lenchenkov , Xianmin Yi
IPC分类号： H01L31/062 , H01L31/113 , H01L21/00 , H04N5/335 , H01L27/146
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L27/14685 , H04N5/335
摘要： A backside illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in a front surface of a semiconductor substrate. Silicon inner microlenses may be formed on a back surface of the semiconductor substrate. In particular, positive inner microlenses may be formed over the photodiodes, whereas negative inner microlenses may be formed over the associated pixel circuits. Buried light shielding structures may be formed over the negative inner microlenses to prevent pixel circuitry that is formed in the substrate between two neighboring photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with antireflective coating material can reduce optical pixel crosstalk and enhance global shutter efficiency.
摘要翻译：提供具有图像传感器像素阵列的背面照明图像传感器。每个图像像素可以包括形成在半导体衬底的前表面中的光电二极管和相关联的像素电路。硅内部微透镜可以形成在半导体衬底的背面上。特别地，正内部微透镜可以形成在光电二极管上，而负的内部微透镜可以形成在相关联的像素电路上。掩埋的光屏蔽结构可以形成在负的内部微透镜上，以防止形成在两个相邻光电二极管之间的衬底中的像素电路暴露于入射光。掩埋的遮光结构可以衬有吸收性抗反射涂层材料，以防止光从掩埋的光屏蔽结构的表面反射出来。用防反射涂层材料形成掩埋的光屏蔽结构可以减少光学像素串扰并增强全局快门效率。

2. 发明申请

US20140077325A1 IMAGING PIXELS WITH IMPROVED PHOTODIODE STRUCTURES 有权
标题翻译：成像像素与改进的光电子结构
公开(公告)号：US20140077325A1
公开(公告)日：2014-03-20
申请号：US14031691
申请日：2013-09-19
申请人： Aptina Imaging Corporation
发明人： Xianmin Yi , Paul Perez
IPC分类号： H01L27/146 , H01L31/0352
CPC分类号： H01L27/14605 , H01L27/1461 , H01L27/14643 , H01L31/03529
摘要： A photodiodes may be formed on a substrate such as an imager substrate. The photodiode may include first and second layers in the substrate that form a p-n junction. The first layer may have a first doping type such as p-type doping, whereas the second layer may have a second, opposite doping type such as n-type doping. A counter-doping implant region may be provided that only partially overlaps with the second layer of the photodiode. The counter-doping implant region may have an opposite doping type to the second layer and may have a dopant concentration that is less than the dopant concentration of the second layer. The counter-doping implant region may extend into a third layer of the substrate that may have the same doping type of the second layer but at a lower concentration than the counter-doping implant region.
摘要翻译：可以在诸如成像器基板的基板上形成光电二极管。光电二极管可以包括形成p-n结的衬底中的第一和第二层。第一层可以具有诸如p型掺杂的第一掺杂类型，而第二层可以具有第二相反的掺杂类型，例如n型掺杂。可以提供仅与光电二极管的第二层部分重叠的反掺杂注入区域。对掺杂注入区域可以具有与第二层相反的掺杂类型，并且可以具有小于第二层的掺杂剂浓度的掺杂剂浓度。反掺杂注入区域可以延伸到衬底的第三层中，其可以具有与反掺杂注入区域相同的掺杂类型的第二层，但是具有较低的浓度。

3. 发明申请

US20140085517A1 BACKSIDE ILLUMINATED IMAGE SENSOR PIXELS WITH DARK FIELD MICROLENSES 有权
标题翻译：背面照明图像传感器像素与暗场微笑
公开(公告)号：US20140085517A1
公开(公告)日：2014-03-27
申请号：US14031804
申请日：2013-09-19
申请人： Aptina Imaging Corporation
发明人： Victor Lenchenkov , Xianmin Yi
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L27/14685 , H04N5/335
摘要： A backside illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in a front surface of a semiconductor substrate. Silicon inner microlenses may be formed on a back surface of the semiconductor substrate. In particular, positive inner microlenses may be formed over the photodiodes, whereas negative inner microlenses may be formed over the associated pixel circuits. Buried light shielding structures may be formed over the negative inner microlenses to prevent pixel circuitry that is formed in the substrate between two neighboring photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with antireflective coating material can reduce optical pixel crosstalk and enhance global shutter efficiency.
摘要翻译：提供具有图像传感器像素阵列的背面照明图像传感器。每个图像像素可以包括形成在半导体衬底的前表面中的光电二极管和相关联的像素电路。硅内部微透镜可以形成在半导体衬底的背面上。特别地，正内部微透镜可以形成在光电二极管上，而负的内部微透镜可以形成在相关联的像素电路上。掩埋的光屏蔽结构可以形成在负的内部微透镜上，以防止形成在两个相邻光电二极管之间的衬底中的像素电路暴露于入射光。掩埋的遮光结构可以衬有吸收性抗反射涂层材料，以防止光从掩埋的光屏蔽结构的表面反射出来。用防反射涂层材料形成掩埋的光屏蔽结构可以减少光学像素串扰并增强全局快门效率。

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