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1. 发明授权

US07046715B2 Method for suppressing energy spikes of a partially-coherent beam using triangular end-regions 有权
标题翻译：使用三角形端部区域抑制部分相干光束的能量尖峰的方法
公开(公告)号：US07046715B2
公开(公告)日：2006-05-16
申请号：US10883381
申请日：2004-07-01
申请人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitiani
发明人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitiani
IPC分类号： H01S3/00 , H01S3/08 , G03F1/00
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L21/768
摘要： Accordingly, a method of suppressing energy spikes is provided comprising projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature with the corner region to reduce energy spikes projected on a substrate. An alternative method is provided, wherein the corner region is modified such that it is replaced by a more tapered shaped region, preferably a triangle. Also provided, are a variety of mask designs incorporating both corner regions, with and without one or more blocking features, and triangular regions, with or without one or more blocking features. The mask designs provide examples of mask modifications that may be used to reduce energy spikes.
摘要翻译：因此，提供了一种抑制能量尖峰的方法，包括：通过具有包括具有边缘的拐角区域的狭缝图案的掩模投射激光束，并且具有角部区域的阻挡特征以减少投射在基板上的能量尖峰。提供了一种替代方法，其中拐角区域被修改为使得其被更锥形的区域，优选三角形替代。还提供了包括具有和不具有一个或多个阻挡特征的两个拐角区域以及具有或不具有一个或多个阻塞特征的三角形区域的各种掩模设计。掩模设计提供了可用于减少能量尖峰的掩模修改的示例。

2. 发明授权

US06792029B2 Method of suppressing energy spikes of a partially-coherent beam 有权
标题翻译：抑制部分相干光束的能量尖峰的方法
公开(公告)号：US06792029B2
公开(公告)日：2004-09-14
申请号：US10113144
申请日：2002-03-27
申请人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitiani
发明人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitiani
IPC分类号： H01S308
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L21/768
摘要： Accordingly, a method of suppressing energy spikes is provided comprising projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature with the corner region to reduce energy spikes projected on a substrate. An alternative method is provided, wherein the corner region is modified such that it is replaced by a more tapered shaped region, preferably a triangle. Also provided, are a variety of mask designs incorporating both corner regions, with and without one or more blocking features, and triangular regions, with or without one or more blocking features. The mask designs provide examples of mask modifications that may be used to reduce energy spikes.
摘要翻译：因此，提供了一种抑制能量尖峰的方法，包括：通过具有包括具有边缘的拐角区域的狭缝图案的掩模投射激光束，并且具有角部区域的阻挡特征以减少投射在基板上的能量尖峰。提供了一种替代方法，其中拐角区域被修改为使得其被更锥形的区域，优选三角形替代。还提供了包括具有和不具有一个或多个阻挡特征的两个拐角区域以及具有或不具有一个或多个阻塞特征的三角形区域的各种掩模设计。掩模设计提供了可用于减少能量尖峰的掩模修改的示例。

3. 发明授权

US07872309B2 Self-aligned lightly doped drain recessed-gate thin-film transistor 有权
标题翻译：自对准轻掺杂漏极栅极薄膜晶体管
公开(公告)号：US07872309B2
公开(公告)日：2011-01-18
申请号：US12140017
申请日：2008-06-16
申请人： Paul J. Schuele , Mark A. Crowder , Apostolos T. Voutsas , Hidayat Kisdarjono
发明人： Paul J. Schuele , Mark A. Crowder , Apostolos T. Voutsas , Hidayat Kisdarjono
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/78621 , H01L29/66621 , H01L29/66757 , H01L29/78627
摘要： A recessed-gate thin-film transistor (RG-TFT) with a self-aligned lightly doped drain (LDD) is provided, along with a corresponding fabrication method. The method deposits an insulator overlying a substrate and etches a trench in the insulator. The trench has a bottom and sidewalls. An active silicon (Si) layer is formed overlying the insulator and trench, with a gate oxide layer over the active Si layer. A recessed gate electrode is then formed in the trench. The TFT is doped and LDD regions are formed in the active Si layer overlying the trench sidewalls. The LDD regions have a length that extends from a top of the trench sidewall, to the trench bottom, with a doping density that decreases in response to the LDD length. Alternately stated, the LDD length is directly related to the depth of the trench.
摘要翻译：提供了具有自对准轻掺杂漏极（LDD）的凹入栅极薄膜晶体管（RG-TFT）以及相应的制造方法。该方法沉积覆盖衬底的绝缘体并蚀刻绝缘体中的沟槽。沟槽有一个底部和侧壁。在绝缘体和沟槽上形成有源硅（Si）层，在有源Si层上方形成栅极氧化层。然后在沟槽中形成凹陷栅电极。 TFT是掺杂的，并且LDD区域形成在覆盖沟槽侧壁的有源Si层中。 LDD区域具有从沟槽侧壁的顶部延伸到沟槽底部的长度，其掺杂密度响应于LDD长度而减小。替代地，LDD长度与沟槽的深度直接相关。

4. 发明授权

US07256109B2 Isotropic polycrystalline silicon 有权
标题翻译：各向同性多晶硅
公开(公告)号：US07256109B2
公开(公告)日：2007-08-14
申请号：US11099198
申请日：2005-04-04
申请人： Masao Moriguchi , Apostolos T. Voutsas , Mark A. Crowder
发明人： Masao Moriguchi , Apostolos T. Voutsas , Mark A. Crowder
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2022 , H01L21/2026 , H01L29/16 , H01L29/66757 , H01L29/78675
摘要： A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
摘要翻译：提供了高质量各向同性多晶硅（poly-Si）和制造高质量各向同性多晶硅膜的方法。该方法包括在a-Si膜的第一区域中形成非晶硅膜（a-Si）并使用MISPC工艺形成多晶硅膜。然后，该方法使用激光诱导横向生长（LILaC）过程退火包括在第一区域中的第二区域。在一些方面，使用2N射击激光照射工艺作为LILaC工艺。在一些方面，使用定向凝固方法作为LILaC方法。响应于使用MISPC膜作为前体膜，该方法在第二区域中在多晶硅中形成低角度晶界。

5. 发明授权

US07056843B2 Low-fluence irradiation for lateral crystallization enabled by a heating source 有权
标题翻译：通过加热源进行横向结晶的低能量照射
公开(公告)号：US07056843B2
公开(公告)日：2006-06-06
申请号：US11062069
申请日：2005-02-18
申请人： Robert S. Sposili , Mark A. Crowder , Apostolos T. Voutsas
发明人： Robert S. Sposili , Mark A. Crowder , Apostolos T. Voutsas
IPC分类号： H01L21/26
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
摘要翻译：横向结晶的方法包括在衬底表面上提供硅膜，将衬底表面处的局部衬底区域暴露于激光加热源，以及通过使硅暴露硅来使与局部衬底区域热接触的部分硅膜退火薄膜到低能量光学退火源。

6. 发明授权

US06709910B1 Method for reducing surface protrusions in the fabrication of lilac films 有权
标题翻译：淡紫膜制造中减少表面突起的方法
公开(公告)号：US06709910B1
公开(公告)日：2004-03-23
申请号：US10273549
申请日：2002-10-18
申请人： Mark A. Crowder , Apostolos T. Voutsas , Masahiro Adachi
发明人： Mark A. Crowder , Apostolos T. Voutsas , Masahiro Adachi
IPC分类号： H01L21336
CPC分类号： H01L21/02675 , H01L21/2022 , H01L21/2026
摘要： A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film using a LILAC process, with beamlets having a width in the range of 3 to 10 microns; in response to annealing, forming protrusions on the film surface; optionally oxidizing the film surface; thinning the film; and, in response to thinning the film, smoothing the film surface. Typically, the film surface is smoothed to a surface flatness of 300 Å, or less. In some aspects of the method, oxidizing the film surface includes oxidizing the film surface to a depth. Then, thinning the film includes thinning the film to a third thickness equal to the first thickness minus the depth.
摘要翻译：提供了一种用于在LILAC膜的制造中减少膜表面突起的系统和方法。该方法包括：形成具有第一厚度的非晶膜; 使用LILAC工艺对膜进行退火，其中子束的宽度在3至10微米的范围内; 响应于退火，在膜表面上形成突起; 可选地氧化膜表面; 弄薄膜; 并且，为了使薄膜变薄，平滑膜表面。通常，膜表面平滑至300或更小的表面平坦度。在该方法的一些方面，氧化膜表面包括将膜表面氧化至深度。然后，使薄膜变薄包括将薄膜变薄至等于第一厚度减去深度的第三厚度。

7. 发明授权

US07804647B2 Sub-resolutional laser annealing mask 有权
标题翻译：子解决激光退火掩模
公开(公告)号：US07804647B2
公开(公告)日：2010-09-28
申请号：US11653057
申请日：2007-01-13
申请人： Yasuhiro Mitani , Apostolos T. Voutsas , Mark A. Crowder
发明人： Yasuhiro Mitani , Apostolos T. Voutsas , Mark A. Crowder
IPC分类号： G02B5/18
CPC分类号： C30B29/06 , C30B13/00
摘要： A method for smoothing an annealed surface uses a sub-resolution mask pattern. The method supplies a laser beam having a first wavelength and a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension. A laser beam having a first energy density is applied to a substrate region, melting a substrate region in response to the first energy density and crystallizing the substrate region. A diffracted laser beam is applied to the substrate region, smoothing the substrate region surface. Applying a diffracted laser beam to the substrate area may include applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region.
摘要翻译：用于平滑退火表面的方法使用子分辨率掩模图案。该方法提供具有第一波长和掩模的激光束，其具有具有第一尺寸的孔的第一掩模部分和具有小于第一尺寸的具有第二尺寸的孔的第二掩模部分。具有第一能量密度的激光束被施加到衬底区域，响应于第一能量密度熔化衬底区域并使衬底区域结晶。将衍射激光束施加到衬底区域，使衬底区域表面平滑化。将衍射激光束施加到衬底区域可以包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。

8. 发明授权

US07235811B2 Thin film structure from LILAC annealing 失效
标题翻译： LILAC退火的薄膜结构
公开(公告)号：US07235811B2
公开(公告)日：2007-06-26
申请号：US10755487
申请日：2004-01-12
申请人： Mark A. Crowder , Apostolos T. Voutsas , Masahiro Adachi
发明人： Mark A. Crowder , Apostolos T. Voutsas , Masahiro Adachi
IPC分类号： H01L29/04
CPC分类号： H01L21/02675 , H01L21/2022 , H01L21/2026
摘要： A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film using a LILAC process, with beamlets having a width in the range of 3 to 10 microns; in response to annealing, forming protrusions on the film surface; optionally oxidizing the film surface; thinning the film; and, in response to thinning the film, smoothing the film surface. Typically, the film surface is smoothed to a surface flatness of 300 Å, or less. In some aspects of the method, oxidizing the film surface includes oxidizing the film surface to a depth. Then, thinning the film includes thinning the film to a third thickness equal to the first thickness minus the depth.
摘要翻译：提供了一种用于在LILAC膜的制造中减少膜表面突起的系统和方法。该方法包括：形成具有第一厚度的非晶膜; 使用LILAC工艺对膜进行退火，其中子束的宽度在3至10微米的范围内; 响应于退火，在膜表面上形成突起; 可选地氧化膜表面; 弄薄膜; 并且，为了使薄膜变薄，平滑膜表面。通常，膜表面平滑至300或更小的表面平坦度。在该方法的一些方面，氧化膜表面包括将膜表面氧化至深度。然后，使薄膜变薄包括将薄膜变薄至等于第一厚度减去深度的第三厚度。

9. 发明授权

US06959029B2 Apparatus for performing anastomosis 失效
标题翻译：用于进行吻合的装置
公开(公告)号：US06959029B2
公开(公告)日：2005-10-25
申请号：US10897763
申请日：2004-07-22
申请人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitani
发明人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitani
IPC分类号： B23K26/06 , C30B13/24 , G03F1/00 , H01L21/20 , H01L21/268 , H01L21/768 , H01S3/08
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L21/768
摘要： A wide-slit lateral growth projection mask, projection system, and corresponding crystallization process are provided. The mask includes an opaque region with at least one a transparent slit in the opaque region. The slit has a width in the range of 10X to 50X micrometers, with respect to a X:1 demagnification system, and a triangular-shaped slit end. The triangular-shaped slit end has a triangle height and an aspect ratio in the range of 0.5 to 5. The aspect ratio is defined as triangle height/slit width. In some aspects, the triangular-shaped slit end includes one or more opaque blocking features. In another aspect, the triangular-shaped slit end has stepped-shaped sides. The overall effect of the mask is to promote uniformly oriented grain boundaries, even in the film areas annealed under the slit ends.
摘要翻译：提供了宽缝侧向生长投影掩模，投影系统和相应的结晶过程。掩模包括在不透明区域中具有至少一个透明狭缝的不透明区域。狭缝相对于X：1缩小系统和三角形狭缝端部具有在10X至50X微米范围内的宽度。三角形狭缝端部具有三角形高度和宽度比在0.5至5的范围内。纵横比被定义为三角形高度/狭缝宽度。在一些方面，三角形狭缝端包括一个或多个不透明阻挡特征。在另一方面，三角形狭缝端部具有阶梯状侧面。掩模的整体效果是促进均匀取向的晶界，即使在狭缝端部退火的膜区域中也是如此。

10. 发明授权

US06939754B2 Isotropic polycrystalline silicon and method for producing same 有权
标题翻译：各向同性多晶硅及其制造方法
公开(公告)号：US06939754B2
公开(公告)日：2005-09-06
申请号：US10640771
申请日：2003-08-13
申请人： Masao Moriguchi , Apostolos T. Voutsas , Mark A. Crowder
发明人： Masao Moriguchi , Apostolos T. Voutsas , Mark A. Crowder
IPC分类号： H01L21/20 , H01L21/336 , H01L29/16 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2022 , H01L21/2026 , H01L29/16 , H01L29/66757 , H01L29/78675
摘要： A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
摘要翻译：提供了高质量各向同性多晶硅（poly-Si）和制造高质量各向同性多晶硅膜的方法。该方法包括在a-Si膜的第一区域中形成非晶硅膜（a-Si）并使用MISPC工艺形成多晶硅膜。然后，该方法使用激光诱导横向生长（LILaC）过程退火包括在第一区域中的第二区域。在一些方面，使用2N射击激光照射工艺作为LILaC工艺。在一些方面，使用定向凝固方法作为LILaC方法。响应于使用MISPC膜作为前体膜，该方法在第二区域中在多晶硅中形成低角度晶界。

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