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1. 发明申请

US20170288034A1 DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK 审中-公开
公开(公告)号：US20170288034A1
公开(公告)日：2017-10-05
申请号：US15499487
申请日：2017-04-27
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/423 , H01L29/06 , H01L29/40 , H01L27/088
CPC分类号： H01L29/42368 , H01L27/088 , H01L29/0619 , H01L29/401 , H01L29/4236
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

2. 发明授权

US10896968B2 Device structure and manufacturing method using HDP deposited source-body implant block 有权
公开(公告)号：US10896968B2
公开(公告)日：2021-01-19
申请号：US15499487
申请日：2017-04-27
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/423 , H01L29/06 , H01L29/40
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

3. 发明授权

US09024378B2 Device structure and manufacturing method using HDP deposited source-body implant block 有权
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US09024378B2
公开(公告)日：2015-05-05
申请号：US13763644
申请日：2013-02-09
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
IPC分类号： H01L29/78 , H01L21/265 , H01L29/66
CPC分类号： H01L29/7827 , H01L21/265 , H01L21/2652 , H01L21/26586 , H01L21/266 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

4. 发明申请

US20140225187A1 DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK 审中-公开
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US20140225187A1
公开(公告)日：2014-08-14
申请号：US13763644
申请日：2013-02-09
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/78 , H01L29/66 , H01L21/265
CPC分类号： H01L29/7827 , H01L21/265 , H01L21/2652 , H01L21/26586 , H01L21/266 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

5. 发明授权

US08035159B2 Device structure and manufacturing method using HDP deposited source-body implant block 有权
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US08035159B2
公开(公告)日：2011-10-11
申请号：US11796985
申请日：2007-04-30
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

6. 发明申请

US20120018793A1 Device structure and manufacturing method using HDP deposited using deposited source-body implant block 有权
标题翻译：使用沉积源体植入块沉积的HDP的装置结构和制造方法
公开(公告)号：US20120018793A1
公开(公告)日：2012-01-26
申请号：US13200869
申请日：2011-10-04
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L21/336 , H01L29/78 , H01L29/788
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

7. 发明授权

US08372708B2 Device structure and manufacturing method using HDP deposited using deposited source-body implant block 有权
标题翻译：使用沉积源体植入块沉积的HDP的装置结构和制造方法
公开(公告)号：US08372708B2
公开(公告)日：2013-02-12
申请号：US13200869
申请日：2011-10-04
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
IPC分类号： H01L21/8238 , H01L21/425
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

8. 发明授权

US08008716B2 Inverted-trench grounded-source FET structure with trenched source body short electrode 有权
标题翻译：反沟槽接地源FET结构，具有沟槽源体短路电极
公开(公告)号：US08008716B2
公开(公告)日：2011-08-30
申请号：US11522669
申请日：2006-09-17
申请人： Sik K Lui , François Hébert , Anup Bhalla
发明人： Sik K Lui , François Hébert , Anup Bhalla
IPC分类号： H01L29/66
CPC分类号： H01L29/781 , H01L21/823487 , H01L27/088 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.
摘要翻译：本发明公开了底源横向扩散MOS（BS-LDMOS）器件。器件具有在半导体衬底的顶表面附近的漏区附近设置的源极区域，该半导体衬底在源极区域和漏极区域之间支撑栅极。 BS-LDMOS器件还具有一个组合的沉降通道区域，该半导体衬底的深度完全位于靠近顶表面的源极区域附近设置的体区域之下，其中组合沉降通道区域用作掩埋源体用于将主体区域和源区域电连接到用作源电极的衬底的底部。漂移区域设置在栅极下方的顶表面附近并且远离源极区域并且延伸到并包围漏极区域。在漂移区域下方延伸的组合沉降通道区域和具有与掺杂剂 - 导电性相反并补偿漂移区域以减少源极 - 漏极电容的组合沉降沟道区域。

9. 发明授权

US08357973B2 Inverted-trench grounded-source FET structure with trenched source body short electrode 有权
标题翻译：反沟槽接地源FET结构，具有沟槽源体短路电极
公开(公告)号：US08357973B2
公开(公告)日：2013-01-22
申请号：US13199382
申请日：2011-08-25
申请人： Sik K Lui , François Hébert , Anup Bhalla
发明人： Sik K Lui , François Hébert , Anup Bhalla
IPC分类号： H01L29/66
CPC分类号： H01L29/781 , H01L21/823487 , H01L27/088 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.
摘要翻译：本发明公开了底源横向扩散MOS（BS-LDMOS）器件。器件具有在半导体衬底的顶表面附近的漏区附近设置的源极区域，该半导体衬底在源极区域和漏极区域之间支撑栅极。 BS-LDMOS器件还具有一个组合的沉降通道区域，该半导体衬底的深度完全位于靠近顶表面的源极区域附近设置的体区域之下，其中组合沉降通道区域用作掩埋源体用于将主体区域和源区域电连接到用作源电极的衬底的底部。漂移区域设置在栅极下方的顶表面附近并且远离源极区域并且延伸到并包围漏极区域。在漂移区域下方延伸的组合沉降通道区域和具有与掺杂剂 - 导电性相反并补偿漂移区域以减少源极 - 漏极电容的组合沉降沟道区域。

10. 发明申请

US20120025301A1 Inverted-trench grounded-source FET structure with trenched source body short electrode 有权
标题翻译：反沟槽接地源FET结构，具有沟槽源体短路电极
公开(公告)号：US20120025301A1
公开(公告)日：2012-02-02
申请号：US13199382
申请日：2011-08-25
申请人： Sik K. Lui , François Hébert , Anup Bhalla
发明人： Sik K. Lui , François Hébert , Anup Bhalla
IPC分类号： H01L29/78 , H01L21/8234
CPC分类号： H01L29/781 , H01L21/823487 , H01L27/088 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.
摘要翻译：本发明公开了底源横向扩散MOS（BS-LDMOS）器件。器件具有在半导体衬底的顶表面附近的漏区附近设置的源极区域，该半导体衬底在源极区域和漏极区域之间支撑栅极。 BS-LDMOS器件还具有一个组合的沉陷通道区域，该半导体衬底的深度完全位于靠近顶表面的源极区域附近设置的体区域之下，其中组合沉降通道区域用作掩埋源体用于将主体区域和源区域电连接到用作源电极的衬底的底部。漂移区域设置在栅极下方的顶表面附近并且远离源极区域并且延伸到并包围漏极区域。在漂移区域下方延伸的组合沉降通道区域和具有与掺杂剂 - 导电性相反并补偿漂移区域以减少源极 - 漏极电容的组合沉降沟道区域。

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