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    • 4. 发明申请
    • IN-LINE FIBER OPTIC SENSOR DEVICES AND METHODS OF FABRICATING SAME
    • 在线光纤传感器装置及其制造方法
    • US20080129980A1
    • 2008-06-05
    • US11948970
    • 2007-11-30
    • ANUJ DHAWANJohn Muth
    • ANUJ DHAWANJohn Muth
    • G01C3/14
    • G01C3/00
    • In-line fiber optic structure devices for use as environmental sensors and methods of fabricating in-line fiber optic structures as environmental sensors are disclosed and provided. According to some embodiments, fiber optic sensor devices can utilize the interaction of surface plasmons or evanescent waves with a surrounding environment. Fiber optic sensors according to some embodiments of the present invention provide an optical fiber with a long environmental interaction length having improved structural integrity. Graded-index optical fiber elements can be used as lenses and a coreless optical fiber element can act as an environmental interaction or sensing area. Graded-index and coreless optical elements can be fused to provide a continuous fiber optic sensing system. Other various embodiments are also claimed and described.
    • 公开并提供了用作环境传感器的在线光纤结构装置和制造作为环境传感器的在线光纤结构的方法。 根据一些实施例,光纤传感器设备可以利用表面等离子体激元或ev逝波与周围环境的相互作用。 根据本发明的一些实施例的光纤传感器提供具有改善的结构完整性的长的环境相互作用长度的光纤。 分级折射率光纤元件可以用作透镜,并且无芯光纤元件可以用作环境相互作用或感测区域。 渐变折射率和无芯光学元件可以融合,以提供连续的光纤感测系统。 还要求和描述其它各种实施例。
    • 8. 发明授权
    • Method and system for implementing a global name space service
    • 实现全局名称空间服务的方法和系统
    • US07689715B1
    • 2010-03-30
    • US10327544
    • 2002-12-20
    • Gregory L. SlaughterPaul CzarnikJohn MuthKai WongAndrew Krumel
    • Gregory L. SlaughterPaul CzarnikJohn MuthKai WongAndrew Krumel
    • G06F15/16
    • G06F17/30094
    • A method and system for implementing a global name space service. The method may include receiving a file system unique identifier corresponding to a particular file and a human-readable name corresponding to the same file. The method may further include binding the human-readable name to the file system unique identifier, thereby creating a mapping between the human-readable name and the file system unique identifier. The system may include a processor coupled to a memory and to a global name space service manager. The global name space service manager may be configured to receive a file system unique identifier corresponding to a particular file and a human-readable name corresponding to the same file. The global name space service manager may be further configured to bind the human-readable name to the file system unique identifier, thereby creating a mapping between the human-readable name and the file system unique identifier.
    • 一种实现全局名称空间服务的方法和系统。 该方法可以包括接收与特定文件相对应的文件系统唯一标识符和对应于相同文件的人类可读名称。 该方法还可以包括将人可读名称绑定到文件系统唯一标识符,由此创建人可读名称和文件系统唯一标识符之间的映射。 该系统可以包括耦合到存储器和全局名称空间服务管理器的处理器。 全局名称空间服务管理器可以被配置为接收对应于特定文件的文件系统唯一标识符和对应于相同文件的人类可读名称。 全局名称空间服务管理器可以被进一步配置为将人可读名称绑定到文件系统唯一标识符,由此创建人可读名称和文件系统唯一标识符之间的映射。
    • 10. 发明申请
    • Methods for nanoscale structures from optical lithography and subsequent lateral growth
    • 从光刻和后续横向生长的纳米结构的方法
    • US20070029643A1
    • 2007-02-08
    • US10550178
    • 2004-03-22
    • Mark JohnsonDouglas BarlageJohn Muth
    • Mark JohnsonDouglas BarlageJohn Muth
    • H01L23/58
    • B81C1/00111B81C1/00619B82Y10/00B82Y30/00H01L21/0237H01L21/0243H01L21/0254H01L21/02639H01L21/0265H01L21/28587H01L29/66318H01L29/66462
    • Methods, and structures formed thereby, are disclosed for forming laterally grown structures with nanoscale dimensions from nanoscale arrays which can be patterned from nanoscale lithography. The structures and methods disclosed herein have applications with electronic, photonic, molecular electronic, spintronic, microfluidic or nano-mechanical (NEMS) technologies. The spacing between laterally grown structures can be a nanoscale measurement, for example with a spacing distance which can be approximately 1-50 nm, and more particularly can be from approximately 3-5 nm. This spacing is appropriate for integration of molecular electronic devices. The pitch between posts can be less than the average distance characteristic between dislocation defects for example in GaN (ρ=1010/cm2→d=0.1 μm) resulting an overall reduction in defect density. Large-scale integration of nanoscale devices can be achieved using lithographic equipment that is orders of magnitude less expensive that that used for advanced lithographic techniques, such as electron beam lithography.
    • 公开了由此形成的方法和结构,用于从纳米尺度阵列形成具有纳米级尺寸的横向生长结构,其可以从纳米级光刻图案化。 本文公开的结构和方法具有电子,光子,分子电子,自旋电子,微流体或纳米机械(NEMS)技术的应用。 横向生长的结构之间的间隔可以是纳米尺度的测量,例如具有大约1-50nm的间隔距离,更特别地可以是大约3-5nm。 该间隔适用于分子电子器件的集成。 柱之间的间距可以小于例如在GaN中的位错缺陷之间的平均距离特性(r 10 = 10/10 / cm 2→d =0.1μm),得到 总体减少缺陷密度。 可以使用光刻设备实现纳米尺度器件的大规模集成,这些设备比用于高级光刻技术(例如电子束光刻)的成本要低一个数量级。