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    • 2. 发明授权
    • Hall-effect device with merged and/or non-merged complementary structure
    • 具有合并和/或非并置互补结构的霍尔效应器件
    • US07626377B2
    • 2009-12-01
    • US12032763
    • 2008-02-18
    • Wayne T. KilianGilberto Morales
    • Wayne T. KilianGilberto Morales
    • G01R15/20
    • H01L29/82G01R33/07H01L27/22H01L43/065
    • A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.
    • 具有合并和/或非合并互补结构以消除应力引起的偏移的霍尔效应器件包括n型外延霍尔元件和p型霍尔元件。 p型霍尔元件可以直接注入在n型外延霍尔元件的顶部。 合并的霍尔元件可以平行偏置,以提供整个零偏压耗尽层用于隔离。 p型霍尔元件的输出可以通过适当的电阻连接到n型外延霍尔元件的几何相应的输出。 输出信号可以在n型元件的输出处获取。 霍尔效应装置可以利用标准方法构建。
    • 6. 发明授权
    • Power supply with programmable fuse for mode selection
    • 带可编程保险丝的电源供模式选择
    • US07446593B2
    • 2008-11-04
    • US11006245
    • 2004-12-07
    • Wayne T. KilianJeffrey S. HallRyan R. FurioJason M. Chilcote
    • Wayne T. KilianJeffrey S. HallRyan R. FurioJason M. Chilcote
    • H01H37/76
    • G05F3/30
    • A voltage regulator operable as a voltage follower while a fusible link is closed and in a regulated voltage mode when the fusible link becomes open. The voltage regulator can be formed on monolithic semiconductor chips. Patterned thin films including aluminum and nickel-iron, and aluminum and polycrystalline silicon, comprise the fusible link. With the fusible link closed, the voltage regulator output is an analog of positive polarity variable voltage levels at the regulator input. Systems powered by the voltage regulator are allowed to be programmed until system programming requiring variable voltage levels is complete. Afterwards, a negative polarity voltage is applied to the regulator input causing a large current to pass through the fusible link once the system programming is completed. Current thereby causes the fusible link to become opened and enables the voltage regulator to begin operating at a regulated voltage in response to positive voltage input.
    • 一个电压调节器可操作为电压跟随器,同时可熔链路处于闭合状态,并且当熔丝断开时处于稳压电压模式。 电压调节器可以形成在单片半导体芯片上。 包括铝和镍 - 铁以及铝和多晶硅的图案化薄膜包括可熔链。 在熔断管关闭的情况下,稳压器输出是稳压器输入端的正极性可变电压电平的模拟量。 允许由电压调节器供电的系统被编程,直到需要可变电压电平的系统编程完成为止。 之后,一旦完成了系统编程,则负极性电压被施加到调节器输入端,导致大的电流通过熔丝。 因此,电流使得可熔链路变得断开,并且使得电压调节器响应于正电压输入而以调节的电压开始工作。
    • 10. 发明申请
    • Flow sensor transducer with dual spiral wheatstone bridge elements
    • 具有双螺旋惠斯通电桥元件的流量传感器传感器
    • US20070295082A1
    • 2007-12-27
    • US11448356
    • 2006-06-06
    • Wayne T. Kilian
    • Wayne T. Kilian
    • G01F1/68
    • G01F1/6845G01F1/692
    • A flow sensor transducer can measure fluid flow rates as a fluid flows though a channel and under an air bridge. Resistive thermal devices (RTDs) and a heater are on top of the air bridge with two RTDs upstream of the heater and two downstream. The RTDs can be connected in a Wheatstone bridge configuration. A magnetoresistive material that changes its electrical resistance based on its temperature can be used to form the RTDs. The temperature response of magnetoresistive materials, however, can change due to magnetic fields and to the material's magnetic history. Forming the RTDs into a dual spiral structure minimizes the effect of magnetic fields. As such, a magnetoresistive material such as permalloy can be used instead of an expensive material such a platinum. The resulting flow sensor transducer can be formed using standard semiconductor processing techniques and is less expensive than sensors containing platinum.
    • 当流体流过通道并在空气桥下时,流量传感器可以测量流体流速。 电阻式热装置(RTD)和加热器位于空气桥顶部,两个RTD位于加热器上游,两个下游。 RTD可以连接在惠斯登电桥配置中。 可以使用根据其温度改变其电阻的磁阻材料来形成RTD。 然而,磁阻材料的温度响应可能由于磁场和材料的磁性历史而变化。 将RTD形成双螺旋结构使磁场的影响最小化。 因此,可以使用诸如坡莫合金的磁阻材料代替诸如铂的昂贵材料。 所得到的流量传感器传感器可以使用标准半导体处理技术形成,并且比含有铂的传感器便宜。