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    • 4. 发明授权
    • Monolithic light-emitting diode and modulator
    • 单片发光二极管和调制器
    • US3975751A
    • 1976-08-17
    • US507454
    • 1974-09-19
    • Anthony John Springthorpe
    • Anthony John Springthorpe
    • G02F1/015H01L27/15H01L31/12H01L31/16
    • H01L31/125G02F1/015H01L27/15
    • For a reversed bias double heterostructure diodes, particularly GaAs diodes, electroabsorption can be obtained with reverse bias and light emission can be obtained with forward bias. However bulk absorption is large at wavelengths close to the band edge, where light emission occurs. Thus light emission through a modulator at zero bias is low. By providing for the light emulsion to be at a larger wavelength than that corresponding to the band edge high modulation efficiencies can be obtained. This is achieved by suitably doping the emitter differently as compared with the modulator so that light emission occurs at wavelengths greater than that at the fundamental energy gap.
    • 对于反向偏置双异质结构二极管,特别是GaAs二极管,可以通过反向偏置获得电吸收,并且可以以正向偏压获得发光。 然而,在发生发光的带边缘附近的波长处,体积吸收较大。 因此,在零偏压下通过调制器的发光是低的。 通过将光乳剂设置在比对应于带边缘的波长更大的波长上,可以获得高调制效率。 这通过与调制器相比不同地适当地掺杂发射器来实现,使得发光在大于基本能隙处的波长处发生。