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1. 发明申请

US20100213406A1 Internal gettering by metal alloy clusters 审中-公开
标题翻译：金属合金集团内部吸气
公开(公告)号：US20100213406A1
公开(公告)日：2010-08-26
申请号：US12798956
申请日：2010-04-14
申请人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Matthew A. Marcus , Eicke R. Weber
发明人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Matthew A. Marcus , Eicke R. Weber
IPC分类号： H01J7/18
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
摘要翻译：本发明涉及通过金属合金簇对半导体中杂质的内部吸杂。特别地，在硅中形成金属间簇，这种簇包含两个或多个过渡金属物质。这样的簇具有低于主体材料的熔融温度，并且显示出在吸收硅中的杂质并将其收集到隔离的，较不有害的位置中是特别有效的。还描述了一些金属合金簇的新型组合物。

2. 发明授权

US07763095B2 Internal gettering by metal alloy clusters 失效
公开(公告)号：US07763095B2
公开(公告)日：2010-07-27
申请号：US11447223
申请日：2006-06-05
申请人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Mathew A. Marcus , Eicke R. Weber
发明人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Mathew A. Marcus , Eicke R. Weber
IPC分类号： C22B43/00 , C22C19/03 , H01L21/26
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

3. 发明授权

US07569941B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US07569941B2
公开(公告)日：2009-08-04
申请号：US11645241
申请日：2006-12-22
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01L29/201
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

4. 发明授权

US07074697B2 Doping-assisted defect control in compound semiconductors 有权
标题翻译：化合物半导体掺杂辅助缺陷控制
公开(公告)号：US07074697B2
公开(公告)日：2006-07-11
申请号：US10706610
申请日：2003-11-12
申请人： Petra Specht , Eicke R. Weber , Todd Russell Weatherford
发明人： Petra Specht , Eicke R. Weber , Todd Russell Weatherford
IPC分类号： H01L21/20
CPC分类号： C30B29/42 , C30B23/002 , H01L21/02381 , H01L21/02395 , H01L21/02538 , H01L21/02546 , H01L21/02579 , H01L21/02631
摘要： The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.
摘要翻译：本发明涉及制备具有受体掺杂的III-V薄膜外延层和其他受体掺杂的化合物，其中受体热稳定外延层，稳定天然掺入的天然缺陷群体，并且在退火之后维持外延层的有益性质与其它有利效果之间。特别地，其中受体浓度类似于（但不超过）生长材料中的瑕疵缺陷的平衡掺杂显示出在提供热稳定性，高电阻率和超短时捕获时间方面特别有利。具体来说，具有平衡的Be掺杂的LT-GaAs外延层的MBE生长被详细描述。生长条件极大地提高了材料的再现性（即加工装置的产量）。如果生长条件被准确地再现，这种生长技术可以转移到其他III-V材料。本文生产的材料还显示出重复性，可靠性和辐射硬化的优点。

5. 发明授权

US06996147B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US06996147B2
公开(公告)日：2006-02-07
申请号：US10112698
申请日：2002-03-29
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01S5/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

6. 发明授权

US06563144B2 Process for growing epitaxial gallium nitride and composite wafers 失效
标题翻译：用于生长外延氮化镓和复合晶片的工艺
公开(公告)号：US06563144B2
公开(公告)日：2003-05-13
申请号：US09824843
申请日：2001-04-02
申请人： Eicke R. Weber , Sudhir G. Subramanya , Yihwan Kim , Joachim Kruger
发明人： Eicke R. Weber , Sudhir G. Subramanya , Yihwan Kim , Joachim Kruger
IPC分类号： H01L31072
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02491 , H01L21/0254 , Y10S438/938
摘要： A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of &mgr;>400 cm2/Vs for an electron background concentration of 4×1017 cm−3.
摘要翻译：提出了一种在晶格失配衬底上生长外延III族金属氮化物薄膜的新型生长工艺。在c面蓝宝石衬底上使用纯金属Ga缓冲层的外延GaN层的质量改进已被证明是可行的。 X射线摇摆曲线结果表明，这些层具有优异的结构性能。对于电子背景浓度为4×10 17 cm -3，电子霍尔迁移率增加到mu> 400cm 2 / Vs的极高值。

7. 发明授权

US07834264B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
标题翻译：制造纳米结构和纳米线的方法和由其制造的器件
公开(公告)号：US07834264B2
公开(公告)日：2010-11-16
申请号：US11645236
申请日：2006-12-22
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： H01L35/00 , H01L35/02 , H01L35/12
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
摘要翻译：具有小于约200nm的均匀直径的一维纳米结构。这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

8. 发明授权

US06929867B2 Hafnium nitride buffer layers for growth of GaN on silicon 失效
标题翻译：用于在硅上生长GaN的氮化铪缓冲层
公开(公告)号：US06929867B2
公开(公告)日：2005-08-16
申请号：US10439952
申请日：2003-05-16
申请人： Robert D. Armitage , Eicke R. Weber
发明人： Robert D. Armitage , Eicke R. Weber
IPC分类号： C30B23/02 , H01L21/20 , B21D39/00 , B32B15/04
CPC分类号： H01L21/02381 , C30B23/02 , C30B29/38 , H01L21/02439 , H01L21/02516 , H01L21/0254 , Y10T428/12542 , Y10T428/12576
摘要： Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.
摘要翻译：使用氮化铪缓冲层，在（111）和（001）硅衬底上通过等离子体辅助分子束外延生长氮化镓。在（111）和（001）HfN / Si表面上获得纤锌矿GaN外延层，无裂纹厚度高达1.2 m。然而，（001）表面上的生长导致几乎无应力的膜，这表明可以获得更厚的无裂纹层。

9. 发明授权

US09881999B2 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom 有权
公开(公告)号：US09881999B2
公开(公告)日：2018-01-30
申请号：US12488310
申请日：2009-06-19
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： B32B5/02 , B32B9/00 , H01L29/06 , B82Y10/00 , B82Y20/00 , G02B6/10 , H01L21/02 , H01L23/00 , H01L29/12 , H01L31/0352 , H01L33/06 , H01L33/24 , H01L35/00 , H01L41/18 , H01L41/09 , H01L33/18 , H01S5/34
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

10. 发明申请

US20100003516A1 METHODS OF FABRICATING NANOSTRUCTURES AND NANOWIRES AND DEVICES FABRICATED THEREFROM 有权
标题翻译：制造纳米结构的方法和纳米结构及其制备的器件
公开(公告)号：US20100003516A1
公开(公告)日：2010-01-07
申请号：US12488310
申请日：2009-06-19
申请人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
发明人： Arun Majumdar , Ali Shakouri , Timothy D. Sands , Peidong Yang , Samuel S. Mao , Richard E. Russo , Henning Feick , Eicke R. Weber , Hannes Kind , Michael Huang , Haoquan Yan , Yiying Wu , Rong Fan
IPC分类号： B32B5/02 , B32B9/00 , B32B15/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G02B6/107 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02554 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L24/45 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/125 , H01L31/0352 , H01L33/06 , H01L33/18 , H01L33/24 , H01L35/00 , H01L41/094 , H01L41/18 , H01L41/183 , H01L2224/45565 , H01L2224/45599 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01S5/341 , H01S5/3412 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/951 , Y10T428/24994 , Y10T428/249949 , Y10T428/29 , Y10T428/2913 , Y10T428/2916 , Y10T428/292 , Y10T428/2933 , Y10T428/2958 , Y10T428/2973 , Y10T428/298 , H01L2924/00011 , H01L2924/00 , H01L2224/48
摘要： One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
摘要翻译：具有小于约200nm的均匀直径的一维纳米结构。这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

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