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    • 1. 发明授权
    • Repairing damage to low-k dielectric materials using silylating agents
    • 使用硅烷化剂修复对低k电介质材料的损坏
    • US07709371B2
    • 2010-05-04
    • US10940682
    • 2004-09-15
    • Anil S. BhanapTeresa A. RamosNancy IwamotoRoger Y. LeungAnanth Naman
    • Anil S. BhanapTeresa A. RamosNancy IwamotoRoger Y. LeungAnanth Naman
    • H01L21/4763H01L21/302H01L21/31
    • H01L21/31058H01L21/02203H01L21/02216H01L21/02282H01L21/3122H01L21/76801
    • A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.
    • 用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。 这些膜在集成电路的制造中用作绝缘材料,以确保这些膜中的低和稳定的介电性能。 该方法阻止了这些膜中应力诱发的空隙的形成。 通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽,以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。 之后通过通孔和沟槽填充金属并进行退火处理。 在将薄膜进行蚀刻剂或灰化试剂之后,但在进行退火处理之前,使薄膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质薄膜的疏水性。