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1. 发明授权

US09199982B2 Heterocyclylamines as PI3K inhibitors 有权
标题翻译：杂环胺作为PI3K抑制剂
公开(公告)号：US09199982B2
公开(公告)日：2015-12-01
申请号：US13601349
申请日：2012-08-31
申请人： Yun-Long Li , Andrew P. Combs , Eddy W. Yue , Brent Douty , Song Mei
发明人： Yun-Long Li , Andrew P. Combs , Eddy W. Yue , Brent Douty , Song Mei
IPC分类号： C07D471/04 , C07D487/04
CPC分类号： A61K31/519 , C07D471/04 , C07D487/04 , C07D519/00
摘要： The present invention provides heterocyclylamine derivatives of Formula I: wherein the variables are defined herein, that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
摘要翻译：本发明提供式I的杂环基胺衍生物，其中本文所定义的变量，其调节磷酸肌醇3-激酶（PI3K）的活性，并且可用于治疗与PI3Ks的活性相关的疾病，包括例如炎症性疾病，基于免疫的疾病，癌症和其他疾病。

2. 发明授权

US09108984B2 Substituted diamino-pyrimidine and diamino-pyridine derivatives as PI3K inhibitors 有权
标题翻译：取代的二氨基 - 嘧啶和二氨基 - 吡啶衍生物作为PI3K抑制剂
公开(公告)号：US09108984B2
公开(公告)日：2015-08-18
申请号：US14005120
申请日：2012-03-13
申请人： Andrew P. Combs , Yun-Long Li , Song Mei , Eddy W. Yue
发明人： Andrew P. Combs , Yun-Long Li , Song Mei , Eddy W. Yue
IPC分类号： A61K31/498 , C07D513/04 , C07D403/12 , C07D401/12 , A61K31/519
CPC分类号： C07D513/04 , A61K31/498 , A61K31/519 , C07D401/12 , C07D403/12
摘要： The present invention provides substituted diamino-pyrimidine and substituted diamino-pyridine derivatives of Formula I; wherein X, Y, R1, R2, and Ar are defined herein, that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
摘要翻译：本发明提供取代的二氨基 - 嘧啶和式I的取代的二氨基 - 吡啶衍生物; 其中X，Y，R 1，R 2和Ar如本文所定义，其调节磷酸肌醇3-激酶（PI3K）的活性，并且可用于治疗与PI3Ks的活性相关的疾病，包括例如炎症性疾病，免疫基于疾病，癌症和其他疾病。

3. 发明授权

US09126948B2 Pyrimidine-4,6-diamine derivatives as PI3K inhibitors 有权
标题翻译：嘧啶-4,6-二胺衍生物作为PI3K抑制剂
公开(公告)号：US09126948B2
公开(公告)日：2015-09-08
申请号：US14007061
申请日：2012-03-23
申请人： Andrew P. Combs , Yun-Long Li , Eddy W. Yue , Song Mei
发明人： Andrew P. Combs , Yun-Long Li , Eddy W. Yue , Song Mei
IPC分类号： A61K31/505 , C07D239/48 , C07D401/12 , C07D403/12 , C07C53/18
CPC分类号： C07D239/48 , A61K31/505 , C07C53/18 , C07D401/12 , C07D403/12
摘要： The present invention provides pyrimidine-4,6-diamine derivatives of Formula (I): wherein the variables are defined herein, that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
摘要翻译：本发明提供式（I）的嘧啶-4,6-二胺衍生物：其中本文所定义的变量调节磷酸肌醇3-激酶（PI3K）的活性，并且可用于治疗与 PI3Ks包括例如炎症性疾病，基于免疫的疾病，癌症和其它疾病。

4. 发明申请

US20140066448A1 SUBSTITUTED DIAMINO-PYRIMIDINE AND DIAMINO-PYRIDINE DERIVATIVES AS PI3K INHIBITORS 有权
标题翻译：作为PI3K抑制剂的替代二氨基吡啶和二氨基吡啶衍生物
公开(公告)号：US20140066448A1
公开(公告)日：2014-03-06
申请号：US14005120
申请日：2012-03-13
申请人： Andrew P. Combs , Yun-Long Li , Song Mei , Eddy W. Yue
发明人： Andrew P. Combs , Yun-Long Li , Song Mei , Eddy W. Yue
IPC分类号： C07D513/04 , C07D403/12
CPC分类号： C07D513/04 , A61K31/498 , A61K31/519 , C07D401/12 , C07D403/12
摘要： The present invention provides substituted diamino-pyrimidine and substituted diamino-pyridine derivatives of Formula I; wherein X, Y, R1, R2, and Ar are defined herein, that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
摘要翻译：本发明提供取代的二氨基 - 嘧啶和式I的取代的二氨基 - 吡啶衍生物; 其中X，Y，R 1，R 2和Ar如本文所定义，其调节磷酸肌醇3-激酶（PI3K）的活性，并且可用于治疗与PI3Ks的活性相关的疾病，包括例如炎症性疾病，免疫基于疾病，癌症和其他疾病。

5. 发明申请

US20140057912A1 PYRIMIDINE-4,6-DIAMINE DERIVATIVES AS PI3K INHIBITORS 有权
标题翻译：作为PI3K抑制剂的吡哩啶-4,6-二胺衍生物
公开(公告)号：US20140057912A1
公开(公告)日：2014-02-27
申请号：US14007061
申请日：2012-03-23
申请人： Andrew P. Combs , Yun-Long Li , Eddy W. Yue , Song Mei
发明人： Andrew P. Combs , Yun-Long Li , Eddy W. Yue , Song Mei
IPC分类号： C07D239/48 , C07C53/18 , C07D403/12 , C07D401/12
CPC分类号： C07D239/48 , A61K31/505 , C07C53/18 , C07D401/12 , C07D403/12
摘要： The present invention provides pyrimidine-4,6-diamine derivatives of Formula (I): wherein the variables are defined herein, that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
摘要翻译：本发明提供式（I）的嘧啶-4,6-二胺衍生物：其中本文所定义的变量调节磷酸肌醇3-激酶（PI3K）的活性，并且可用于治疗与 PI3Ks包括例如炎症性疾病，基于免疫的疾病，癌症和其它疾病。

6. 发明申请

US20130059835A1 HETEROCYCLYLAMINES AS PI3K INHIBITORS 有权
标题翻译：杂环化合物作为PI3K抑制剂
公开(公告)号：US20130059835A1
公开(公告)日：2013-03-07
申请号：US13601349
申请日：2012-08-31
申请人： Yun-Long Li , Wenqing Yao , Andrew P. Combs , Eddy W. Yue , Song Mei , Wenyu Zhu , Joseph Glenn , Thomas P. Maduskuie, JR. , Richard B. Sparks , Brent Douty
发明人： Yun-Long Li , Wenqing Yao , Andrew P. Combs , Eddy W. Yue , Song Mei , Wenyu Zhu , Joseph Glenn , Thomas P. Maduskuie, JR. , Richard B. Sparks , Brent Douty
IPC分类号： A61K31/519 , C07D471/04 , A61K31/437 , A61K31/5377 , A61P37/00 , A61P19/02 , A61P9/10 , A61P17/06 , A61P19/08 , A61P9/00 , A61P29/00 , A61P1/00 , A61P21/04 , A61P25/00 , A61P1/18 , A61P13/12 , A61P35/00 , A61P35/02 , A61P11/00 , C07D487/04
CPC分类号： A61K31/519 , C07D471/04 , C07D487/04 , C07D519/00
摘要： The present invention provides heterocyclylamine derivatives of Formula I: wherein the variables are defined herein, that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
摘要翻译：本发明提供式I的杂环基胺衍生物，其中本文所定义的变量，其调节磷酸肌醇3-激酶（PI3K）的活性，并且可用于治疗与PI3Ks的活性相关的疾病，包括例如炎症性疾病，基于免疫的疾病，癌症和其他疾病。

7. 发明授权

US08536639B2 I-shape floating gate for flash memory device and fabricating the same 有权
标题翻译：用于闪存器件的I形浮动栅极和制造它们
公开(公告)号：US08536639B2
公开(公告)日：2013-09-17
申请号：US13498585
申请日：2011-11-30
申请人： Yimao Cai , Song Mei , Ru Huang
发明人： Yimao Cai , Song Mei , Ru Huang
IPC分类号： H01L29/788 , H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28273
摘要： The present invention discloses a floating gate structure of a flash memory device and a method for fabricating the same, which relates to a nonvolatile memory in a manufacturing technology of an ultra-large-scaled integrated circuit. In the invention, by modifying a manufacturing of a floating gate in the a standard process for the flash memory, that is, by adding three steps of deposition, two steps of etching and one step of CMP, an -shaped floating gate is formed. In addition to these steps, all the other steps are the same as those of the standard process for the flash memory process. By the invention, a coupling ratio may be improved effectively and a crosstalk between adjacent devices may be lowered, without adding additional photomasks and barely increasing a process complexity, which are very important to improve programming speed and reliability.
摘要翻译：本发明公开了一种闪存器件的浮动栅极结构及其制造方法，涉及超大规模集成电路的制造技术中的非易失性存储器。在本发明中，通过在闪速存储器的标准处理中，即通过添加三个步骤的沉积，两个步骤的蚀刻和CMP的一个步骤来修改浮动栅极的制造，形成一个形状的浮动栅极。除了这些步骤之外，所有其他步骤与闪存过程的标准过程相同。通过本发明，可以有效地改善耦合比，并且可以降低相邻器件之间的串扰，而不增加额外的光掩模，并且几乎不增加工艺复杂性，这对于提高编程速度和可靠性非常重要。

8. 发明申请

US20130099300A1 Floating Gate Structure of Flash Memory Device and Method for Fabricating the Same 有权
标题翻译：闪存设备的浮动门结构及其制造方法
公开(公告)号：US20130099300A1
公开(公告)日：2013-04-25
申请号：US13498585
申请日：2011-11-30
申请人： Yimao Cai , Song Mei , Ru Huang
发明人： Yimao Cai , Song Mei , Ru Huang
IPC分类号： H01L29/788 , H01L21/283
CPC分类号： H01L21/28273
摘要： The present invention discloses a floating gate structure of a flash memory device and a method for fabricating the same, which relates to a nonvolatile memory in a manufacturing technology of an ultra-large-scaled integrated circuit. In the invention, by modifying a manufacturing of a floating gate in the a standard process for the flash memory, that is, by adding three steps of deposition, two steps of etching and one step of CMP, an I-shaped floating gate is formed. In addition to these steps, all the other steps are the same as those of the standard process for the flash memory process. By the invention, a coupling ratio may be improved effectively and a crosstalk between adjacent devices may be lowered, without adding additional photomasks and barely increasing a process complexity, which are very important to improve programming speed and reliability.
摘要翻译：本发明公开了一种闪存器件的浮动栅极结构及其制造方法，涉及超大规模集成电路的制造技术中的非易失性存储器。在本发明中，通过在闪速存储器的标准处理中，即通过添加三个步骤的沉积，两个步骤的蚀刻和CMP的一个步骤来修改浮动栅极的制造，形成I形的浮动栅极。除了这些步骤之外，所有其他步骤与闪存过程的标准过程相同。通过本发明，可以有效地改善耦合比，并且可以降低相邻器件之间的串扰，而不增加额外的光掩模，并且几乎不增加工艺复杂性，这对于提高编程速度和可靠性非常重要。

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