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1. 发明申请

US20160181093A1 III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER 审中-公开
标题翻译：具有保护顶层的多层缓冲层的III-N外延
公开(公告)号：US20160181093A1
公开(公告)日：2016-06-23
申请号：US14576500
申请日：2014-12-19
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
IPC分类号： H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02483 , H01L21/02505 , H01L21/02516 , H01L21/0254
摘要： A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.
摘要翻译：一种在硅衬底上生长III-N材料的方法，包括以下步骤：在硅衬底上外延生长REO材料的缓冲层，在衬底的表面上外延生长REN材料层，并外延生长薄的保护层的REO在REN材料层的表面上。底物和结构可以方便地转移到另一种生长机器中，其中进行以下步骤：将REO保护层原位转化或修饰为具有氮处理的REN层，并在其上外延生长III-N材料层改性保护层。

2. 发明授权

US09173649B2 Low profile distractor apparatuses 有权
标题翻译：低调牵引器装置
公开(公告)号：US09173649B2
公开(公告)日：2015-11-03
申请号：US13435022
申请日：2012-03-30
申请人： Andrew Clark , David Chella , Jesse Drake
发明人： Andrew Clark , David Chella , Jesse Drake
IPC分类号： A61B17/02 , A61B17/60 , A61B17/66 , A61F5/042 , A61F5/04 , A61F5/37
CPC分类号： A61B17/025 , A61B17/60 , A61B17/66 , A61B2017/0268 , A61B2017/0275 , A61F5/04 , A61F5/042 , A61F5/3776
摘要： Embodiments of low profile distractor apparatuses are disclosed. The distractor apparatuses generally comprise a mounting body, a tensioning mechanism coupled to the mounting body and a distractor arm coupled to the tensioning mechanism and pivotally coupled to the mounting body for rotation relative to the mounting body. The tensioning axis of the tensioning mechanism is non-coaxial with an effector axis of the distractor arm and a distraction force applied with the distractor arm is translated to the effector axis. This enables the distractor apparatus to be positioned relative to a patient such that the tensioning mechanism is offset from the long axis of the limb of the patient thereby facilitating improved access to the distal portions of the limb.
摘要翻译：公开了低剖面牵引装置的实施例。牵引装置通常包括安装体，联接到安装体的张紧机构和联接到张紧机构的牵引臂，枢转地联接到安装体以相对于安装体旋转。张紧机构的张紧轴线与牵引臂的效应器轴线不同轴，并且用牵引臂施加的牵引力平移到效应器轴线。这使得牵引器装置能够相对于患者定位，使得张紧机构偏离患者肢体的长轴线，从而便于改善对肢体的远端部分的接近。

3. 发明授权

US08835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform 有权
标题翻译： IIIOxNy在单晶SOI衬底和IIIn生长平台上
公开(公告)号：US08835955B2
公开(公告)日：2014-09-16
申请号：US13221474
申请日：2011-08-30
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L33/60 , H01L29/786 , H01L33/00 , H01L29/78 , H01L21/762 , H01L21/02 , H01L33/12 , H01L33/46
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

4. 发明申请

US20140231818A1 AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE 有权
标题翻译： GaN / REO /硅衬底结构上的AlN电极
公开(公告)号：US20140231818A1
公开(公告)日：2014-08-21
申请号：US13772169
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶稀土氧化物层。稀土氧化物与硅衬底的表面基本上晶格匹配。第一层III-N材料位于稀土氧化物层的表面上。氮化铝（AlN）的层间位于III-N材料的第一层的表面上，并且在氮化铝层间的表面上设置附加的III-N层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。在最终的III-N层上生长AlN的覆盖层，并且在AlN覆盖层上生长具有LED结构和HEMT结构之一的III-N层材料。

5. 发明申请

US20140231817A1 III-N MATERIAL GROWN ON ALO/ALN BUFFER ON SI SUBSTRATE 有权
标题翻译： III-N材料在基板上的ALO / ALN缓冲器上
公开(公告)号：US20140231817A1
公开(公告)日：2014-08-21
申请号：US13772126
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L29/205 , H01L21/02
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface. A first layer of III-N material is positioned on the upper surface of the buffer. An inter-layer of aluminum nitride (AlN) is positioned on the first III-N layer and an additional layer of III-N material is positioned on the inter-layer. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶缓冲器。缓冲器基本上与硅衬底的表面晶格匹配，并且包括邻近衬底的氮氧化铝和与上表面相邻的氮化铝。第一层III-N材料位于缓冲器的上表面上。氮化铝（AlN）的层间位于第一III-N层上，并且在层之间设置附加的III-N材料层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

6. 发明授权

US08802149B2 Systems and processes for spray drying hydrophobic and hydrophilic components 有权
标题翻译：用于喷雾干燥疏水和亲水组分的系统和方法
公开(公告)号：US08802149B2
公开(公告)日：2014-08-12
申请号：US12469634
申请日：2009-05-20
申请人： Marc S. Gordon , Andrew Clark , Thomas K. Brewer
发明人： Marc S. Gordon , Andrew Clark , Thomas K. Brewer
IPC分类号： A61K9/14 , A61K9/12
CPC分类号： A61K9/0075 , A61K9/1611 , A61K9/1623 , A61K31/12 , A61K31/353 , A61K31/355 , A61K31/557 , A61K31/56 , A61K31/573 , A61K31/59 , A61K31/7012 , A61K31/715
摘要： Methods for preparing dry powders having hydrophobic and hydrophilic components comprise combining solutions of the components and spray drying them simultaneously in a spray dryer. The hydrophilic and hydrophobic component are separately dissolved in separate solvents and directed simultaneously through a nozzle, usually a coaxial nozzle, into the spray dryer. The method provides dry powders having relatively uniform characteristics.
摘要翻译：制备具有疏水性和亲水性成分的干粉的方法包括组合该组分溶液并在喷雾干燥器中同时喷雾干燥它们。亲水和疏水组分分别溶解在单独的溶剂中并同时通过喷嘴（通常为同轴喷嘴）引入喷雾干燥器。该方法提供具有相对均匀特性的干粉。

7. 发明授权

US08794010B2 Laser cooling of modified SOI wafer 有权
标题翻译：改性SOI晶片的激光冷却
公开(公告)号：US08794010B2
公开(公告)日：2014-08-05
申请号：US12966394
申请日：2010-12-13
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/30 , H01S3/034 , F25B23/00 , F25B21/00
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
摘要翻译：激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层绝缘体（SOI）器件。导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

8. 发明授权

US08680507B1 A1N inter-layers in III-N material grown on DBR/silicon substrate 失效
标题翻译：在DBR /硅衬底上生长的III-N材料中的AlN层间
公开(公告)号：US08680507B1
公开(公告)日：2014-03-25
申请号：US13742612
申请日：2013-01-16
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/10 , H01L33/12 , H01L29/778
CPC分类号： H01L33/007 , H01L29/155 , H01L29/2003 , H01L29/7787 , H01L33/10 , H01L33/12 , H01L33/32
摘要： A DBR/gallium nitride/aluminum nitride base grown on a silicon substrate includes a Distributed Bragg Reflector (DBR) positioned on the silicon substrate. The DBR is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the DBR, an inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的DBR /氮化镓/氮化铝基底包括位于硅衬底上的分布式布拉格反射器（DBR）。 DBR基本上与硅衬底的表面晶格匹配。第一层III-N材料位于DBR的表面上，氮化铝层（AlN）的层间位于III-N材料的第一层的表面上，并且附加的III-N材料层位于氮化铝层间的表面上。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

9. 发明授权

US08664735B2 IR sensor using REO up-conversion 有权
标题翻译： IR传感器采用REO上转换
公开(公告)号：US08664735B2
公开(公告)日：2014-03-04
申请号：US13053285
申请日：2011-03-22
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , David L. Williams
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , David L. Williams
IPC分类号： H01L31/0232 , H01L31/055
CPC分类号： H01L31/02322 , G01J1/58 , G01J5/20 , H01L31/02327 , H01L31/103 , Y02E10/52
摘要： A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
摘要翻译：泵送传感器系统包括其上形成有第一层并且被掺杂用于第一类型传导的第一层和掺杂用于第二类型传导的第二层的衬底，由此第一和第二层以上转换波长形成硅光检测器。在第二层上形成三元稀土氧化物，并且与第二层匹配的晶格。氧化物是具有受控百分比的上转换组分和多数组分的结晶体氧化物。大多数组件对泵，感测或上转换波长中的任何一个不敏感，并且上转换组件被选择为响应于在泵处的接收能量和感测波长而在上转换波长处产生能量。氧化物层限定对泵浦波长敏感的光输入区域和对感测波长敏感的光输入区域。

10. 发明申请

US20140008644A1 OXYGEN ENGINEERED SINGLE-CRYSTAL REO TEMPLATE 有权
标题翻译：氧气工程单晶REO模板
公开(公告)号：US20140008644A1
公开(公告)日：2014-01-09
申请号：US13543093
申请日：2012-07-06
申请人： Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L29/38 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/02521
摘要： A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure.
摘要翻译：在硅衬底上形成模板的方法包括在硅衬底上外延生长单晶三元稀土氧化物的模板，并在模板上外延生长单晶半导体活性层。有源层具有立方晶体或六方晶体结构。在模板的外延生长期间，选择氧的分压，并且选择包含在三元稀土氧化物中的金属的比例以在与衬底的较低界面处的模板的晶体间距和结构相匹配并且匹配晶体间距以及在半导体活性层的晶体间距和结构的上界面处的模板的结构。模板生长期间的高氧分压产生稳定的立方晶体结构，低氧分压产生具有六方晶系结构的主峰。

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