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1. 发明申请

US20100244139A1 STRAINED-SILICON CMOS DEVICE AND METHOD 审中-公开
标题翻译：应变硅CMOS器件及方法
公开(公告)号：US20100244139A1
公开(公告)日：2010-09-30
申请号：US12797104
申请日：2010-06-09
申请人： Andres BRYANT , Qiqing OUYANG , Kern RIM
发明人： Andres BRYANT , Qiqing OUYANG , Kern RIM
IPC分类号： H01L29/78
CPC分类号： H01L21/823807 , H01L21/7624 , H01L21/823814 , H01L21/823864 , H01L29/66636 , H01L29/7843 , H01L29/7846 , H01L29/7848 , H01L29/7849
摘要： The present invention provides a semiconductor device and a method of forming thereof, in which a uniaxial strain is produced in the device channel of the semiconductor device. The uniaxial strain may be in tension or in compression and is in a direction parallel to the device channel. The uniaxial strain can be produced in a biaxially strained substrate surface by strain inducing liners, strain inducing wells or a combination thereof. The uniaxial strain may be produced in a relaxed substrate by the combination of strain inducing wells and a strain inducing liner. The present invention also provides a means for increasing biaxial strain with strain inducing isolation regions. The present invention further provides CMOS devices in which the device regions of the CMOS substrate may be independently processed to provide uniaxially strained semiconducting surfaces in compression or tension.
摘要翻译：本发明提供半导体器件及其形成方法，其中在半导体器件的器件沟道中产生单轴应变。单轴应变可以处于张力或压缩状态，并且在平行于装置通道的方向上。单轴应变可以通过应变诱导衬片，应变诱导孔或其组合在双轴应变衬底表面中产生。单轴应变可以通过应变诱导孔和应变诱导衬垫的组合在松弛的衬底中产生。本发明还提供了用应变诱导隔离区增加双轴应变的方法。本发明还提供了CMOS器件，其中可以独立地处理CMOS衬底的器件区域以提供压缩或张力的单轴应变半导体表面。

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