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    • 4. 发明授权
    • Efficiently implementing a plurality of finite state machines
    • 有效地实施多个有限状态机
    • US08566509B2
    • 2013-10-22
    • US12546772
    • 2009-08-25
    • Rolf K. FritzAndreas MullerThomas SchlipfDaniel Thiele
    • Rolf K. FritzAndreas MullerThomas SchlipfDaniel Thiele
    • G06F12/00G06F13/00
    • G06F9/30079G06F7/00
    • A method and program product for processing data by a pipeline of a single hardware-implemented virtual multiple instance finite state machine (VMI FSM). An input token of multiple input tokens is selected to enter a pipeline of the VMI FSM. The input token includes a reference to an FSM instance. In one embodiment, the reference is an InfiniBand QP number. After being received at the pipeline, a current state and context of the FSM instance are fetched from an array based on the reference and inserted into a field of the input token. A new state of the FSM instance is determined and an output token is generated. The new state and the output token are based on the current state, context, a first input value, and an availability of a resource. The new state of the first FSM instance is written to the array.
    • 一种用于通过单个硬件实现的虚拟多实例有限状态机(VMI FSM)的流水线处理数据的方法和程序产品。 选择多个输入令牌的输入令牌以进入VMI FSM的流水线。 输入令牌包括对FSM实例的引用。 在一个实施例中,参考是InfiniBand QP号。 在流水线接收之后,FSM实例的当前状态和上下文根据引用从数组中提取并插入到输入令牌的一个字段中。 确定FSM实例的新状态,并生成输出令牌。 新状态和输出令牌基于当前状态,上下文,第一个输入值和资源的可用性。 第一个FSM实例的新状态写入数组。
    • 7. 发明申请
    • Releasable Connection Arrangement for Two Rotationally Symmetrical Components
    • 两个旋转对称组件的可拆卸连接布置
    • US20080070704A1
    • 2008-03-20
    • US11942276
    • 2007-11-19
    • Andreas MullerMatthias Wangemann
    • Andreas MullerMatthias Wangemann
    • F16D1/116
    • F16L23/036F16B2200/506Y10T403/52
    • A releasable connection arrangement includes a first component, which has a collar projecting radially outwards with a first clamping surface and a first bearing surface and a socket disposed at an open end of a second component for retaining the collar by gripping round it axially. A second bearing surface is formed in the socket to co-operate with the first bearing surface. A groove is formed either in the first or in the second bearing surface to receive a seal. A second clamping surface is formed in the socket at an axial distance from the second bearing surface in which a number of ring wedge-shaped tensioning members which are distributed over the circumference and are disposed such that first wedge surfaces abut the first clamping surface and second wedge surfaces abut the second clamping surface.
    • 可释放的连接装置包括第一部件,其具有径向向外突出的凸缘,其具有第一夹紧表面和第一支承表面以及设置在第二部件的开口端的插座,用于通过将其轴向夹紧而保持套环。 第二支承表面形成在插座中以与第一支承表面配合。 在第一或第二支承表面中形成凹槽以接收密封。 第二夹紧表面在第二支承表面的轴向距离处形成在插座中,在第二支承表面中,多个环形楔形张紧构件分布在圆周上并且被布置成使得第一楔形表面邻接第一夹紧表面和第二夹紧表面 楔形表面邻接第二夹紧表面。
    • 10. 发明授权
    • Semiconductor for a resistive gas sensor having a high response speed
    • 具有高响应速度的电阻式气体传感器的半导体
    • US4988970A
    • 1991-01-29
    • US423445
    • 1989-09-28
    • Edelbert HafeleKarl-Heinz HardtlAndreas MullerUlrich Schonauer
    • Edelbert HafeleKarl-Heinz HardtlAndreas MullerUlrich Schonauer
    • G01N27/12C04B35/462G01N33/00
    • G01N27/12C04B35/462G01N33/0031
    • Semiconductors for resistive gas sensors or resistive semiconductor gas sensors with high speed of reaction are disclosed. These semiconductors are appropriate to measure the partial pressure of oxygen and reducing gases in any predetermined measurement range between 10.sup.-30 and about 1 bar or in the whole of this measurement range, their resistance changes being caused by a volume effect. In particular, these semiconductors have a layer less than 100 .mu.m thick, predetermined geometric structure and clearly marked marginal zones. A specially doped semiconductor composed of perowskit having the general formula A'.sub.x A.sub.1-x-Z1 B'.sub.y B.sub.1-y-Z2 O.sub.3 is applied on a substrate with a paste of an organic base material by a thick film technique. By adding or removing at least one element or by using two different semiconductors the characteristic curve is clearly traced.
    • PCT No.PCT / DE88 / 00418 Sec。 371日期:1989年9月28日 102(e)日期1989年9月28日PCT提交1989年7月7日PCT公布。 出版物WO89 / 00686 日本1989年1月26日。公开了具有高反应速度的电阻式气体传感器或电阻式半导体气体传感器的半导体。 这些半导体适合于在10-30至约1巴之间的任何预定测量范围内或在整个测量范围内测量氧气和还原气体的分压,其电阻变化是由体积效应引起的。 特别地,这些半导体具有厚度小于100μm的层,预定的几何结构和明显的边缘区域。 通过厚膜技术将具有通式A'xA1-x-Z1B'yB1-y-Z2O3的由perowskit构成的特殊掺杂半导体涂覆在具有有机基材的浆料的基板上。 通过添加或去除至少一个元素或通过使用两个不同的半导体,特征曲线被清楚地描绘。