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    • 1. 发明申请
    • Glass tube for technical applications and process for the production thereof
    • 用于技术应用的玻璃管及其生产方法
    • US20060141181A1
    • 2006-06-29
    • US11296798
    • 2005-12-07
    • Andreas LangsdorfFrank BuellesfeldUlrich LangeMartin Zoettl
    • Andreas LangsdorfFrank BuellesfeldUlrich LangeMartin Zoettl
    • C03B9/16C03B29/00B28B11/00
    • C03B23/047C03B17/04C03B19/02C03B40/04H01H1/66H01H11/005Y10T428/131
    • The invention relates to glass tubes for technical applications, especially for electrical or magnetic components, such as reed switches for example. According to a first embodiment, the glass tube has an inner bore (23) and at least one cross-sectional constriction (X) whereby the relationship applicable between the respective cross-sectional constriction (X) and the diameter (d) of the circumference of inner bore (23) is: x greater than or equal to 0.02*d, more preferably x greater than or equal to 0.1*d. According to a further embodiment, the glass tube has at least one inner bore with at least one inner edge, wherein the radius of curvature of the respective inner edge is less than or equal to 0.1 mm and preferably less than or equal to 0.03 mm. The glass tube is used as a preform for a subsequent redrawing process. The preform is formed by casting a molten glass into a shaft in the interior of which is located a shaping means for defining the inner bore. In this case a gas cushion prevents direct contact of the molten glass with the inner circumferential wall of the shaft and/or the outer circumferential wall of the shaping means.
    • 本发明涉及用于技术应用的玻璃管,特别是用于诸如簧片开关的电气或磁性部件。 根据第一实施例,玻璃管具有内孔(23)和至少一个横截面收缩(X),由此可应用于各截面收缩(X)和圆周的直径(d)之间的关系 的内孔(23)为:x大于或等于0.02 * d,更优选x大于或等于0.1 * d。 根据另一实施例,玻璃管具有至少一个具有至少一个内边缘的内孔,其中相应内边缘的曲率半径小于或等于0.1mm,优选小于或等于0.03mm。 玻璃管用作预型件用于随后的重画工艺。 预成型件通过将熔融玻璃浇铸到轴内而形成,该轴位于用于限定内孔的成形装置的内部。 在这种情况下,气垫防止熔融玻璃与成形装置的轴的内周壁和/或外周壁的直接接触。
    • 4. 发明授权
    • Method for making globular bodies
    • 球状体的制备方法
    • US07377130B2
    • 2008-05-27
    • US10770311
    • 2004-02-02
    • Andreas LangsdorfFrank Buellesfeld
    • Andreas LangsdorfFrank Buellesfeld
    • C03B37/00
    • C03B40/04C03B19/102
    • The method of making globular or spherical bodies of optical quality includes filling receptacles (2) in a heat-resistant support (3) made of a porous material with glass gobs (1); conducting gas through the heat-resistant support so that a gas flow (4) passes through the support in a direction (14) opposite to a direction in which gravity acts; heating the heat-resistant support (3) to a temperature at which the glass gobs (1) have a viscosity of up to about 106 poise; maintaining the support (3) at this temperature for a predetermined time interval; and then cooling the support (3) to ambient temperature while continuing to provide the gas flow (4) through the support (3).
    • 制造光学质量的球形或球形体的方法包括在由具有玻璃料滴(1)的多孔材料制成的耐热支撑件(3)中填充容器(2); 通过所述耐热支撑件传导气体,使得气流(4)沿与重力作用方向相反的方向(14)穿过所述支撑件; 将耐热载体(3)加热至玻璃料滴(1)的粘度高达约10 -6泊的温度; 在该温度下保持支撑件(3)预定的时间间隔; 然后将支撑件(3)冷却至环境温度,同时继续通过支撑件(3)提供气流(4)。
    • 6. 发明申请
    • Method for producing a monocrystalline or polycrystalline semiconductore material
    • 用于制造单晶或多晶半导体材料的方法
    • US20090158993A1
    • 2009-06-25
    • US12334646
    • 2008-12-15
    • Uwe SahrMatthias MuellerIngo SchwirtlichFrank-Thomas LentesFrank Buellesfeld
    • Uwe SahrMatthias MuellerIngo SchwirtlichFrank-Thomas LentesFrank Buellesfeld
    • C30B11/06
    • C30B11/003C30B11/04C30B29/06Y10T117/10
    • The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.
    • 本发明涉及通过定向凝固制造单晶或多晶半导体材料的方法,其中将块状半导体原料引入熔融坩埚中并在其中熔融并定向凝固,特别是使用垂直梯度冷冻法。 为了防止污染和损坏,半导体原料从熔融坩埚的上端熔化。 熔融材料向下流动,使得尚未熔化的半导体原料在熔融坩埚中逐渐下降。 在这种情况下,附加的半导体原料从熔化坩埚从上方补充到尚未熔化或不完全熔化的半导体原料区域上,以至少部分地补偿半导体原料的体积收缩 材料并增加坩埚的填充水平。 为了尽可能少地减少熔化时间并影响系统中的热条件,通过有目的地将热量引导到低于半导体原料的熔​​融温度的温度来加热待补充的半导体原料 并以加热状态引入容器。
    • 7. 发明申请
    • TOMOGRAMS FOR IMPLANT PLANNING
    • 植被计划的TOMOGRAMS
    • US20100296716A1
    • 2010-11-25
    • US12740360
    • 2008-09-18
    • Niels HanssenFrank Buellesfeld
    • Niels HanssenFrank Buellesfeld
    • G06K9/00
    • A61B90/36A61B6/14A61B2090/364A61B2090/3762A61C9/0046G06T7/0012G06T7/73G06T2207/10081G06T2207/30008G06T2207/30052
    • Method for creating and presenting layer images that are generated from a set of volume data, whereby the volume data are recorded with a tomographic recording device, for example with a “cone beam CT” device, and show the jaw area of a patient, whereby planning data are assigned to the volume data, and said planning data describe the position of an implant that is to be inserted into the jaw and that has an implant axis, whereby a coordinate system that is adapted to a panoramic curve or a panoramic surface is defined that is formed by the vectors u, v, and w that are orthogonal to one another, whereby for the creation and presentation of a layer image, a representational plane is selected that intersects an implant that is described by the planning data, whereby in a first case, the v vector is orthogonal to the panoramic surface and/or the panoramic curve, and the implant axis intersects in a reference point, whereby the reference point is selected as the origin of the coordinate system, whereby the w-vector that runs through the reference point is tilted in such a way that the implant axis lies in the v, w-plane, whereby the v, w-plane forms a first base plane and whereby a representational plane that is parallel to the first base plane is selected, whereby in a second case, the u vector intersects the implant axis in a reference point and is parallel to the tangent on the panoramic curve in the perpendicular point of the reference point to the panoramic curve, whereby the w-vector of the coordinate system is tilted in such a way that the implant axis lies in the u, w-plane, whereby the u, w-plane forms a second base plane and whereby a representational plane that is parallel to the second base plane is selected.
    • 用于创建和呈现从一组体积数据生成的层图像的方法,由此通过例如用“锥形束CT”装置用断层摄影记录装置记录体数据,并且显示患者的颌面积,由此 规划数据被分配给体积数据,并且所述规划数据描述将要插入到钳口中并且具有植入物轴线的植入物的位置,由此适应于全景曲线或全景表面的坐标系是 被定义为由彼此正交的向量u,v和w形成,由此为了创建和呈现层图像,选择与由规划数据描述的植入物相交的表示平面,由此在 第一种情况下,v矢量与全景表面和/或全景曲线正交,并且植入物轴线在参考点相交,由此选择参考点作为坐标系的原点 e系统,由此使穿过参考点的w向量以使得植入轴位于v,w平面中的方式倾斜,由此v,w平面形成第一基面,由此表示平面 选择平行于第一基面的第二基底平面,从而在第二种情况下,u矢量与植入轴在参考点相交,并且平行于参考点与全景曲线的垂直点上的全景曲线上的切线 ,由此坐标系的w向量以这样的方式倾斜,使得植入轴位于u,w平面中,由此u,w平面形成第二基面,由此形成平行于 选择第二个基面。