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    • 2. 发明授权
    • Integrated circuits, memory controller, and memory modules
    • 集成电路,存储器控制器和存储器模块
    • US07636258B2
    • 2009-12-22
    • US11955278
    • 2007-12-12
    • Andreas KuxDetlev RichterGert KoebernickJuergen EngelhardtSudhindra Prasad
    • Andreas KuxDetlev RichterGert KoebernickJuergen EngelhardtSudhindra Prasad
    • G11C16/00
    • G11C16/349G11C16/10G11C16/16G11C16/3495
    • In accordance with embodiments of the invention, there are provided integrated circuits, memory controller, a method for determining a level for programming or erasing a memory segment, and a method for determining a wear level score for a memory segment. In an embodiment of the invention, a method for determining a level for programming or erasing a memory segment is provided, wherein a first level for programming or erasing a memory segment is determined as a function of an initial program/erase level. Furthermore, a first updated level is determined for a subsequent program/erase operation of the memory segment and a second level for programming or erasing the memory segment subsequent to programming or erasing the memory segment is determined using the first level, wherein the second level is determined as a function of the first updated level.
    • 根据本发明的实施例,提供了集成电路,存储器控制器,用于确定用于编程或擦除存储器段的电平的方法,以及用于确定存储器段的磨损等级得分的方法。 在本发明的实施例中,提供了一种用于确定用于编程或擦除存储器段的电平的方法,其中用于编程或擦除存储器段的第一电平被确定为初始编程/擦除电平的函数。 此外,对于存储器段的随后的编程/擦除操作确定第一更新级别,并且使用第一级确定用于在编程或擦除存储器段之后编程或擦除存储器段的第二级,其中第二级是 确定为第一更新水平的函数。