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    • 3. 发明申请
    • SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
    • US20130146858A1
    • 2013-06-13
    • US13809946
    • 2011-07-19
    • Timo Meyer-FriedrichsenKnud ReuterAndreas ElschnerMarcus Halik
    • Timo Meyer-FriedrichsenKnud ReuterAndreas ElschnerMarcus Halik
    • H01L51/00
    • H01L51/0074C07D495/04C07F9/655354H01L51/0002H01L51/0558Y02E10/549Y02P70/521
    • The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
    • 6. 发明授权
    • Stabilised thiophene derivatives
    • 稳定的噻吩衍生物
    • US08420671B2
    • 2013-04-16
    • US12894952
    • 2010-09-30
    • Knud ReuterKlaus WussowUdo MerkerAndreas Elschner
    • Knud ReuterKlaus WussowUdo MerkerAndreas Elschner
    • A61K31/4468
    • C08K5/13C08G2261/3223C08K5/3435C08L65/00H01G11/48H01G11/56Y02E60/13Y10T29/43
    • The present invention relates to a stabilized monomer composition comprising at least 50 wt.-%, based on the total weight of the stabilized monomer composition, of a thiophene derivative monomer having the general formula (I) in which R1 and R2 stand, independently of one another, for hydrogen, for an optionally substituted C1-C20-alkyl group or C1-C20-oxyalkyl group, optionally interrupted by 1 to 5 oxygen atoms and/or sulfur atoms, or jointly for an optionally substituted C1-C20-dioxyalkylene group or C6-C20-dioxyarylene group, and 0.001 to 10 wt.-%, based on the total weight of the stabilized monomer composition, of a stabilizer. The present invention also relates to a method for the manufacture of a capacitor, a capacitor obtained by this method, the use of a stabilized monomer composition and to the use of a stabilizer.
    • 本发明涉及稳定的单体组合物,其包含基于稳定的单体组合物的总重量的至少50重量%的具有通式(I)的噻吩衍生物单体,其中R1和R2独立地为 另一个,对于氢,对于任选被取代的C1-C20烷基或C1-C20-氧烷基,任选地被1至5个氧原子和/或硫原子间隔,或共同用于任选取代的C 1 -C 20 - 二氧亚烷基 或C6-C20-二氧亚芳基,和基于稳定化单体组合物的总重量为0.001至10重量%的稳定剂。 本发明还涉及一种用于制造电容器,通过该方法获得的电容器,使用稳定的单体组合物和使用稳定剂的方法。