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    • 5. 发明授权
    • InGaN diode-laser pumped II-VI semiconductor lasers
    • InGaN二极管激光泵浦II-VI半导体激光器
    • US07136408B2
    • 2006-11-14
    • US10866907
    • 2004-06-14
    • Luis A. SpinelliHailong ZhouR. Russel Austin
    • Luis A. SpinelliHailong ZhouR. Russel Austin
    • H01S3/091
    • B82Y20/00H01S3/094057H01S3/0941H01S5/005H01S5/041H01S5/141H01S5/183H01S5/34333H01S5/347H01S5/4025
    • A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.
    • 半导体激光器包括包含至少一个II-VI半导体材料的有源层的多层半导体激光异质结构,并被一个或多个铟镓氮(InGaN)二极管激光器光泵浦。 II-VI族半导体材料中的II族元素是锌,镉,镁,铍,锶和钡。 II-VI族半导体材料中的VI族元素是硫,硒和碲。 在激光器的一个实例中,边缘发射异质结构包括两个硒化锌镉活性层,两个磺酸锌镁纳米波导层和两个包层,也是锌硫酸镁镁。 选择包层材料和波导层材料中的元素的比例使得波导层材料具有比波导层的材料更高的带隙。 在另一个示例中,布置InGaN二极管激光器的二维阵列以光学泵浦II-VI边缘发射异质结构激光器的一维阵列。
    • 9. 发明授权
    • Optically pumped semiconductor ring laser
    • 光泵浦半导体环形激光器
    • US07254153B2
    • 2007-08-07
    • US11193122
    • 2005-07-29
    • Stuart ButterworthAndrea CapraraR. Russel Austin
    • Stuart ButterworthAndrea CapraraR. Russel Austin
    • H01S3/083
    • H01S3/109H01S3/07H01S3/0816H01S3/082H01S3/083H01S3/0941H01S3/1003H01S3/105H01S5/041H01S5/141H01S5/183H01S5/423
    • An optically pumped semiconductor laser includes an active ring-resonator having two or more optically pumped semiconductor (OPS) structures each including a mirror-structure and a multilayer gain-structure. The mirror-structures serve as fold mirrors for the resonator axis. An optically nonlinear crystal may be included in the ring-resonator for generating second-harmonic radiation from fundamental radiation generated in the resonator. Another optically nonlinear crystal may be provided for generating third-harmonic or fourth-harmonic radiation from the second-harmonic radiation. In one example, including a third-harmonic generating crystal, a passive ring-resonator partially coaxial with the active ring-resonator is provided for circulating second-harmonic radiation to provide resonant amplification of the second-harmonic radiation for enhancing third-harmonic conversion. Apparatus for automatically maintaining the passive ring-resonator in a resonant condition for the second-harmonic radiation is disclosed.
    • 光泵浦半导体激光器包括具有两个或多个光泵浦半导体(OPS)结构的有源环形谐振器,每个结构包括镜面结构和多层增益结构。 镜结构用作谐振器轴的折叠镜。 环形谐振器中可以包括光学非线性晶体,用于从在谐振器中产生的基本辐射产生二次谐波辐射。 可以提供另一种光学非线性晶体用于从二次谐波辐射产生三次谐波或四次谐波辐射。 在一个示例中,包括三次谐波产生晶体,提供与有源环形谐振器部分同轴的无源环形谐振器,用于循环二次谐波辐射以提供用于增强三次谐波转换的二次谐波辐射的谐振放大。 公开了用于将二次谐波辐射的谐振条件下的无源环形谐振器自动维持的装置。