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1. 发明授权

US6137231A Constricted glow discharge plasma source 失效
标题翻译：约束辉光放电等离子体源
公开(公告)号：US6137231A
公开(公告)日：2000-10-24
申请号：US711844
申请日：1996-09-10
申请人： Andre Anders , Simone Anders , Michael Dickinson , Michael Rubin , Nathan Newman
发明人： Andre Anders , Simone Anders , Michael Dickinson , Michael Rubin , Nathan Newman
IPC分类号： H01J37/32 , H05H1/24
CPC分类号： H01J37/32009 , H05H1/24
摘要： A constricted glow discharge chamber and method are disclosed. The polarity and geometry of the constricted glow discharge plasma source is set so that the contamination and energy of the ions discharged from the source are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The source is suitable for applying films of nitrides such as gallium nitride and oxides such as tungsten oxide and for enriching other substances in material surfaces such as oxygen and water vapor, which are difficult process as plasma in any known devices and methods. The source can also be used to assist the deposition of films such as metal films by providing low-energy ions such as argon ions.
摘要翻译：公开了一种收缩辉光放电室和方法。缩小的辉光放电等离子体源的极性和几何形状被设定为使从源极排出的离子的污染物和能量最小化。可以并联并串联安装多个源，以在等离子体中提供持续的超低离子源，污染低于实际检测限。该源适合于施加诸如氮化镓的氮化物和氧化钨等氧化物的膜，并且用于富集诸如氧和水蒸气的材料表面中的其它物质，这在任何已知的装置和方法中作为等离子体是困难的过程。该源还可用于通过提供诸如氩离子的低能离子来辅助诸如金属膜的膜的沉积。

2. 发明授权

US5838522A Surface treatment of magnetic recording heads 失效
公开(公告)号：US5838522A
公开(公告)日：1998-11-17
申请号：US794672
申请日：1997-02-03
申请人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , C. Singh Bhatia
发明人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , C. Singh Bhatia
IPC分类号： C04B41/00 , C04B41/80 , C23C14/32 , C23C14/48 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/60 , G11B33/10
CPC分类号： C04B41/009 , C04B41/0027 , C04B41/0054 , C04B41/80 , C23C14/325 , C23C14/48 , G11B33/10 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/6005
摘要： Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances.

3. 发明授权

US5827580A Low temperature formation of electrode having electrically conductive metal oxide surface 失效
标题翻译：具有导电金属氧化物表面的电极的低温形成
公开(公告)号：US5827580A
公开(公告)日：1998-10-27
申请号：US625270
申请日：1996-03-27
申请人： Simone Anders , Andre Anders , Ian G. Brown , Frank R. McLarnon , Fanping Kong
发明人： Simone Anders , Andre Anders , Ian G. Brown , Frank R. McLarnon , Fanping Kong
IPC分类号： C23C14/00 , C23C14/08 , H01M4/26 , H01M4/32 , H01T14/00
CPC分类号： H01M4/32 , C23C14/0042 , C23C14/083 , H01M4/26
摘要： A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.
摘要翻译：公开了一种低温工艺，用于通过阴极电弧沉积在基板上形成金属低氧化物，方法是控制存在于沉积室中的氧气的压力，或通过控制金属熔剂的密度，或通过这些调节的组合，从而控制沉积的金属低氧化物涂层中氧化物与金属的比例。通过调整电弧的脉冲长度（周期的持续时间），并通过调整电弧的频率，或通过调整电弧的频率，可以通过控制电弧的放电电流来调整金属焊剂的密度这些参数。在优选实施例中，公开了一种低温工艺，用于在电极表面（例如氧化镍电极的表面）上形成导电金属低氧化物，例如钛的导电低氧化物，通过这种阴极电弧沉积和沉积参数的控制。在优选的实施方案中，该方法产生了一种低氧化钛涂层的氧化镍电极，其在使用如正极这样的电极制成的电池充电期间表现出减少的氧的寄生放电，并且表现出高的氧超电势，导致抑制在电池完全充电时电极的氧气释放。

4. 发明授权

US5851475A Surface treatment of ceramic articles 失效
标题翻译：陶瓷制品的表面处理
公开(公告)号：US5851475A
公开(公告)日：1998-12-22
申请号：US667502
申请日：1996-06-21
申请人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , C. Singh Bhatia
发明人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , C. Singh Bhatia
IPC分类号： C04B41/00 , C04B41/80 , C23C14/32 , C23C14/48 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/60 , G11B33/10 , B29C71/00
CPC分类号： C04B41/009 , C04B41/0027 , C04B41/80 , C23C14/325 , C23C14/48 , G11B33/10 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/6005
摘要： A process for producing an article with improved ceramic surface properties including providing an article having a ceramic surface, and placing the article onto a conductive substrate holder in a hermetic enclosure. Thereafter a low pressure ambient is provided in the hermetic enclosure. A plasma including ions of solid materials is produced the ceramic surface of the article being at least partially immersed in a macroparticle free region of the plasma. While the article is immersed in the macroparticle free region, a bias of the substrate holder is biased between a low voltage at which material from the plasma condenses on the surface of the article and a high negative voltage at which ions from the plasma are implanted into the article.
摘要翻译：一种用于生产具有改进的陶瓷表面性质的制品的方法，包括提供具有陶瓷表面的制品，以及将制品放置在密封外壳中的导电衬底保持器上。此后，在密封外壳中设置低压环境。产生包括固体材料离子的等离子体，该制品的陶瓷表面至少部分地浸没在等离子体的无大颗粒区域中。当制品浸没在无大颗粒区域中时，衬底保持器的偏压被偏压在来自等离子体物质在物体表面上凝结的低电压和来自等离子体的离子注入到高负电压的低电压之间文章。

5. 发明授权

US5476691A Surface treatment of magnetic recording heads 失效
标题翻译：表面处理磁记录头
公开(公告)号：US5476691A
公开(公告)日：1995-12-19
申请号：US306750
申请日：1994-09-15
申请人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , Singh C. Bhatia
发明人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , Singh C. Bhatia
IPC分类号： C04B41/00 , C04B41/80 , C23C14/32 , C23C14/48 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/60 , G11B33/10 , B05D3/06
CPC分类号： C04B41/009 , C04B41/0027 , C04B41/0054 , C04B41/80 , C23C14/325 , C23C14/48 , G11B33/10 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/6005
摘要： Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances.
摘要翻译：公开了使用等离子体浸没离子注入和沉积的磁记录头的表面改性。该方法可以使用具有金属或碳阴极的真空电弧沉积系统进行。通过以长脉冲模式操作等离子体枪并且以短负载电压的短脉冲偏置衬底支架，组合直接离子注入，反冲注入和表面沉积以改变头部或衬底的近表面区域处理时间可能小于5分钟。改性区域原子混合到基材中。该表面改性改善了表面平滑度和硬度，并且在接触 - 停止和连续滑动的条件下提高了摩擦学特性。在保持原始公差的同时获得这些结果。

6. 发明申请

US20100225989A1 PHASE CHANGE DEVICE 审中-公开
标题翻译：相变装置
公开(公告)号：US20100225989A1
公开(公告)日：2010-09-09
申请号：US12716838
申请日：2010-03-03
申请人： Andre Anders
发明人： Andre Anders
IPC分类号： G02F1/19
CPC分类号： G02F1/19 , G02F1/0147
摘要： A phase change material is applied as a very thin film to a transparent substrate such as glass, which material when switched from the amorphous to the crystalline state and back again can affect the reflectivity/transmittance of the combined substrate-coating system. When used with glass panels in the fabrication of relatively large area window glass, the change in spectrally selective transmittance can be used to modulate the amount of sunlight passing through the glass, and thus reduce the amount of cooling required for an interior space in the summertime, and the amount of heating required of that same interior space in the wintertime, while also optimizing the use of visible daylight. Exemplary of a suitable phase change material for glass coating is GeSb or BiSn. Heating of the phase change material to initiate a change in phase can be provided by the application of electric energy, such as supplied from a pulsed power supply, or radiant energy, such as from a laser.
摘要翻译：将相变材料作为非常薄的薄膜施加到诸如玻璃的透明基板上，该材料从无定形状态切换到结晶状态时，再次返回可影响组合的基底涂覆系统的反射率/透射率。当在相对大面积的窗玻璃的制造中与玻璃面板一起使用时，可以使用光谱选择性透射率的变化来调节通过玻璃的阳光的量，从而减少夏季内部空间所需的冷却量，以及冬季同一内部空间所需的加热量，同时优化可见日光的使用。用于玻璃涂层的合适的相变材料的示例是GeSb或BiSn。可以通过施加诸如从脉冲电源提供的电能或诸如激光的辐射能来提供相变材料的加热以引发相位变化。

7. 发明申请

US20100264016A1 VERY LOW PRESSURE HIGH POWER IMPULSE TRIGGERED MAGNETRON SPUTTERING 有权
标题翻译：非常低的压力高功率脉冲触发磁控溅射
公开(公告)号：US20100264016A1
公开(公告)日：2010-10-21
申请号：US12797829
申请日：2010-06-10
申请人： Andre Anders , Joakim Andersson
发明人： Andre Anders , Joakim Andersson
IPC分类号： C23C14/34
CPC分类号： C23C14/354 , C23C14/16 , H01J37/3467
摘要： A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.
摘要翻译：描述了用于将涂层的非常低压高功率磁控溅射在基底上的方法和装置。通过本发明的方法，将基材和涂覆目标材料两者放置在可抽空的室中，并将室抽入真空。此后，一系列高脉冲电压脉冲施加到目标。几乎与每个脉冲同时地，在一个实施例中，与靶相同材料的小阴极电弧源被脉冲化，触发靠近目标表面的等离子体羽流，从而启动磁控溅射工艺。在另一个实施例中，使用旨在使位于磁控管靶表面附近的消融靶材料的脉冲激光产生等离子体羽流。

8. 发明申请

US20140284207A1 FILTERS FOR BLOCKING MACROPARTICLES IN PLASMA DEPOSITION APPARATUS 有权
标题翻译：用于阻塞等离子体沉积装置的过滤器
公开(公告)号：US20140284207A1
公开(公告)日：2014-09-25
申请号：US14218434
申请日：2014-03-18
申请人： Andre Anders , Jonathan Kolbeck
发明人： Andre Anders , Jonathan Kolbeck
IPC分类号： C23C14/35
CPC分类号： C23C14/564 , C23C14/35 , H01J37/3405 , H01J37/3408 , H01J37/3447 , H01J2237/028
摘要： This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.
摘要翻译：本公开提供了在利用等离子体的沉积过程中与阻挡大颗粒相关的系统，方法和装置。在一个方面，一种装置包括阴极，衬底保持器，第一磁体，第二磁体和结构。阴极被配置为产生等离子体。衬底保持器构造成保持衬底。第一磁体设置在阴极的第一侧附近。第二磁体设置在衬底保持器的第二侧附近。在第一磁体和第二磁体之间存在磁场，并且等离子体的流动基本上跟随磁场。该结构设置在阴极的第二侧和衬底保持器的第一侧之间，并且位于第一磁体和第二磁体之间的磁场较弱的区域附近。

9. 发明申请

US20120138452A1 Method and Apparatus for Super-High Rate Deposition 审中-公开
标题翻译：超高速沉积的方法和装置
公开(公告)号：US20120138452A1
公开(公告)日：2012-06-07
申请号：US13264692
申请日：2010-04-13
申请人： Andre Anders
发明人： Andre Anders
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/24 , C23C14/541 , H01J37/3408 , H01J37/3467 , H01J37/3497
摘要： A method and apparatus for achieving very high deposition rate magnetron sputtering wherein the surface of a target and especially the race track zone area of the target, in one embodiment may be heated to such a degree that the target material approaches the melting point and sublimation sets in. Controlled heating is achieved primarily through the monitoring of the temperature of the target material and with the aid of a processor subsequently controlling the target temperature by adjustment of the power being inputted to the target. This controlled heating to the sublimation point is particularly effecting in high deposition rate metal coating of parts when used in conjunction with HIPIMS deposition. The apparatus for controlling temperature of the target in one embodiment includes a thermocouple, which is electronically connected to a controller or microcomputer which is programmed to control the power of the pulse to the target, and the duty cycle of the power pulses as the primary means for regulating the temperature of the system.
摘要翻译：一种用于实现非常高的沉积速率磁控溅射的方法和装置，其中靶的表面，特别是靶的轨道区域区域，在一个实施例中可以被加热到目标材料接近熔点和升华组控制加热主要通过监测目标材料的温度并借助于处理器随后通过调节输入到目标的功率来控制目标温度来实现。当与HIPIMS沉积结合使用时，对升华点的受控加热特别地影响部件的高沉积速率金属涂层。在一个实施例中，用于控制目标温度的装置包括热电偶，其被电连接到被编程为控制到目标的脉冲的功率的控制器或微型计算机，并且功率脉冲的占空比作为主要装置用于调节系统的温度。

10. 发明授权

US6140773A Automated control of linear constricted plasma source array 有权
标题翻译：线性约束等离子体源阵列的自动控制
公开(公告)号：US6140773A
公开(公告)日：2000-10-31
申请号：US253268
申请日：1999-02-19
申请人： Andre Anders , Peter A. Maschwitz
发明人： Andre Anders , Peter A. Maschwitz
IPC分类号： H01J37/32 , H05H1/24
CPC分类号： H05H1/24 , H01J37/32009
摘要： An apparatus and method for controlling an array of constricted glow discharge chambers are disclosed. More particularly a linear array of constricted glow plasma sources whose polarity and geometry are set so that the contamination and energy of the ions discharged from the sources are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The quality of film along deposition "tracks" opposite the plasma sources can be measured and compared to desired absolute or relative values by optical and/or electrical sensors. Plasma quality can then be adjusted by adjusting the power current values, gas feed pressure/flow, gas mixtures or a combination of some or all of these to improve the match between the measured values and the desired values.
摘要翻译：公开了一种用于控制辉光放电室的阵列的装置和方法。更具体地说是一种线性阵列的收缩辉光等离子体源，其极性和几何形状被设置为使得从源放出的离子的污染和能量最小化。可以并联并串联安装多个源，以在等离子体中提供持续的超低离子源，污染低于实际检测限。可以测量与等离子体源相对的沉积“轨道”的膜的质量，并通过光学和/或电传感器与期望的绝对值或相对值进行比较。然后可以通过调整功率电流值，气体进料压力/流量，气体混合物或其中的一些或全部组合来改善等离子体质量，以改善测量值与期望值之间的匹配。

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