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1. 发明授权

US5674636A Article comprising a microcavity light source 失效
标题翻译：文章包括微腔光源
公开(公告)号：US5674636A
公开(公告)日：1997-10-07
申请号：US528389
申请日：1995-09-13
申请人： Ananth Dodabalapur , Timothy Mark Miller , Lewis Josiah Rothberg
发明人： Ananth Dodabalapur , Timothy Mark Miller , Lewis Josiah Rothberg
IPC分类号： B05D5/06 , H01L51/50 , H01L51/52 , H01S5/36 , H05B33/12 , H05B33/22 , H05B33/24 , H01S3/08
CPC分类号： H05B33/22 , H01L51/5265 , H05B33/12 , H01S5/36 , Y10S428/917
摘要： Optical microcavities are potentially useful as light emitters for, e.g., flat panel displays. Such microcavities comprise a layer structure, including two spaced apart reflectors that define the cavity, with a layer or layers of organic (electroluminescent) material disposed between the reflectors. We have discovered that a microcavity can simultaneously emit radiation of two or more predetermined colors such that the emission has a desired apparent color, exemplarily white. Emission of two or more colors requires that the effective optical length of the cavity is selected such that the cavity is a multimode cavity, with the wavelengths of two or more of the standing wave modes that are supported by the cavity lying within the emission region of the electroluminescence spectrum of the active material. A particular embodiment with two organic emitting (active) layers is disclosed.
摘要翻译：光学微腔可能用作例如平板显示器的发光体。这种微腔包括层结构，包括限定空腔的两个间隔开的反射器，其中设置在反射器之间的一层或多层有机（电致发光）材料。我们已经发现，微腔可以同时发射两种或更多种预定颜色的辐射，使得发射具有所需的表观颜色，示例性地为白色。两种或更多种颜色的发射需要选择空腔的有效光学长度，使得空腔是多模腔，其中两个或更多个驻波模式的波长由位于发射区域的发射区域内的腔支撑活性物质的电致发光光谱。公开了具有两个有机发射（有源）层的具体实施方案。

2. 发明授权

US5814416A Wavelength compensation for resonant cavity electroluminescent devices 失效
标题翻译：谐振腔电致发光器件的波长补偿
公开(公告)号：US5814416A
公开(公告)日：1998-09-29
申请号：US630237
申请日：1996-04-10
申请人： Ananth Dodabalapur , Timothy Mark Miller , Lewis Josiah Rothberg
发明人： Ananth Dodabalapur , Timothy Mark Miller , Lewis Josiah Rothberg
IPC分类号： H01L51/50 , H01L51/52 , H05B33/02 , H05B33/12 , H05B33/22 , H05B33/24 , H05B33/00
CPC分类号： H05B33/22 , H01L51/5265 , Y10S428/917
摘要： Disclosed is a microcavity organic light emitter having reduced variation in emission spectra per change in viewing angle. In an illustrative embodiment, a microcavity EL device comprises a microcavity layer structure stacked on a symmetric, non-planar surface of a substrate. The microcavity layer structure includes at least a first reflective layer on the non-planar substrate surface, a second reflective layer and an active layer having organic material capable of electroluminescence between the first and second reflective layers. The non-planar surface may be a shallow cone, frustum, a dome-like surface, or a combination thereof.
摘要翻译：公开了一种微腔有机发光体，其每个视角变化的发射光谱变化减小。在一个说明性实施例中，微腔EL器件包括堆叠在衬底的对称非平面表面上的微腔层结构。微腔层结构包括在非平面衬底表面上的至少第一反射层，第二反射层和具有能够在第一和第二反射层之间电致发光的有机材料的有源层。非平面表面可以是浅锥体，平截头体，圆顶状表面或其组合。

3. 发明授权

US07397072B2 Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device 有权
标题翻译：使用四端杂交硅/有机场效应传感器器件的结构和方法
公开(公告)号：US07397072B2
公开(公告)日：2008-07-08
申请号：US11291729
申请日：2005-12-01
申请人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
发明人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
IPC分类号： H01L27/28
CPC分类号： H01L27/286 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4141 , H01L2924/0002 , H01L2924/00
摘要： A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
摘要翻译：四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。在N型半导体通道上沉积绝缘体。有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。有机半导体通道可以电充电和放电，并且响应于周围环境中的化学品而对其电荷进行改性。响应于有机半导体通道中的电荷，硅半导体沟道的导电性由公共栅中的感应电荷调制。

4. 发明授权

US06384804B1 Display comprising organic smart pixels 有权
标题翻译：显示器包括有机智能像素
公开(公告)号：US06384804B1
公开(公告)日：2002-05-07
申请号：US09199364
申请日：1998-11-25
申请人： Ananth Dodabalapur , Rahul Sarpeshkar
发明人： Ananth Dodabalapur , Rahul Sarpeshkar
IPC分类号： G09G332
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0852 , G09G2310/0251 , G09G2320/0219 , G09G2320/029 , G09G2320/043
摘要： A display apparatus according to our invention comprises a multiplicity of nominally identical smart pixels, a given pixel comprising an organic light emitting diode and an organic or inorganic (e.g., amorphous or polycrystalline Si) pixel FET. The display also comprises drive/compensation circuitry adapted for mitigating or eliminating non-idealities associated with the organic components. Among the non-idealities are variations in mobility and/or threshold voltage of the pixel FET from transistor to transistor, change in mobility and/or threshold voltage with time in a given pixel FET, change over time of the LED characteristics, capacitive signal feed-through through the gate insulator of the pixel FETs by short rise/fall time pulses, poor on-off ratio of the pixel FET, and charge leakage through the gate dielectric. Exemplary drive/compensation circuitry is disclosed.
摘要翻译：根据我们的发明的显示装置包括多个名义上相同的智能像素，给定像素包括有机发光二极管和有机或无机（例如，非晶或多晶Si）像素FET。显示器还包括适于减轻或消除与有机部件相关联的非理想性的驱动/补偿电路。在非理想性中，像素FET从晶体管到晶体管的迁移率和/或阈值电压的变化，给定像素FET中的迁移率和/或阈值电压随时间的变化，LED特性随时间的变化，电容信号馈送通过像素FET的栅极绝缘体通过短的上升/下降时间脉冲，像素FET的差的开/关比以及通过栅极电介质的电荷泄漏。公开了示例性的驱动/补偿电路。

5. 发明授权

US5405710A Article comprising microcavity light sources 失效
标题翻译：文章包括微腔光源
公开(公告)号：US5405710A
公开(公告)日：1995-04-11
申请号：US156217
申请日：1993-11-22
申请人： Ananth Dodabalapur , Timothy M. Miller , Lewis J. Rothberg
发明人： Ananth Dodabalapur , Timothy M. Miller , Lewis J. Rothberg
IPC分类号： G09F9/33 , H01L27/32 , H01L33/00 , H01L51/50 , H01L51/52 , H05B33/12 , H05B33/14 , H05B33/24
CPC分类号： H01L51/5265 , H01L27/3206 , H01L51/5036 , H05B33/12 , Y10S428/917
摘要： Apparatus according to the invention comprises at least two optical microcavity light emitters. Each one of the at least two light emitters comprises spaced apart reflectors that define a microcavity, and further comprises organic material that is capable of electro-luminescence (e.g., tris (8-hydroxyquinolinol) aluminum, commonly referred to as "Alq"), and means for applying an electric field across the organic material. One of the at least two microcavities has effective optical length L.sub.1, and the other microcavity has effective optical length L.sub.2 .noteq.L.sub.1, with the optical lengths selected such that one of the microcavities emits radiation of a first color (e.g., red), and the other microcavity emits radiation of a second color (e.g., green). In many cases there will be present also a third microcavity that emits radiation of a third color (e.g., blue). In preferred embodiments there is present within the microcavities a filler layer, of thickness selected to provide to a given microcavity the desired optical length. A preferred embodiment of the invention is a full color flat panel display that comprises many pixels, each pixel comprising at least three different microcavity emitters. Other contemplated embodiments are a LED printer, an optical interconnect and an optical fiber communication system.
摘要翻译：根据本发明的装置包括至少两个光学微腔光发射器。所述至少两个光发射器中的每一个包括限定微腔的间隔开的反射器，并且还包括能够发光的有机材料（例如，通常称为“Alq”）的三（8-羟基喹啉）铝，以及用于在有机材料上施加电场的装置。所述至少两个微腔中的一个具有有效的光学长度L1，另一个微腔具有有效的光学长度L2 NOTEQUAL L1，其中选择光学长度使得其中一个微腔发射第一颜色（例如，红色）的辐射，并且其他微腔发射第二种颜色（如绿色）的辐射。在许多情况下，还将存在发射第三颜色（例如蓝色）的辐射的第三微腔。在优选实施例中，在微腔内部存在厚度选择为向给定微腔提供所需光学长度的填充层。本发明的优选实施例是包括许多像素的全色平板显示器，每个像素包括至少三个不同的微腔发射器。其他考虑的实施例是LED打印机，光学互连和光纤通信系统。

6. 发明授权

US07538538B2 Method of using a four terminal hybrid silicon/organic field effect sensor device 失效
标题翻译：使用四端杂交硅/有机场效应传感器装置的方法
公开(公告)号：US07538538B2
公开(公告)日：2009-05-26
申请号：US12133795
申请日：2008-06-05
申请人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
发明人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
IPC分类号： H01L23/58
CPC分类号： H01L27/286 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4141 , H01L2924/0002 , H01L2924/00
摘要： A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
摘要翻译：四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。在N型半导体通道上沉积绝缘体。有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。有机半导体通道可以电充电和放电，并且响应于周围环境中的化学品而对其电荷进行改性。响应于有机半导体通道中的电荷，硅半导体沟道的导电性由公共栅中的感应电荷调制。

7. 发明申请

US20080278140A1 METHOD OF USING A FOUR TERMINAL HYBRID SILICON/ORGANIC FIELD EFFECT SENSOR DEVICE 失效
标题翻译：使用四端子混合硅/有机场效应传感器器件的方法
公开(公告)号：US20080278140A1
公开(公告)日：2008-11-13
申请号：US12133795
申请日：2008-06-05
申请人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
发明人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
IPC分类号： G01N27/00
CPC分类号： H01L27/286 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4141 , H01L2924/0002 , H01L2924/00
摘要： A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
摘要翻译：四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。在N型半导体通道上沉积绝缘体。有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。有机半导体通道可以电充电和放电，并且响应于周围环境中的化学品而对其电荷进行改性。响应于有机半导体通道中的电荷，硅半导体沟道的导电性由公共栅中的感应电荷调制。

8. 发明授权

US06410416B1 Article comprising a high-resolution pattern on a non-planar surface and method of making the same 有权
标题翻译：包括非平面表面上的高分辨率图案的制品及其制造方法
公开(公告)号：US06410416B1
公开(公告)日：2002-06-25
申请号：US09322471
申请日：1999-05-28
申请人： Ananth Dodabalapur , John A. Rogers , Richart Elliott Slusher
发明人： Ananth Dodabalapur , John A. Rogers , Richart Elliott Slusher
IPC分类号： H01L2144
CPC分类号： H01S5/1231 , H01S5/0207 , H01S5/021 , H01S5/22 , H01S5/36
摘要： An article is disclosed having a non-planar surface with a high-resolution pattern formed thereon, particularly a distributed-feedback (DFB) ridge waveguide laser. An elastomeric member having relief patterns on its surface is used to print or mold a pattern directly onto the non-planar surface of the waveguide. A range of materials disposed on such non-planar surfaces can thus be patterned at high resolution to provide devices with sub-micron features at low cost with potential applications in optoelectronics. For example, a plastic laser based on molded organic gain materials may be made.
摘要翻译：公开了具有形成在其上的高分辨率图案的非平面表面，特别是分布反馈（DFB）脊波导激光器的制品。在其表面上具有浮雕图案的弹性体构件用于将图案直接印刷或模制到波导的非平面表面上。因此，在这种非平面表面上布置的一系列材料可以以高分辨率图案化，以低成本提供器件具有亚微米特征，并具有光电子学中的潜在应用。例如，可以制造基于模制的有机增益材料的塑料激光器。

9. 发明授权

US6150668A Thin-film transistor monolithically integrated with an organic light-emitting diode 有权
标题翻译：与有机发光二极管单片集成的薄膜晶体管
公开(公告)号：US6150668A
公开(公告)日：2000-11-21
申请号：US391729
申请日：1999-09-08
申请人： Zhenan Bao , Ananth Dodabalapur , Howard Edan Katz , Venkataram Reddy Raju , John A. Rogers
发明人： Zhenan Bao , Ananth Dodabalapur , Howard Edan Katz , Venkataram Reddy Raju , John A. Rogers
IPC分类号： H01L29/786 , G09F9/30 , H01L27/15 , H01L27/32 , H01L51/00 , H01L51/30 , H01L51/40 , H01L33/00
CPC分类号： H01L27/3248 , H01L27/3274 , H01L51/0545 , H01L51/0036 , H01L51/0038 , H01L51/005
摘要： A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.
摘要翻译：公开了一种其中一个或多个薄膜晶体管与发光二极管单片集成的器件。薄膜晶体管具有有机半导体层。发光二极管的发光层也是有机材料。通过将薄膜晶体管和发光二极管的制造集成在衬底上并通过采用低成本制造技术来经济地制造器件。

10. 发明授权

US5625199A Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors 失效
标题翻译：文章包括与无机n沟道和有机p沟道薄膜晶体管的互补电路
公开(公告)号：US5625199A
公开(公告)日：1997-04-29
申请号：US587426
申请日：1996-01-16
申请人： Joerg Baumbach , Ananth Dodabalapur , Howard E. Katz
发明人： Joerg Baumbach , Ananth Dodabalapur , Howard E. Katz
IPC分类号： H01L27/08 , H01L21/8238 , H01L25/07 , H01L27/092 , H01L27/12 , H01L27/28 , H01L29/786 , H01L35/24 , H01L51/00 , H01L51/05 , H01L51/30
CPC分类号： H01L27/286 , H01L25/072 , H01L27/12 , H01L51/0545 , H01L2224/24226 , H01L2924/01079 , H01L51/0036
摘要： Complementary circuits with inorganic n-channel thin film transistors (TFTs) and organic p-channel TFTs can exhibit advantageous properties, without being subject to some of the drawbacks of prior art complimentary inorganic TFTs or complementary organic TFTs. In preferred embodiments of the invention, the n-channel inorganic TFTs have an amorphous Si active layer, and the p-channel organic TFTs have .DELTA.-hexathienylene (.alpha.-6T) active layer. Complementary inverters according to the invention are disclosed, as is an exemplary processing sequence that can be used to manufacture integrated complementary inverters and other complementary circuits according to the invention.
摘要翻译：具有无机n沟道薄膜晶体管（TFT）和有机p沟道TFT的互补电路可以表现出有利的性质，而不会受到现有技术的互补无机TFT或互补有机TFT的一些缺点。在本发明的优选实施例中，n沟道无机TFT具有非晶Si有源层，p沟道有机TFT具有DELTA-六亚噻吩（α-6T）活性层。公开了根据本发明的互补逆变器，以及可以用于制造根据本发明的集成互补逆变器和其他互补电路的示例性处理顺序。

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