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1. 发明授权

US06933242B1 Plasma etching 有权
标题翻译：等离子体蚀刻
公开(公告)号：US06933242B1
公开(公告)日：2005-08-23
申请号：US10018809
申请日：2000-06-21
申请人： Anand Srinivasan , Carl-Fredrik Carlstrom , Gunnar Landgren
发明人： Anand Srinivasan , Carl-Fredrik Carlstrom , Gunnar Landgren
IPC分类号： H05H1/46 , H01L21/302 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/30621
摘要： A substrate whose elemental constituents are selected from Groups III and V of the Periodic Table, is provided with pre-defined masked regions. Etching of the substrate comprising the steps of: a) forming a gas containing molecules having at least one methyl group (CH3) linked to nitrogen into a plasma; and b) etching the unmasked regions of the substrate by means of the plasma. For a substrate whose elemental constituents are selected from Groups II and VI of the Periodic Table, the plasma etching gas used is trimethylamine. Since the methyl compound of nitrogen has a lower bond energy than for hydrocarbon mixtures, free methyl radicals are easier to obtain and the gas is more efficient as a methyl source. In addition, compared with hydrocarbon mixtures, reduced polymer formation can be expected due to preferential formation of methyl radicals over polymer-generating hydrocarbon radicals because of the lower bond energy for the former.
摘要翻译：其元素组分选自元素周期表的III和Ⅴ族的衬底，其具有预定义的掩模区域。底物的蚀刻包括以下步骤：a）形成含有与氮连接的至少一个甲基（CH 3 3 N）的分子的气体至等离子体中; 和b）通过等离子体蚀刻衬底的未掩模区域。对于其元素成分选自元素周期表II和VI族的基底，所用的等离子体蚀刻气体是三甲胺。由于氮的甲基化合物具有比对于烃混合物更低的键能，所以游离甲基自由基更容易获得，并且气体作为甲基源更有效。此外，与烃混合物相比，由于优先生成甲基自由基而产生聚合物的烃基，因为可以预期降低聚合物的形成，因为前者具有较低的键能。

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