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1. 发明申请

US20100051960A1 DEVICE AND PROCESS OF FORMING DEVICE WITH PRE-PATTERNED TRENCH AND GRAPHENE-BASED DEVICE STRUCTURE FORMED THEREIN 有权
标题翻译：具有预先形成的TRENCH和基于石墨的器件结构形成器件的器件和工艺
公开(公告)号：US20100051960A1
公开(公告)日：2010-03-04
申请号：US12201851
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/78684 , H01L29/1606 , H01L29/66742 , H01L29/7781
摘要： A graphene-based device is formed with a trench in one or more layers of material, a graphene layer within the trench, and a device structure on the graphene layer and within the trench. Fabrication techniques includes forming a trench defined by one or more layers of material, forming a graphene layer within the trench, and forming a device structure on the graphene layer and within the trench.
摘要翻译：基于石墨烯的器件形成有一层或多层材料中的沟槽，沟槽内的石墨烯层，以及石墨烯层和沟槽内的器件结构。制造技术包括形成由一层或多层材料限定的沟槽，在沟槽内形成石墨烯层，并在石墨烯层和沟槽内形成器件结构。

2. 发明申请

US20100051897A1 DEVICE AND PROCESS OF FORMING DEVICE WITH DEVICE STRUCTURE FORMED IN TRENCH AND GRAPHENE LAYER FORMED THEREOVER 有权
标题翻译：形成装置的装置和方法，其中形成的装置结构形成在其中形成的TRENCH和GRAPHENE层
公开(公告)号：US20100051897A1
公开(公告)日：2010-03-04
申请号：US12201801
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/16 , B82Y10/00 , H01L29/1606 , H01L29/66234 , H01L29/778 , H01L29/78606 , H01L29/78684 , H01L51/0545 , H01L51/102
摘要： A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming a trench in a substrate, forming a device structure within the trench, forming a graphene layer over the device structure, and forming a protective layer over the graphene layer.
摘要翻译：基于石墨烯的器件形成有其中具有沟槽的衬底，衬底上的器件结构和沟槽内的器件结构，在器件结构上方的石墨烯层以及石墨烯层之上的保护层。制造技术包括在衬底中形成沟槽，在沟槽内形成器件结构，在器件结构之上形成石墨烯层，并在石墨烯层上形成保护层。

3. 发明授权

US07939247B2 Process of patterning small scale devices 有权
标题翻译：图案化小规模器件的工艺
公开(公告)号：US07939247B2
公开(公告)日：2011-05-10
申请号：US12201993
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： G03F7/00 , G03F1/00
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L29/16 , H01L29/1606
摘要： A process is provided that includes forming a first mask on an underlying layer, where the mask has two adjacent portions with an open gap therebetween, and depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask. In another implementation, a process is provided that includes forming a first mask on an underlying layer, where the mask has a pattern that includes an open gap, and depositing a second mask material within the open gap to form a second mask, where particles of the second mask material are directed in parallel or substantially in parallel to a line at an inclined angle with respect to an upper surface of the underlying layer.
摘要翻译：提供了一种方法，其包括在下层上形成第一掩模，其中掩模具有两个相邻部分，其间具有开放间隙，并且将第二掩模材料沉积在开放间隙内并且以相对于底层形成第二个掩模。在另一个实施方案中，提供了一种方法，其包括在下层上形成第一掩模，其中掩模具有包括开放间隙的图案，以及在开口间隙内沉积第二掩模材料以形成第二掩模，第二掩模材料相对于下层的上表面以倾斜的角度平行地或基本平行于一条直线引导。

4. 发明授权

US08605481B2 Crossbar array memory elements and related read methods 有权
标题翻译： Crossbar数组内存元素和相关读取方法
公开(公告)号：US08605481B2
公开(公告)日：2013-12-10
申请号：US12895043
申请日：2010-09-30
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： G11C11/00
CPC分类号： G11C11/413 , G11C8/10
摘要： Apparatus and related fabrication and read methods are provided for crossbar memory elements. An exemplary crossbar memory element includes a crossbar array structure including a set of access lines, unswitched resistance elements coupled electrically in series between the set of access lines and a reference voltage node, and switched resistance elements coupled electrically in series between the first set of access lines and the reference voltage node. To read from a selected access line, the switched resistance element associated with that access line is enabled while the remaining switched resistance elements are disabled.
摘要翻译：为交叉开关存储器元件提供了装置和相关的制造和读取方法。示例性的横向存储器元件包括交叉开关阵列结构，其包括一组接入线，电连接在该组接入线路和参考电压节点之间的非开关电阻元件以及电连接在第一组接入之间的开关电阻元件线路和参考电压节点。要从选定的接入线路读取，与该接入线路相关联的开关电阻元件被使能，而剩余的开关电阻元件被禁用。

5. 发明申请

US20130223162A1 METHODS AND SYSTEMS FOR MEMORY DEVICES WITH ASYMMETRIC SWITCHING CHARACTERISTICS 有权
标题翻译：具有不对称切换特性的存储器件的方法和系统
公开(公告)号：US20130223162A1
公开(公告)日：2013-08-29
申请号：US13404212
申请日：2012-02-24
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： G11C7/00
CPC分类号： G11C7/22 , G11C13/0002 , G11C13/0004 , G11C13/0069 , G11C13/0097 , G11C2013/0076 , G11C2211/5647
摘要： Methods and apparatus are provided for storing data in a non-volatile memory device. A method includes comparing bits of a write instruction with bits in a memory block to determine bits to be switched in the memory block; determining a switch type for each bit to be switched in the memory block; and evaluating the switch type for each bit to be switched in the memory block. The method further comprises when at least one switch type is a first switch type, performing a first operation on the memory block, and when all of the switch types are not the first switch type, performing a second operation on each bit to be switched in the memory block.
摘要翻译：提供了用于将数据存储在非易失性存储器件中的方法和装置。一种方法包括将写入指令的比特与存储器块中的比特进行比较，以确定要在存储块中切换的比特; 确定要在所述存储器块中切换的每个位的开关类型; 并对存储器块中要切换的每个位进行开关类型的评估。该方法还包括当至少一种开关类型是第一开关类型时，对存储器块执行第一操作，并且当所有开关类型不是第一开关类型时，对要切换的每个位执行第二操作内存块。

6. 发明申请

US20110253983A1 SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS 有权
标题翻译：用于三维电子的小型石墨设备
公开(公告)号：US20110253983A1
公开(公告)日：2011-10-20
申请号：US13158773
申请日：2011-06-13
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L21/02527 , H01L21/02612 , H01L29/1606 , H01L29/66795 , H01L29/7781 , Y10T428/24174
摘要： A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.
摘要翻译：提供一种装置，其包括具有侧壁表面的结构，设置在侧壁表面上的材料层，以及设置为与材料层接触的装置结构。制造技术包括一种方法，其包括形成具有侧壁表面的结构，在侧壁表面上形成材料层，以及形成与材料层接触的器件结构，其中器件结构和材料层是一个装置。

7. 发明授权

US07993986B2 Sidewall graphene devices for 3-D electronics 有权
标题翻译：用于3-D电子器件的侧壁石墨烯器件
公开(公告)号：US07993986B2
公开(公告)日：2011-08-09
申请号：US12202011
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： H01L21/335
CPC分类号： H01L29/785 , H01L21/02527 , H01L21/02612 , H01L29/1606 , H01L29/66795 , H01L29/7781 , Y10T428/24174
摘要： A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.
摘要翻译：提供一种装置，其包括具有侧壁表面的结构，设置在侧壁表面上的材料层，以及设置为与材料层接触的装置结构。制造技术包括一种方法，其包括形成具有侧壁表面的结构，在侧壁表面上形成材料层，以及形成与材料层接触的器件结构，其中器件结构和材料层是一个装置。

8. 发明授权

US07858989B2 Device and process of forming device with device structure formed in trench and graphene layer formed thereover 有权
标题翻译：在其上形成的沟槽和石墨烯层中形成器件结构的器件和工艺
公开(公告)号：US07858989B2
公开(公告)日：2010-12-28
申请号：US12201801
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： H01L29/15
CPC分类号： H01L29/16 , B82Y10/00 , H01L29/1606 , H01L29/66234 , H01L29/778 , H01L29/78606 , H01L29/78684 , H01L51/0545 , H01L51/102
摘要： A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming a trench in a substrate, forming a device structure within the trench, forming a graphene layer over the device structure, and forming a protective layer over the graphene layer.
摘要翻译：基于石墨烯的器件形成有其中具有沟槽的衬底，衬底上的器件结构和沟槽内的器件结构，在器件结构上方的石墨烯层以及石墨烯层之上的保护层。制造技术包括在衬底中形成沟槽，在沟槽内形成器件结构，在器件结构之上形成石墨烯层，并在石墨烯层上形成保护层。

9. 发明申请

US20100055577A1 PROCESS OF PATTERNING SMALL SCALE DEVICES 有权
标题翻译：绘制小规模设备的过程
公开(公告)号：US20100055577A1
公开(公告)日：2010-03-04
申请号：US12201993
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： G03F1/16
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L29/16 , H01L29/1606
摘要： A process is provided that includes forming a first mask on an underlying layer, where the mask has two adjacent portions with an open gap therebetween, and depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask. In another implementation, a process is provided that includes forming a first mask on an underlying layer, where the mask has a pattern that includes an open gap, and depositing a second mask material within the open gap to form a second mask, where particles of the second mask material are directed in parallel or substantially in parallel to a line at an inclined angle with respect to an upper surface of the underlying layer.
摘要翻译：提供了一种方法，其包括在下层上形成第一掩模，其中掩模具有两个相邻部分，其间具有开放间隙，并且将第二掩模材料沉积在开放间隙内并且以相对于底层形成第二个掩模。在另一个实施方案中，提供了一种方法，其包括在下层上形成第一掩模，其中掩模具有包括开放间隙的图案，以及在开口间隙内沉积第二掩模材料以形成第二掩模，第二掩模材料相对于下层的上表面以倾斜的角度平行地或基本平行于一条直线引导。

10. 发明申请

US20100055388A1 SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS 有权
标题翻译：用于三维电子的小型石墨设备
公开(公告)号：US20100055388A1
公开(公告)日：2010-03-04
申请号：US12202011
申请日：2008-08-29
申请人： An Chen , Zoran Krivokapic
发明人： An Chen , Zoran Krivokapic
IPC分类号： B32B33/00 , C23F1/00
CPC分类号： H01L29/785 , H01L21/02527 , H01L21/02612 , H01L29/1606 , H01L29/66795 , H01L29/7781 , Y10T428/24174
摘要： A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.
摘要翻译：提供一种装置，其包括具有侧壁表面的结构，设置在侧壁表面上的材料层，以及设置为与材料层接触的装置结构。制造技术包括一种方法，其包括形成具有侧壁表面的结构，在侧壁表面上形成材料层，以及形成与材料层接触的器件结构，其中器件结构和材料层是一个装置。

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