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    • 8. 发明授权
    • Latch structure for interlocked pipelined CMOS (IPCMOS) circuits
    • 用于联锁流水线CMOS(IPCMOS)电路的锁存结构
    • US06829716B2
    • 2004-12-07
    • US09836375
    • 2001-04-17
    • Peter W. CookStanley E. Schuster
    • Peter W. CookStanley E. Schuster
    • G06F104
    • G06F7/00G06F9/3869G06F9/3871
    • Circuits and methods for operating a latch structure are disclosed. The circuits include a plurality of stages, and each stage includes a first logic circuit, a latch coupled to a second logic circuit of an adjacent stage and a switch which connects the first logic circuit to the latch in a first state and disconnects the logic circuit from the latch in a second state. A local clock circuit controls the first and second states by providing a locally generated clock signal to activate the switch. The locally generated clock signals are generated by interlocking handshake signals from a local clock circuit of an adjacent stage.
    • 公开了用于操作闩锁结构的电路和方法。 电路包括多个级,并且每个级包括第一逻辑电路,耦合到相邻级的第二逻辑电路的锁存器和在第一状态下将第一逻辑电路连接到锁存器的开关,并且断开逻辑电路 从第二状态的锁存器。 本地时钟电路通过提供本地生成的时钟信号来激活开关来控制第一和第二状态。 本地生成的时钟信号通过来自相邻级的本地时钟电路的互锁信号产生。
    • 9. 发明授权
    • Avoidance of hot electron operation of voltage stressed bootstrap drivers
    • 避免电压应力引导驱动器的热电子操作
    • US4199695A
    • 1980-04-22
    • US883429
    • 1978-03-03
    • Peter W. CookStanley E. Schuster
    • Peter W. CookStanley E. Schuster
    • H01L27/04G06F1/04H01L21/822H01L21/8234H01L27/06H01L27/088H01L29/78H03K5/02H03K17/082H03K19/003H03K19/017H03K3/353
    • H03K5/023G06F1/04H01L27/06H01L29/78H03K17/0822H03K19/00315H03K19/01714
    • An improved field effect transistor circuit adapted to operate at high switching speeds and to avoid hot electron operation of voltage stressed FET bootstrap drivers. The circuit comprises a voltage control means adapted to maintain a simultaneous gate and drain to source voltage of FET devices within a characteristic hot electron operational voltage range. The voltage control means is adapted to reduce FET drain to source voltage by connecting a plurality of FET devices in series to reduce the drain to source voltage drop across each device. The drain to source voltage is further defined by connecting the common nodes of successive series connected devices to a specified voltage source that is less than a characteristic hot electron drain to source voltage. The voltage control means also includes a gate voltage clamping FET that is adapted to hold down the gate of a device when the drain to source voltage of the device rises above a particular hot electron voltage. The voltage control means further comprises a plurality of timing pulses that define particular combinations of gate and drain to source device voltages that are less than characteristic combined hot electron voltages. The voltage control means further includes devices with width to length ratios adapted to provide close voltage tracking between input drain voltages and output source voltages to maintain a minimum drain to source voltage drop. The operation of the hot electron voltage control means is particularly described with respect to embodiments using voltage stressed bootstrap driver FETs to generate on chip clock phases.
    • 一种改进的场效应晶体管电路,适于在高开关速度下工作并避免受压应力FET自举驱动器的热电子操作。 该电路包括电压控制装置,其适于在特征热电子工作电压范围内保持FET器件的同时栅极和漏极到源极电压。 电压控制装置适于通过串联连接多个FET器件来减少FET漏极到源极电压,以减少跨越每个器件的漏极到源极电压降。 通过将连续串联连接的器件的公共节点连接到小于特征热电子漏极到源极电压的指定电压源,进一步限定漏极到源极电压。 电压控制装置还包括栅极电压钳位FET,其适于在器件的漏极 - 源极电压升高到特定热电子电压之上时压住器件的栅极。 电压控制装置还包括多个定时脉冲,其限定小于特征组合热电子电压的栅极和漏极与源极器件电压的特定组合。 电压控制装置还包括宽度与长度比适合于在输入漏极电压和输出源电压之间提供紧密电压跟踪的装置,以保持对源极电压降的最小漏极。 关于使用电压应力自举驱动器FET以产生片上时钟相位的实施例,特别描述了热电子电压控制装置的操作。