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1. 发明授权

US07608335B2 Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate 失效
标题翻译：在多晶/非晶衬底上的单晶，高载流子迁移率硅薄膜附近
公开(公告)号：US07608335B2
公开(公告)日：2009-10-27
申请号：US11001461
申请日：2004-11-30
申请人： Alp T. Findikoglu , Quanxi Jia , Paul N. Arendt , Vladimir Matias , Woong Choi
发明人： Alp T. Findikoglu , Quanxi Jia , Paul N. Arendt , Vladimir Matias , Woong Choi
IPC分类号： B32B9/00 , B32B9/04 , B32B13/04
CPC分类号： C30B29/06 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02505 , H01L21/02521 , H01L21/02532 , H01L21/02587 , H01L21/02658
摘要： A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.
摘要翻译：一种模板制品，包括基底，其包括：（i）选自多晶基底和非晶基底的基材，和（ii）在所述基材表面上的至少一层不同材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性;以及（c）适于随后沉积半导体材料的晶格结构; 与包括基底基板的半导体产品一起提供，所述半导体产品包括：（i）选自多晶基底和非晶基底的基材，和（ii）在基底表面上的至少一层不同材料材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性，以及（c）适于随后沉积半导体材料的晶格结构结构，以及半导体材料的顶层在缓冲材料层上。

2. 发明申请

US20110111964A1 COATED CONDUCTOR ARCHITECTURE 审中-公开
标题翻译：涂层导体架构
公开(公告)号：US20110111964A1
公开(公告)日：2011-05-12
申请号：US12850311
申请日：2010-08-04
申请人： Quanxi Jia , Vladimir Matias , Alp T. Findikoglu , David M. Feldmann
发明人： Quanxi Jia , Vladimir Matias , Alp T. Findikoglu , David M. Feldmann
IPC分类号： H01L39/12 , B32B15/04 , B32B9/00
CPC分类号： H01L39/2461 , Y10T428/265
摘要： A simplified architecture for a superconducting coated conductor is provided and includes a substrate, a layer of titanium nitride directly upon the substrate, the layer of titanium nitride deposited by ion beam assisted deposition (IBAD), a layer of a buffer material having chemical and structural compatibility with said layer of titanium nitride, the buffer material layer directly upon the IBAD-titanium nitride layer, and a layer of a high temperature superconductive material such as YBCO.
摘要翻译：提供了一种用于超导涂层导体的简化体系结构，其中包括基片，直接在基片上的氮化钛层，通过离子束辅助沉积（IBAD）沉积的氮化钛层，具有化学和结构的缓冲材料层与所述氮化钛层的相容性，直接在IBAD-氮化钛层上的缓冲材料层和诸如YBCO的高温超导材料层。

3. 发明授权

US07288332B2 Conductive layer for biaxially oriented semiconductor film growth 失效
标题翻译：用于双轴取向半导体膜生长的导电层
公开(公告)号：US07288332B2
公开(公告)日：2007-10-30
申请号：US11245721
申请日：2005-10-06
申请人： Alp T. Findikoglu , Vladimir Matias
发明人： Alp T. Findikoglu , Vladimir Matias
IPC分类号： B32B19/00
CPC分类号： H01L31/022408 , C03C14/008 , C03C2214/32 , H01L31/022466 , H01L31/036 , H01L31/1884 , Y02E10/50
摘要： A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
摘要翻译：用于双轴取向半导体膜生长的导电层和诸如光电检测器，光伏电池或发光二极管（LED）的薄膜半导体结构，其包括设置在导电层上的晶体学取向的半导体膜。薄膜半导体结构包括：基板; 沉积在基板上的第一电极; 以及外延沉积在第一电极上的半导体层。第一电极包括沉积在衬底上的模板层和外延沉积在模板层上的缓冲层。模板层包括导电并具有岩盐晶体结构的第一金属氮化物，并且缓冲层包括导电的第二金属氮化物。半导体层外延沉积在缓冲层上。还描述了制造这种薄膜半导体结构的方法。

4. 发明申请

US20090214859A1 BIAXIALLY ORIENTED FILM ON FLEXIBLE POLYMERIC SUBSTRATE 失效
标题翻译：柔性聚合物基材上的双向定向膜
公开(公告)号：US20090214859A1
公开(公告)日：2009-08-27
申请号：US11345106
申请日：2006-01-31
申请人： Alp T. Finkikoglu , Vladimir Matias
发明人： Alp T. Finkikoglu , Vladimir Matias
IPC分类号： B32B27/06
CPC分类号： B32B27/00 , H01L31/03926 , Y02E10/50 , Y10T428/269 , Y10T428/31721
摘要： A flexible polymer-based template having a biaxially oriented film grown on the surface of a polymeric substrate. The template having the biaxially oriented film can be used for further epitaxial growth of films of interest for applications such as photovoltaic cells, light emitting diodes, and the like. Methods of forming such a flexible template and providing the polymeric substrate with a biaxially oriented film deposited thereon are also described.
摘要翻译：具有在聚合物基材的表面上生长的双轴取向膜的柔性聚合物基模板。具有双轴取向膜的模板可用于进一步外延生长用于诸如光伏电池，发光二极管等的应用的薄膜。还描述了形成这种柔性模板并且提供聚合物基材上沉积有双轴取向薄膜的方法。

5. 发明授权

US07510641B2 High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors 有权
标题翻译：高电流密度电解抛光制备用于涂层导体的高度光滑的基材带
公开(公告)号：US07510641B2
公开(公告)日：2009-03-31
申请号：US10624350
申请日：2003-07-21
申请人： Sascha Kreiskott , Vladimir Matias , Paul N. Arendt , Stephen R. Foltyn , Lawrence E. Bronisz
发明人： Sascha Kreiskott , Vladimir Matias , Paul N. Arendt , Stephen R. Foltyn , Lawrence E. Bronisz
IPC分类号： C25F3/16
CPC分类号： C25F3/16 , C25F3/22 , H01L39/2454
摘要： A continuous process of forming a highly smooth surface on a metallic tape by passing a metallic tape having an initial roughness through an acid bath contained within a polishing section of an electropolishing unit over a pre-selected period of time, and, passing a mean surface current density of at least 0.18 amperes per square centimeter through the metallic tape during the period of time the metallic tape is in the acid bath whereby the roughness of the metallic tape is reduced. Such a highly smooth metallic tape can serve as a base substrate in subsequent formation of a superconductive coated conductor.
摘要翻译：一种在金属带上形成高度光滑表面的连续方法，该方法是在预选择的时间段内使具有初始粗糙度的金属带通过电抛光单元的抛光部分内的酸浴进行通过，在金属带处于酸浴期间通过金属带的电流密度为至少0.18安培/平方厘米，由此金属带的粗糙度减小。这种高度光滑的金属带可以用作随后形成超导涂层导体的基底。

6. 发明授权

US07601430B2 Biaxially oriented film on flexible polymeric substrate 失效
标题翻译：柔性聚合物基材上的双轴取向薄膜
公开(公告)号：US07601430B2
公开(公告)日：2009-10-13
申请号：US11345106
申请日：2006-01-31
申请人： Alp T. Finkikoglu , Vladimir Matias
发明人： Alp T. Finkikoglu , Vladimir Matias
IPC分类号： B32B27/00 , B32B27/28 , B32B9/00
CPC分类号： B32B27/00 , H01L31/03926 , Y02E10/50 , Y10T428/269 , Y10T428/31721
摘要： A flexible polymer-based template having a biaxially oriented film grown on the surface of a polymeric substrate. The template having the biaxially oriented film can be used for further epitaxial growth of films of interest for applications such as photovoltaic cells, light emitting diodes, and the like. Methods of forming such a flexible template and providing the polymeric substrate with a biaxially oriented film deposited thereon are also described.
摘要翻译：具有在聚合物基材的表面上生长的双轴取向膜的柔性聚合物基模板。具有双轴取向膜的模板可用于进一步外延生长用于诸如光伏电池，发光二极管等的应用的薄膜。还描述了形成这种柔性模板并且提供聚合物基材上沉积有双轴取向薄膜的方法。

7. 发明授权

US07736438B2 Method and apparatus for depositing a coating on a tape carrier 失效
标题翻译：用于在带载体上沉积涂层的方法和装置
公开(公告)号：US07736438B2
公开(公告)日：2010-06-15
申请号：US11443808
申请日：2006-05-31
申请人： Jonathan Storer , Vladimir Matias
发明人： Jonathan Storer , Vladimir Matias
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/545 , C23C14/0021 , C23C14/0068 , C23C14/562 , C23C16/45517 , H01L39/2432 , H01L39/2435 , H01L39/2448 , H01L39/2487
摘要： A system and method for depositing ceramic materials, such as nitrides and oxides, including high temperature superconducting oxides on a tape substrate. The system includes a tape support assembly that comprises a rotatable drum. The rotatable drum supports at least one tape substrate axially disposed on the surface of the drum during the deposition of metals on the tape and subsequent oxidation to form the ceramic materials. The drum is located within a stator having a slot that is axially aligned with the drum. A space exists between the drum and stator. The space is filled with a predetermined partial pressure of a reactive gas. The drum, stator, and space are heated to a predetermined temperature. To form the ceramic material on the tape substrate, the drum is first rotated to align the tape substrate with the slot, and at least one metal is deposited on the substrate. The drum then continues to rotate, bringing the tape substrate into the space, where the metal deposited on the tape substrate reacts with the reactive gas to form the ceramic material. In one embodiment, the tape support system also includes a pay-out/take-up system that co-rotates with the drum and provides a continuous length of tape substrate.
摘要翻译：一种用于在带基材上沉积诸如氮化物和氧化物（包括高温超导氧化物）的陶瓷材料的系统和方法。该系统包括带支撑组件，其包括可旋转的滚筒。可旋转滚筒在金属沉积在带子上并随后氧化以形成陶瓷材料时，支撑轴向设置在滚筒表面上的至少一个带基片。滚筒位于具有与滚筒轴向对齐的槽的定子内。鼓和定子之间存在一个空间。空间填充有反应气体的预定分压。鼓，定子和空间被加热到预定温度。为了在带基材上形成陶瓷材料，首先旋转滚筒以将带基材与槽对准，并且至少一种金属沉积在基板上。然后滚筒继续旋转，使带基材进入空间，沉积在带基材上的金属与反应气体反应形成陶瓷材料。在一个实施例中，带支撑系统还包括与鼓共旋转并提供连续长度的带基底的放出/收卷系统。

8. 发明申请

US20060115964A1 Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate 失效
公开(公告)号：US20060115964A1
公开(公告)日：2006-06-01
申请号：US11001461
申请日：2004-11-30
申请人： Alp Findikoglu , Quanxi Jia , Paul Arendt , Vladimir Matias , Woong Choi
发明人： Alp Findikoglu , Quanxi Jia , Paul Arendt , Vladimir Matias , Woong Choi
IPC分类号： B32B13/04 , B32B15/04 , H01L21/20
CPC分类号： C30B29/06 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02505 , H01L21/02521 , H01L21/02532 , H01L21/02587 , H01L21/02658
摘要： A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

9. 发明申请

US20120040100A1 SOLUTION DEPOSITION PLANARIZATION METHOD 审中-公开
标题翻译：解决方案沉积方法
公开(公告)号：US20120040100A1
公开(公告)日：2012-02-16
申请号：US13168093
申请日：2011-06-24
申请人： Vladimir Matias , Christopher J. Sheehan , Jon Fredrick Ihlefeld , Paul Gilbert Clem
发明人： Vladimir Matias , Christopher J. Sheehan , Jon Fredrick Ihlefeld , Paul Gilbert Clem
IPC分类号： B05D1/38 , B05D3/02
CPC分类号： H01L39/2461
摘要： A process for planarizing a substrate involves applying a coating of a first solution of yttrium oxide precursor to a rough substrate surface and heating to remove solvent and convert the yttrium oxide precursor to yttrium oxide. This is repeated with the first solution and then with the second solution. A final surface roughness less than 1 nm RMS may be obtained. In addition, a process for preparing a layered structure includes solution deposition planarization of a rough substrate using different concentrations of metal oxide precursor to provide a metal oxide surface having a surface roughness, and then depositing MgO by IBAD (ion beam assisted deposition). A benefit of a better in plane MgO texture was observed for lower molarities, and when two solutions of different concentrations was employed for coating the rough substrate prior to IBAD-MgO.
摘要翻译：用于平坦化衬底的方法包括将钇氧化物前体的第一溶液的涂层施加到粗糙的衬底表面，并加热以除去溶剂并将氧化钇前体转化为氧化钇。用第一个解决方案重复，然后与第二个解决方案重复。可以获得小于1nm RMS的最终表面粗糙度。此外，制备层状结构的方法包括使用不同浓度的金属氧化物前体的粗糙衬底的溶液沉积平坦化，以提供具有表面粗糙度的金属氧化物表面，然后通过IBAD（离子束辅助沉积）沉积MgO。对于较低的摩尔数，观察到更好的平面MgO纹理的益处，并且当使用两种不同浓度的溶液在IBAD-MgO之前涂覆粗糙底物时。

10. 发明申请

US20060275548A1 Method and apparatus for depositing a coating on a tape carrier 失效
标题翻译：用于在带载体上沉积涂层的方法和装置
公开(公告)号：US20060275548A1
公开(公告)日：2006-12-07
申请号：US11443808
申请日：2006-05-31
申请人： Jonathan Storer , Vladimir Matias
发明人： Jonathan Storer , Vladimir Matias
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/545 , C23C14/0021 , C23C14/0068 , C23C14/562 , C23C16/45517 , H01L39/2432 , H01L39/2435 , H01L39/2448 , H01L39/2487
摘要： A system and method for depositing ceramic materials, such as nitrides and oxides, including high temperature superconducting oxides on a tape substrate. The system includes a tape support assembly that comprises a rotatable drum. The rotatable drum supports at least one tape substrate axially disposed on the surface of the drum during the deposition of metals on the tape and subsequent oxidation to form the ceramic materials. The drum is located within a stator having a slot that is axially aligned with the drum. A space exists between the drum and stator. The space is filled with a predetermined partial pressure of a reactive gas. The drum, stator, and space are heated to a predetermined temperature. To form the ceramic material on the tape substrate, the drum is first rotated to align the tape substrate with the slot, and at least one metal is deposited on the substrate. The drum then continues to rotate, bringing the tape substrate into the space, where the metal deposited on the tape substrate reacts with the reactive gas to form the ceramic material. In one embodiment, the tape support system also includes a pay-out/take-up system that co-rotates with the drum and provides a continuous length of tape substrate.
摘要翻译：一种用于在带基材上沉积诸如氮化物和氧化物（包括高温超导氧化物）的陶瓷材料的系统和方法。该系统包括带支撑组件，其包括可旋转的滚筒。可旋转滚筒在金属沉积在带子上并随后氧化以形成陶瓷材料时，支撑轴向设置在滚筒表面上的至少一个带基片。滚筒位于具有与滚筒轴向对齐的槽的定子内。鼓和定子之间存在一个空间。空间填充有反应气体的预定分压。鼓，定子和空间被加热到预定温度。为了在带基材上形成陶瓷材料，首先旋转滚筒以将带基材与槽对准，并且至少一种金属沉积在基板上。然后滚筒继续旋转，使带基材进入空间，沉积在带基材上的金属与反应气体反应形成陶瓷材料。在一个实施例中，带支撑系统还包括与鼓共旋转并提供连续长度的带基底的放出/收卷系统。

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