专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4281057A Variable pre-spin drying time control of photoresists thickness 失效
标题翻译：可变预旋转干燥时间控制光刻胶厚度
公开(公告)号：US4281057A
公开(公告)日：1981-07-28
申请号：US766308
申请日：1977-02-07
申请人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F7/16 , G03C5/00 , G03C1/76 , G03C1/86 , G03C1/94
CPC分类号： G03F7/162 , Y10S430/136
摘要： Resist is applied to a surface with a syringe, or other suitable dropper, equipped with a millipore filter to remove contaminants. The surface is completely flooded with resist. Resist is allowed to remain on the surface of the evaporated metal for a period of time prior to spin coating. Allowing resist to remain on the surface prior to coating produces a uniform film. For a 2 micron thick uniform resist coating, a minimum of 15 seconds is allowed prior to spinning while in the case of a 4 micron thick resist coating a much longer period is allowed.For the application of a 2 micron film, the resist material after partial drying for approximately 15 seconds is spun at 2000 rpm for 30 seconds. In order to apply a 5 micron thick resist film, resist is spun at 2000 rpm for 30 seconds after partial drying for approximately 10 minutes.
摘要翻译：用注射器或其他合适的滴管将抗蚀剂施加到表面上，该滴管配备有微孔过滤器以除去污染物。表面完全充斥着抗蚀剂。在旋转涂布之前，允许抗蚀剂在蒸发的金属的表面上保留一段时间。允许抗蚀剂在涂覆之前保留在表面上产生均匀的膜。对于2微米厚的均匀抗蚀剂涂层，在纺丝之前允许至少15秒，而在4微米厚的抗蚀剂涂层的情况下允许更长的时间。为了施加2微米的膜，将部分干燥约15秒的抗蚀剂材料在2000rpm下旋转30秒。为了施加5微米厚的抗蚀剂膜，将抗蚀剂在部分干燥约10分钟后以2000rpm旋转30秒。

2. 发明授权

US4022927A Methods for forming thick self-supporting masks 失效
标题翻译：形成厚自支撑面罩的方法
公开(公告)号：US4022927A
公开(公告)日：1977-05-10
申请号：US592001
申请日：1975-06-30
申请人： Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F1/20 , H01L21/027 , B05D3/06
CPC分类号： G03F1/20 , Y10S430/143 , Y10S430/153 , Y10S430/167 , Y10S430/168
摘要： A method of constructing a relatively thick, self-supporting mask suitable for electron beam projection processes. Thickness is achieved by multiple steps of coating with resist, exposure and development. Either positive or negative resist may be used for second and subsequent coatings. Second and subsequent exposures are directed through the first relatively thin mask formed and through the substrate to eliminate critical alignment of subsequent masks. When desired thickness is achieved an even thicker frame may be fabricated for support purposes and the mask may then be lifted off the substrate on which it had rested during the fabrication steps.When positive resist is employed, the resist remaining after development is baked on to give added structural strength to the mask. This baked resist can be coated with an additional layer of metal by evaporation or sputtering to give greater mechanical strength. When negative resist is employed, the portions of the resist protected by the relatively thin previously formed mask are removed and additional material is plated to increase the thickness and strength of the mask. The unprotected resist material is then also removed. The completed mask can be further strengthened by evaporating or sputtering an additional layer of metal or oxide.
摘要翻译：一种构造适合于电子束投影工艺的相对厚的自支撑掩模的方法。厚度通过涂覆抗蚀剂，曝光和显影的多个步骤实现。正或负的抗蚀剂可以用于第二和随后的涂层。第二次和随后的曝光通过形成的第一相对较薄的掩模并穿过基底，以消除随后的掩模的临界对准。当实现期望的厚度时，可以制造更厚的框架用于支撑目的，并且然后可以在制造步骤期间将掩模从衬底上提升出来。

3. 发明授权

US4315985A Fine-line circuit fabrication and photoresist application therefor 失效
标题翻译：细线电路制造及其光刻胶应用
公开(公告)号：US4315985A
公开(公告)日：1982-02-16
申请号：US865344
申请日：1977-12-28
申请人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F7/16 , G11B5/31 , H01L21/00 , H01L21/288 , H01L23/522 , H05K3/10 , H05K3/38 , G03C5/00 , G03C1/76
CPC分类号： H05K3/108 , G03F7/162 , G11B5/3163 , H01L21/00 , H01L21/288 , H01L23/522 , H01L2924/0002 , H01L2924/09701 , H05K2203/0759 , H05K3/388 , Y10S430/136
摘要： A method is disclosed for the production of thick and smooth layers of photoresist on the order of 2-15 microns thick. The substrate is flooded with resist as in the standard spin resist method, but instead of following the flooding step with spinning as usual, the second step is to provide a drying time for the flooded resist. Then at the end of the measured drying time, the resist is spun as usual. This can be used to produce fine line closely spaced circuitry in which the thickness of the lines in proportion to their width, or their aspect ratio, is large. Aspect ratios greater than 0.4 and as high as 1.5 are contemplated by the invention.
摘要翻译：公开了用于生产厚度为2-15微米厚的光致抗蚀剂厚的光滑层的方法。如标准自旋抗蚀剂方法那样，衬底上充满抗蚀剂，但不像以往那样按照旋转进行浸渍步骤，所以第二步是为浸渍抗蚀剂提供干燥时间。然后在测量的干燥时间结束时，抗蚀剂照常旋转。这可以用于产生细线紧密间隔的电路，其中线的厚度与它们的宽度或它们的纵横比成比例大。本发明考虑了大于0.4且高达1.5的长宽比。

4. 发明授权

US4080267A Method for forming thick self-supporting masks 失效
标题翻译：用于形成厚自支撑面罩的方法
公开(公告)号：US4080267A
公开(公告)日：1978-03-21
申请号：US645108
申请日：1975-12-29
申请人： Eugene E. Castellani , Patrick M. McCaffrey , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Eugene E. Castellani , Patrick M. McCaffrey , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F7/038 , G03F1/20 , G03F7/004 , H01L21/027 , C25D5/02 , C25D1/08 , C25D1/20
CPC分类号： G03F1/20
摘要： A method of constructing a relatively thick, self-supporting mask suitable for electron beam projection processes. Thickness is achieved by multiple steps of coating with resist, exposure, development and plating. First an intermediate or lift off layer is deposited on a substrate. A plating or a cathode layer may then be deposited. Resist is then applied. A first mask layer comprises metal plated in accordance with the first pattern. For the second exposure a geometrically similar pattern is employed to generate larger apertures. Thus, if the first mask layer has 0.20 mil apertures, the second layer might have corresponding 0.21 mil to 0.22 mil apertures. For initial mask patterns of about 2 mil the second layer might be 2.02 mils. If desired, a third exposure can be employed with a third pattern, similar to the first two, but having larger apertures (by 0.02 to 0.03 mils) than the second pattern.
摘要翻译：一种构造适合于电子束投影工艺的相对厚的自支撑掩模的方法。厚度通过涂覆抗蚀剂，曝光，显影和电镀的多个步骤来实现。首先将中间层或剥离层沉积在基底上。然后可以沉积电镀或阴极层。然后施加抗蚀剂。第一掩模层包括根据第一图案电镀的金属。对于第二次曝光，采用几何相似的图案来产生较大的孔。因此，如果第一掩模层具有0.20密耳的孔，则第二层可具有相应的0.21密耳至0.22密耳孔。对于约2密耳的初始掩模图案，第二层可以是2.02密耳。如果需要，可以采用类似于前两个第三图案的第三曝光，但是具有比第二图案更大的孔（0.02至0.03密耳）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式