专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5388577A Electrode array microchip 失效
标题翻译：电极阵列微芯片
公开(公告)号：US5388577A
公开(公告)日：1995-02-14
申请号：US57692
申请日：1993-05-04
申请人： Allyn E. Hubbard
发明人： Allyn E. Hubbard
IPC分类号： G01N33/487 , H01L23/485 , H01L23/48 , A61B5/04
CPC分类号： H01L24/10 , G01N33/4836 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/14
摘要： An electrode array microchip, fabricated preferrably using CMOS technology, comprising electrodes made with overglass cuts over metal2 regions is disclosed. Overglass cuts of dimensions approximately an order of magnitude smaller than dimensions quoted in current design rules for CMOS technology are successfully employed to make exposed electrodes of dimensions on the order of microns. Thus, the electrode array chip can be produced cheaply on commercial fabrication lines. The invention finds many uses in biology and medicine, particularly when applied to the measurement of neural electrical activity.
摘要翻译：公开了一种电极阵列微芯片，其优选地使用CMOS技术，包括由金属2区域上的超玻璃切割制成的电极。成功地采用尺寸大小小于CMOS技术的当前设计规则中引用的尺寸数量级的玻璃切割，以制造尺寸为微米级的暴露电极。因此，可以在商业制造线上廉价地制造电极阵列芯片。本发明在生物学和医学中发现许多用途，特别是当应用于神经电活动的测量时。

2. 发明授权

US5227659A Integrated circuit inductor 失效
标题翻译：集成电路电感
公开(公告)号：US5227659A
公开(公告)日：1993-07-13
申请号：US815834
申请日：1991-12-27
申请人： Allyn E. Hubbard
发明人： Allyn E. Hubbard
IPC分类号： H01L27/08
CPC分类号： H01L27/08
摘要： An integrated circuit inductor is disclosed which can be fabricated by adding simple follow-on steps to standard fabrication line processes. In a preferred embodiment, standard CMOS technology is used to fabricate a multi-turn coil having its axis normal to the layers of oxide, polysilicon, and metal which form the coil. For a coil 100 microns on a side, an inductance on the order of 10 nH can be achieved. By including a magnetic core in the design using the disclosed procedure, this value can be increased to as high as 0.1 mH. Thus, inductor values ranging from 0.001 mH-0.1 mH can be physically implemented as integrated, highly-miniaturized CMOS designs for analog operation in the range of approximately 1-100 MHz.
摘要翻译：公开了一种集成电路电感器，其可以通过向标准制造线工艺添加简单的后续步骤来制造。在优选实施例中，使用标准CMOS技术来制造具有垂直于形成线圈的氧化物层，多晶硅层和金属层的多匝线圈。对于一侧为100微米的线圈，可以实现10 nH级的电感。通过使用所公开的程序在设计中包括磁芯，该值可以增加到高达0.1mH。因此，范围从0.001 mH-0.1 mH的电感值可以物理地实现为集成的高度小型化CMOS设计，用于大约1-100 MHz范围内的模拟操作。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式